公开(公告)号：EP4435838A1

公开(公告)日：2024-09-25

申请号：EP24160470.1

申请日：2024-02-29

申请人： Kokusai Electric Corp.

发明人： NAKANISHI, Kento ,  YAMAGUCHI, Hideto

IPC分类号： H01L21/67 ,  H01L21/673

CPC分类号： H01L21/67248 ,  H01L21/67115 ,  H01L21/67109 ,  H01L21/67303

摘要： There is provided a technique that includes: a heater (40) arranged in each of a plurality of zones (U, CU, C, CL, L); at least one first temperature sensor (211) configured to be capable of operating in conjunction with at least one substrate (1); another temperature sensor aside from the at least one first temperature sensor (211); and a controller (200) configured to be capable of controlling the heater (40) based on a temperature detected by either the at least one first temperature sensor (211) or the another temperature sensor, wherein the either the at least one first temperature sensor (211) or the another temperature sensor is assigned to each of the plurality of zones (U, CU, C, CL, L).

公开(公告)号：EP4386823A1

公开(公告)日：2024-06-19

申请号：EP22212687.2

申请日：2022-12-12

申请人： Comptek Solutions OY

发明人： MÄKELÄ, Jaakko ,  LåNG, Jouko ,  CALVO Alonso, Vicente

IPC分类号： H01L21/677 ,  H01S5/028

CPC分类号： H01S5/0282 ,  H01S5/028 ,  H01L21/67748 ,  H01L21/67742 ,  H01L21/6719 ,  H01L21/67115 ,  H01L21/67207

摘要： Disclosed is a method (100) and a system (200) of passivating a cleaved semiconductor structure (202) for utilization as an edge-emitting laser device. The method (100) comprises providing an enclosure (204) having a first chamber (206) and a second chamber (208), a transfer arm (224) to receive and transfer a given structure (202), and a fixture (226) to mount the given structure thereon in the second chamber. The method (100) further comprises loading the cleaved semiconductor structure defining a first facet (202A), in the first chamber, onto the transfer arm therein, transferring the cleaved semiconductor structure using the transfer arm, exposing the first facet (202A) of the cleaved semiconductor structure to a cleaning beam from a cleaning source (214), and exposing the first facet of the cleaved semiconductor to an oxidation agent from an oxidizing source (218) to form an ordered oxide layer (236) on the first facet of the cleaved semiconductor structure.

公开(公告)号：EP3589428B1

公开(公告)日：2024-05-01

申请号：EP18708974.3

申请日：2018-03-01

IPC分类号： B08B3/10 ,  B08B7/00 ,  G03F1/82 ,  H01L21/67

CPC分类号： B08B3/10 ,  B08B7/0057 ,  G03F1/82 ,  H01L21/67051 ,  H01L21/67115

公开(公告)号：EP4150663B1

公开(公告)日：2024-04-24

申请号：EP21731892.2

申请日：2021-05-07

IPC分类号： H01L21/67 ,  H01L21/673

CPC分类号： H01L21/67313 ,  H01L21/67115 ,  H01L21/67011 ,  H01L21/67326 ,  H01J37/32715

公开(公告)号：EP3440695A1

公开(公告)日：2019-02-13

申请号：EP17715696.5

申请日：2017-04-04

申请人： EV Group E. Thallner GmbH

发明人： FEHKÜHRER, Andreas

IPC分类号： H01L21/683 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01L21/6835 ,  C09J5/06 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/67132 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834

公开(公告)号：EP3365913A1

公开(公告)日：2018-08-29

申请号：EP16790781.5

申请日：2016-10-12

申请人： Watlow Electric Manufacturing Company

发明人： ZHANG, Sanhong ,  PTASIENSKI, Kevin ,  SMITH, Kevin, R.

