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    A METHOD FOR PREPARING A SAMPLE FOR TRANSMISSION ELECTRON MICROSCOPY
    2.
    发明公开
    A METHOD FOR PREPARING A SAMPLE FOR TRANSMISSION ELECTRON MICROSCOPY 审中-公开

    公开(公告)号：EP3922752A1

    公开(公告)日：2021-12-15

    申请号：EP20179637.2

    申请日：2020-06-12

    申请人： Imec VZW

    发明人： Vancoille, Eric ,  Bosman, Niels ,  Carolan, Patrick

    IPC分类号： C23C16/48 ,  H01J37/305 ,  H01J37/317 ,  G01N1/28

    摘要： A substrate (1) is provided comprising on its surface a patterned area (8) defined by a given topography. The substrate is to be processed for obtaining a TEM sample (4) in the form of a slice of the substrate . According to the method of the invention, a conformal layer (7) of contrasting material is deposited on the topography, by depositing a layer (5) of the contrasting material on a local target area (6) of the substrate, spaced apart from the patterned area (8). The material is deposited by Electron Beam Induced Deposition (EBID). The deposition parameters, the thickness of the layer (5) deposited in the target area (6), and the distance of said target area to the patterned area, are such that a conformal layer (7) of the contrasting material is formed on the topography of the patterned area (8). This is followed by the deposition of the protective layer (10), which does not damage the topography in the patterned area (8), as it is protected by the conformal layer (7). The TEM sample (4) is prepared in a manner known in the prior art, for example by FIB. The conformal contrasting layer (7) provides a good contrast with the protective layer, thereby allowing a high quality TEM analysis.

    EPITAXIAL GROWTH APPARATUS
    8.
    发明授权
    EPITAXIAL GROWTH APPARATUS 有权

    公开(公告)号：EP2913844B1

    公开(公告)日：2018-09-26

    申请号：EP13848894.5

    申请日：2013-10-28

    申请人： Applied Materials, Inc.

    发明人： OKABE, Akira ,  MORI, Yoshinobu

    IPC分类号： C23C16/455 ,  C30B25/14 ,  C23C16/48 ,  C23C16/458 ,  C30B29/06

    CPC分类号： C23C16/46 ,  C23C16/45502 ,  C23C16/4585 ,  C23C16/481 ,  C30B25/14 ,  C30B29/06

    摘要： An epitaxial growth apparatus is provided having an improved growing speed. This epitaxial growth apparatus is provided with: a reaction chamber that is demarcated by means of a substrate placing section having a substrate placed thereon, a ceiling plate having light permeability, and sidewall sections; a heating means, which is disposed outside of the reaction chamber, and which heats the substrate through the ceiling plate, said substrate being placed in the reaction chamber; and a reaction gas introducing means, which introduces into the reaction chamber a reaction gas in parallel to the horizontal direction of the substrate. The distance between the center of the ceiling plate and the substrate placing section is less than 10 mm.

    SYSTEM AND METHOD FOR GAS PHASE DEPOSITION
    9.
    发明授权
    SYSTEM AND METHOD FOR GAS PHASE DEPOSITION 有权

    公开(公告)号：EP3184666B1

    公开(公告)日：2018-06-13

    申请号：EP15202296.8

    申请日：2015-12-23

    申请人： Singulus Technologies AG

    发明人： IVANOV, Alexey ,  RICHTER, Johannes

    IPC分类号： C23C16/46 ,  C23C16/48

    CPC分类号： C23C16/46 ,  C23C16/48

    摘要： System and method for gas phase deposition of at least one material to a substrate having a first and a second surface opposite to the first surface. The system comprises a holding member configured to hold the substrate, a deposition member configured to apply the at least one material to the substrate from at least one direction and a heater located at a distance from the substrate and being configured to apply heat to the substrate from the side of the first surface and from the side of the second surface of the substrate.

    A CHEMICAL VAPOUR DEPOSITION APPARATUS AND USE THEREOF
    10.
    发明公开
    A CHEMICAL VAPOUR DEPOSITION APPARATUS AND USE THEREOF 审中-公开
    化学气相沉积设备及其用途

    公开(公告)号：EP3301204A1

    公开(公告)日：2018-04-04

    申请号：EP17194135.4

    申请日：2017-09-29

    申请人： Tempress IP B.V.

    发明人： Harris, Malcolm John ,  Venema, Peter Roelf ,  Renes, Marten Ronald ,  Luchies, Johannes Reinder Marc

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52

    CPC分类号： C23C16/4587 ,  C23C16/46 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67313

    摘要： The plasma-enhanced chemical vapour deposition (PECVD) apparatus comprises a tubular chamber (100) configured for a wafer boat (10) with substrates. The PECVD apparatus further comprises heating means (110) arranged at an outside of the chamber and configured for emitting heat by means of radiation, and a controller for controlling a state inside the chamber (100), including temperature and composition. Herein, the heating means (110) are configured for the provision of radiation according to a radially varying profile within the chamber, which radial heating profile comprises a first radial zone (I) and a second radial zone (II), and wherein a heat flux (F I ) in the first radial zone (I) is higher than the heat flux (F II ) in the second radial zone.

    摘要翻译： 等离子体增强化学气相沉积（PECVD）装置包括配置用于具有基板的晶舟（10）的管状室（100）。 PECVD设备还包括布置在腔室外部并被配置用于通过辐射发射热量的加热装置（110），以及用于控制腔室（100）内部状态的控制器，包括温度和成分。 这里，加热装置（110）被配置为根据腔室内的径向变化轮廓提供辐射，该径向加热轮廓包括第一径向区域（I）和第二径向区域（II），并且其中热量 第一径向区域（I）中的通量（FI）高于第二径向区域中的热通量（FII）。