-
1.发明公开
公开(公告)号：EP2690664A1
公开(公告)日：2014-01-29
申请号：EP13174783.4
申请日：2013-07-02
发明人： Lee, Chang-seung , Kim, Yong-sung , Lee, Joo-ho , Jung, Yong-seok
IPC分类号： H01L29/49 , H01L29/786
CPC分类号： H01L29/1606 , H01L29/4908 , H01L29/66045 , H01L29/66742 , H01L29/78 , H01L29/78684 , H01L29/78696
摘要： Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.
摘要翻译： 晶体管和制造晶体管的方法包括石墨烯和从石墨烯转化的材料。 晶体管可以包括包括石墨烯的沟道层和包括从石墨烯转换的材料的栅极绝缘层。 从石墨烯转化的材料可以是氟化石墨烯。 沟道层可以包括图案化的石墨烯区域。 图案化的石墨烯区域可以由从石墨烯转换的区域限定。 晶体管的栅极可以包括石墨烯。
-
公开(公告)号：EP2620981A3
公开(公告)日：2015-05-13
申请号：EP13150091.0
申请日：2013-01-03
IPC分类号： H01L29/778 , H01L29/16 , H01L21/683 , H01L29/78 , H01L29/417 , H01L29/423
CPC分类号： H01L29/1606 , H01L21/6835 , H01L29/41758 , H01L29/41775 , H01L29/42384 , H01L29/66787 , H01L29/778 , H01L29/7831 , H01L2221/6835 , H01L2221/68363 , H01L2221/68381
摘要： Transistors and methods of manufacturing the same may include a gate (G1) on a substrate, a graphene channel layer (C1) having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode (S1) contacting a first region of the channel layer, and a drain electrode (D1) contacting a second region of the channel layer.
-
公开(公告)号：EP2343725B1
公开(公告)日：2016-11-09
申请号：EP10181822.7
申请日：2010-09-29
发明人： Baik, Chan-wook , Lee, Joo-ho , Son, Hyung-bin
-
公开(公告)号：EP2690664B1
公开(公告)日：2015-09-16
申请号：EP13174783.4
申请日：2013-07-02
发明人： Lee, Chang-seung , Kim, Yong-sung , Lee, Joo-ho , Jung, Yong-seok
IPC分类号： H01L29/66 , H01L29/16 , H01L29/786 , H01L29/49
CPC分类号： H01L29/1606 , H01L29/4908 , H01L29/66045 , H01L29/66742 , H01L29/78 , H01L29/78684 , H01L29/78696
-
5.发明公开
公开(公告)号：EP2620981A2
公开(公告)日：2013-07-31
申请号：EP13150091.0
申请日：2013-01-03
IPC分类号： H01L29/778 , H01L29/16 , H01L29/78 , H01L29/417 , H01L29/423
CPC分类号： H01L29/1606 , H01L21/6835 , H01L29/41758 , H01L29/41775 , H01L29/42384 , H01L29/66787 , H01L29/778 , H01L29/7831 , H01L2221/6835 , H01L2221/68363 , H01L2221/68381
摘要： Transistors and methods of manufacturing the same may include a gate (G1) on a substrate, a graphene channel layer (C1) having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode (S1) contacting a first region of the channel layer, and a drain electrode (D1) contacting a second region of the channel layer.
摘要翻译： 晶体管及其制造方法可以包括在基板上的栅极（G1），具有覆盖至少一部分栅极的三维（3D）沟道区域的石墨烯沟道层（C1），源电极（S1） 接触沟道层的第一区域，以及与沟道层的第二区域接触的漏电极（D1）。
-
6.发明公开Terahertz radiation sources and methods of manufacturing the same 有权Terahertz-Strahlungsquelle und Herstellungsverfahrendafür
公开(公告)号：EP2343725A1
公开(公告)日：2011-07-13
申请号：EP10181822.7
申请日：2010-09-29
发明人： Baik, Chan-wook , Lee, Joo-ho , Son, Hyung-bin
摘要： A terahertz radiation source includes: a cathode configured to emit an electron beam, an anode configured to focus the electron beam emitted from the cathode; a collector facing the cathode and configured to collect the emitted electron beam focused by the anode; an oscillating circuit positioned between the anode and the collector and configured to convert energy of a passing electron beam into electromagnetic wave energy; and an output unit connected to the oscillating circuit and configured to externally emit the electromagnetic wave energy.