IPC分类号： H01L21/67

CPC分类号： H05B1/0233 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H05B3/267

摘要： An apparatus for supporting a substrate in a process chamber and regulating surface temperature of the substrate and method of making the same is provided. The apparatus includes a base support having a surface adapted to support the substrate and a heater for heating the substrate with the heater being disposed proximate the base support. The base support is made of a composite material comprising a plurality of thermally conductive arcuate members embedded within a matrix, each of the plurality thermally conductive arcuate members being arranged concentrically and defining predetermined intervals in a radial direction such that the composite material provides an anisotropic thermal conductivity in radial (ρ), azimuthal (φ) and axial (z) directions in a cylindrical coordinate system of the base support.

公开(公告)号：EP3346337A1

公开(公告)日：2018-07-11

申请号：EP17207286.0

申请日：2017-12-14

申请人： Tokyo Electron Limited

发明人： Nagahara, Seiji ,  Tomono, Masaru ,  Fukunaga, Nobutaka ,  Shiraishi, Gousuke

IPC分类号： G03F7/20 ,  H01L21/67

CPC分类号： G03F7/7055 ,  G03F7/16 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/7005 ,  G03F7/70133 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/67115 ,  H01L21/6715

摘要： A technology capable of easily adjusting an illuminance distribution pattern in the irradiation region in the lengthwise direction to a target illuminance distribution pattern with high accuracy when optical processing is performed on a substrate by forming a strip-shaped irradiation region with a plurality of light-emitting blocks is provided. An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block (42). There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks (42) and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

公开(公告)号：EP3263748A3

公开(公告)日：2018-05-02

申请号：EP17170300.2

申请日：2017-05-09

申请人： Epiluvac AB

发明人： Spengler, Richard ,  Nilsson, Roger ,  Rosberg, Jonas

IPC分类号： C30B25/10 ,  C23C16/46 ,  C23C16/54 ,  C23C16/458 ,  F27B9/06 ,  F27B9/36 ,  F27D11/02 ,  F27D11/06 ,  H01L21/67

CPC分类号： C23C16/46 ,  C23C16/4585 ,  C23C16/545 ,  C30B25/08 ,  C30B25/10 ,  F27B9/063 ,  F27B9/067 ,  F27B9/36 ,  F27D11/02 ,  F27D11/06 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  Y02P10/253

摘要： A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber.

公开(公告)号：EP1902003B1

公开(公告)日：2018-04-25

申请号：EP06787040.2

申请日：2006-07-12

申请人： Applied Materials, Inc.

发明人： BHATNAGAR, Ashish ,  MURUGESH, Laxman ,  GOPALAKRISHNAN, Padma

IPC分类号： H01L21/67 ,  C03B25/02 ,  H01L21/683 ,  B23K26/00 ,  C04B41/00

CPC分类号： C04B41/0036 ,  B23K26/352 ,  C03B25/02 ,  H01L21/67115 ,  H01L21/6831 ,  Y10T428/131

摘要： A substrate processing chamber component has a structural body with localized surface regions having annealed microcracks. The annealed microcracks reduce crack propagation and increase fracture resistance. In one method of manufacture, the structural body of the component is formed, and a laser beam is directed onto localized surface regions of the body for a sufficient time to anneal the surface microcracks.

公开(公告)号：EP3308391A1

公开(公告)日：2018-04-18

申请号：EP16727436.4

申请日：2016-06-01

申请人： Soitec

发明人： BROEKAART, Marcel ,  CAPELLO, Luciana ,  BERTRAND, Isabelle ,  COLOMBET, Norbert

IPC分类号： H01L21/324 ,  H01L21/322 ,  H01L21/762

CPC分类号： H01L21/324 ,  H01L21/2686 ,  H01L21/3226 ,  H01L21/67115 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/84 ,  H01L22/14 ,  H01L29/1079

摘要： A process for the manufacture of a semiconductor element includes a stage of rapid heat treatment of a substrate comprising a charge-trapping layer, which is capable of damaging an RF characteristic of the substrate. The rapid heat treatment stage is followed by a healing heat treatment of the substrate between 700° C. and 1100° C., for a period of time of at least 15 seconds.