摘要:
A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
摘要:
A layered structure having a first layer including a polymerization product of a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end, wherein the first monomer includes a first thiol compound represented by Chemical Formula 1-1 including a thioglycolate moiety and a second thiol represented by Chemical Formula 1-2, and wherein the second monomer includes an ene compound represented by Chemical Formula 2:
wherein in Chemical Formulae 1-1, 1-2, and 2, groups and variables are the same as described in the specification.
摘要:
A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.
摘要:
A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
摘要:
A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.
摘要:
An electronic device (100) includes a first electrode (10) and a second electrode (20) facing each other, an emission layer (30) comprising a plurality of quantum dots (3), wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer (40) disposed between the first electrode and the emission layer; and an optical functional layer (60) disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode (12), wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer (60) is greater than or equal to a refractive index of the second electrode (20).
摘要:
Light conversion device, manufacturing method thereof, light source module including light conversion device and backlight unit including the same are provided. A light conversion device includes a frame (110) through which incident light is received from a light source and converted light is emitted from the light conversion device, the frame including: an opening (111) through which light of a first color is received from the light source and from which light of a second color is emitted from the light conversion device, and a wall (112) which surrounds the opening, a substrate (120) in the opening and supported by the wall, a light conversion layer (130) which is disposed on the substrate and receives the light of the first color from the light source, the light conversion layer including a light converting particle which converts the light of the first color to the light of the second color, a first inorganic layer (140) disposed on the light conversion layer, and a first organic layer (150) disposed on the first inorganic layer.