摘要翻译： 太赫兹辐射源包括：被配置为发射电子束的阴极，被配置为聚焦从阴极发射的电子束的阳极; 面对阴极并且被配置为收集由阳极聚焦的发射电子束的集电体; 位于所述阳极和所述集电极之间并被配置为将通过的电子束的能量转换成电磁波能量的振荡电路; 以及连接到所述振荡电路并被配置为从外部发射所述电磁波能量的输出单元。
-
公开(公告)号：EP2620982B1
公开(公告)日：2019-04-03
申请号：EP13150824.4
申请日：2013-01-10
IPC分类号： H01L29/778 , H01L29/16 , H01L29/417 , H01L21/683
-
公开(公告)号：EP2752880A3
公开(公告)日：2017-10-18
申请号：EP14150063.7
申请日：2014-01-02
发明人： Kim, Yong-sung , Lee, Chang-seung , Lee, Joo-ho
IPC分类号： H01L29/778 , H01L21/336 , H01L29/78 , H01L29/788 , H01L29/16 , H01L21/28 , H01L29/423 , H01L27/115 , H01L29/417 , H01L21/683
CPC分类号： H01L29/66477 , B82Y10/00 , H01L21/28273 , H01L21/28291 , H01L21/6835 , H01L27/11521 , H01L27/1159 , H01L29/1606 , H01L29/41775 , H01L29/42328 , H01L29/66045 , H01L29/778 , H01L29/78391 , H01L29/7881 , H01L2221/68359 , H01L2221/68381
摘要： A graphene electronic device includes: a first conductive layer (12) and a semiconductor layer (13) on a first region of an intermediate layer (11); a second conductive layer (14) on a second region of the intermediate layer; a graphene layer (15) on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure (17) and a second gate structure (18) on the graphene layer.
摘要翻译： 一种石墨烯电子器件，包括：中间层（11）的第一区域上的第一导电层（12）和半导体层（13）;第二导电层 在中间层的第二区域上的第二导电层（14） 所述中间层，所述半导体层和所述第二导电层上的石墨烯层（15） 以及石墨烯层上的第一栅极结构（17）和第二栅极结构（18）。
-
公开(公告)号：EP2620982A3
公开(公告)日：2015-05-13
申请号：EP13150824.4
申请日：2013-01-10
IPC分类号： H01L29/778 , H01L29/16 , H01L29/417 , H01L21/683
CPC分类号： H01L29/778 , H01L21/6835 , H01L29/1606 , H01L29/41775 , H01L2221/68327 , H01L2221/6835 , H01L2221/68368 , Y10S977/734
摘要： A method of manufacturing a graphene device may include forming a device portion including a graphene layer (GP1) on the first substrate (SUB1); attaching a second substrate (SUB2) on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.
-
10.发明公开Graphene electronic devices and methods of manufacturing the same 审中-公开Graphenelektronikvorrichtungen und Verfahren zur Herstellung davon
公开(公告)号：EP2752880A2
公开(公告)日：2014-07-09
申请号：EP14150063.7
申请日：2014-01-02
发明人： Kim, Yong-sung , Lee, Chang-seung , Lee, Joo-ho
IPC分类号： H01L29/778 , H01L21/336 , H01L29/78 , H01L29/788 , H01L29/16 , H01L21/28 , H01L29/423 , H01L27/115
CPC分类号： H01L29/66477 , B82Y10/00 , H01L21/28273 , H01L21/28291 , H01L21/6835 , H01L27/11521 , H01L27/1159 , H01L29/1606 , H01L29/41775 , H01L29/42328 , H01L29/66045 , H01L29/778 , H01L29/78391 , H01L29/7881 , H01L2221/68359 , H01L2221/68381
摘要： A graphene electronic device includes: a first conductive layer (12) and a semiconductor layer (13) on a first region of an intermediate layer (11); a second conductive layer (14) on a second region of the intermediate layer; a graphene layer (15) on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure (17) and a second gate structure (18) on the graphene layer.
摘要翻译： 石墨烯电子器件包括：在中间层（11）的第一区域上的第一导电层（12）和半导体层（13）; 在所述中间层的第二区域上的第二导电层（14）; 中间层上的石墨烯层（15），半导体层和第二导电层; 以及石墨烯层上的第一栅极结构（17）和第二栅极结构（18）。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.014 秒)
