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公开(公告)号：EP3876281A1
公开(公告)日：2021-09-08
申请号：EP19878906.7
申请日：2019-11-01
摘要： Provided is a light emitting element. The light emitting device comprises: a first light emitting unit having a first area; a second light emitting unit having a second area; and a third light emitting unit having a third area, wherein the first light emitting unit is coplanar with the second light emitting unit, and the third light emitting unit is disposed over the first and second light emitting units, and the third area is larger than each of the first and second areas.
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公开(公告)号：EP3852154A1
公开(公告)日：2021-07-21
申请号：EP19860392.0
申请日：2019-09-10
发明人： JANG, Seong Kyu , LEE, Ho Joon , CHAE, Jong Hyeon
摘要： A light emitting device is provided. The light emitting device includes a first light emitting part including a first ohmic layer, a second light emitting part and including a second ohmic layer, a third light emitting part including first and second metal patterns respectively contacting semiconductor layers thereof, a first pad electrically coupled with the first ohmic layer, a second pad electrically coupled with the second ohmic layer, a third pad electrically coupled with the first metal pattern, a common pad electrically coupled with a semiconductor layer of the first and second light emitting parts and the second metal pattern, and a via structure electrically coupling the second metal pattern and the common pad between the second metal pattern and the common pad, in which the second metal pattern has a first portion contacting the first via structure and a second portion contacting the semiconductor layer of the third light emitting part.
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3.发明公开
公开(公告)号：EP3709364A1
公开(公告)日：2020-09-16
申请号：EP17931562.7
申请日：2017-11-08
发明人： LEE, Chung Hoon , CHAE, Jong Hyeon
摘要： A light-emitting diode unit for a display, according to one embodiment, comprises a plurality of pixels, each pixel including: a first light-emitting cell, a second light-emitting cell, and a third light-emitting cell respectively including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; pads electrically connected to the first through third light-emitting cells so as to independently drive the first through third light-emitting cells; a second wavelength converter for converting a wavelength of light emitted from the second light-emitting cell; and a third wavelength converter for converting a wavelength of light emitted from the third light-emitting cell, wherein the third wavelength converter converts a wavelength of light to a longer wavelength than the second wavelength converter, the second light-emitting cell has a larger area than the first light-emitting cell, and the third light-emitting cell has a larger area than the second light-emitting cell. It is possible to easily mount the light-emitting cells on the circuit board by using the light-emitting diode unit for a display, comprising the plurality of pixels.
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公开(公告)号：EP2757598A2
公开(公告)日：2014-07-23
申请号：EP12832213.8
申请日：2012-09-14
发明人： CHAE, Jong Hyeon , JANG, Jong Min , ROH, Won Young , SUH, Dae Woong , CHO, Dae Sung , LEE, Joon Sup , LEE, Kyu Ho , IN, Chi Hyun
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.
摘要翻译： 本发明涉及一种发光二极管及其制造方法。 发光二极管包括：第一导电半导体层; 在所述第一导电半导体层上彼此间隔开设置的多个台面，每个台面包括有源层和第二导电半导体层; 反射电极分别设置在多个台面上并与第二导电半导体层欧姆接触; 覆盖多个台面和第一导电半导体层的开口与台面电绝缘，并将反射电极暴露于每个台面的上部区域; 以及与第一导电半导体层欧姆接触的电流扩散层。 因此，可以提供改善电流扩展性能的发光二极管。
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公开(公告)号：EP4020552A1
公开(公告)日：2022-06-29
申请号：EP20855589.6
申请日：2020-07-31
摘要： A light-emitting element for a display according to an embodiment comprises: a first LED stack for generating light having a first peak wavelength; a second LED stack disposed below the first LED stack and generating light having a second peak wavelength; a third LED stack disposed below the second LED stack and generating light having a third peak wavelength; and a floating reflective layer disposed above the first LED stack and reflecting the light having the first peak wavelength, wherein the first peak wavelength is a longer wavelength than the second and third peak wavelengths.
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公开(公告)号：EP3913668A1
公开(公告)日：2021-11-24
申请号：EP21182972.6
申请日：2018-11-27
IPC分类号： H01L25/075 , H01L33/38 , H01L33/40 , H01L33/00
摘要： A light emitting diode (LED) stack for a display includes a first LED sub-unit having a first surface and a second surface, a second LED sub-unit disposed on the first surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a reflective electrode disposed on the second side of the second LED sub-unit and forming ohmic contact with the first LED sub-unit, and an ohmic electrode interposed between the first LED sub-unit and the second LED sub-unit and forming ohmic contact with the first LED sub-unit, in which the second LED sub-unit and the third LED sub-unit are configured to transmit light generated from the first LED sub-unit, and the third LED sub-unit is configured to transmit light generated from the second LED sub-unit.
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公开(公告)号：EP3729518A1
公开(公告)日：2020-10-28
申请号：EP18890359.5
申请日：2018-12-21
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公开(公告)号：EP3223320A1
公开(公告)日：2017-09-27
申请号：EP17165501.2
申请日：2012-09-14
发明人： CHAE, Jong Hyeon , JANG, Jong Min , ROH, Won Young , SUH, Dae Woong , CHO, Dae Sung , LEE, Joon Sup , LEE, Kyu Ho , IN, Chi Hyun
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.
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公开(公告)号：EP4060753A1
公开(公告)日：2022-09-21
申请号：EP20887672.2
申请日：2020-11-13
IPC分类号： H01L33/38 , H01L33/08 , H01L33/42 , H01L25/075 , H01L27/12
摘要： A light-emitting device for display according to an embodiment comprises: a first LED stack; a second LED stack located under the first LED stack; a third LED stack located under the second LED stack; a first bonding layer interposed between the second LED stack and the third LED stack; a second bonding layer interposed between the first LED stack and the second LED stack; a first planarization layer interposed between the second bonding layer and the second LED stack; a second planarization layer arranged on the first LED stack; first lower buried vias which are electrically connected respectively to a first conductive-type semiconductor layer and a second conductive-type semiconductor layer in the third LED stack after penetrating through the first planarization layer, the second LED stack, and the first bonding layer; and upper buried vias penetrating through the second planarization layer and the first LED stack, wherein widths of upper ends of the first lower buried vias and the upper buried vias are greater than widths of corresponding through-holes.
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公开(公告)号：EP4012765A1
公开(公告)日：2022-06-15
申请号：EP20849057.3
申请日：2020-08-04
IPC分类号： H01L25/075 , H01L33/08 , H01L33/38 , H01L23/522 , H01L33/10 , H01L33/42 , H01L23/485
摘要： A display panel according to an embodiment of the present disclosure comprises: a circuit board having pads on the upper surface thereof; and a plurality of pixel regions arranged on the circuit board, wherein each of the pixel regions comprises: a first LED stack disposed on the circuit board; a first bonding layer disposed between the first LED stack and the circuit board; a second LED stack disposed on the first LED stack; a third LED stack disposed on the second LED stack; first through-vias extending through the first LED stack and the first bonding layer; second through-vias extending through the second LED stack; and third through-vias extending through the third LED stack, and the first through-vias extend through the first LED stack and the first bonding layer, and are connected to the pads on the circuit board.
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