公开(公告)号：EP1892742A1

公开(公告)日：2008-02-27

申请号：EP06766924.2

申请日：2006-06-19

申请人： Sumitomo Electric Industries, Ltd.

发明人： YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd. ,  UEDA, Akihiko, Sumitomo ElectricIndustries, Ltd. ,  NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., Ltd ,  IMAI, Takahiro, Sumitomo Electric Industries, Ltd.

IPC分类号： H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2 × 10 15 cm -3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 µm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

摘要翻译： 本发明的一个目的是提供一种使用金刚石并具有高亮度和小能量宽度的电子发射阴极和电子发射源，它们适用于电子束和电子束器件以及真空管，特别是电子显微镜和 电子束曝光装置，以及使用这种阴极和源的电子装置。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石。 金刚石电子发射阴极具有尖锐尖锐部分和加热部分的圆柱形状。 一个电子发射部分设置在锋利的锐截面中。 电子发射部分和加热部分包括金刚石半导体。 该金刚石半导体是在2×1015cm-3以上具有p型杂质的p型半导体。 半导体存在于电子发射部分中。 在电子发射阴极的表面上形成金属层。 金属层存在于加热部分的至少一部分中。 从电子发射部分到金属层端部的最短距离为500μm或更小。 用一对电流引入端向加热部分提供用于加热的电流，并且可以从电子发射部分发射一些引入的电子。

公开(公告)号：EP1892742B1

公开(公告)日：2011-10-05

申请号：EP06766924.2

申请日：2006-06-19

申请人： Sumitomo Electric Industries, Ltd.

发明人： YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd. ,  UEDA, Akihiko, Sumitomo ElectricIndustries, Ltd. ,  NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., Ltd ,  IMAI, Takahiro, Sumitomo Electric Industries, Ltd.

IPC分类号： H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2 × 1015 cm-3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.

公开(公告)号：EP1892740B1

公开(公告)日：2011-10-05

申请号：EP06757402.0

申请日：2006-06-19

申请人： Sumitomo Electric Industries, Ltd.

发明人： UEDA, Akihiko, Sumitomo Electric Industries, Ltd. ,  YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd. ,  NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., Ltd ,  IMAI, Takahiro, Sumitomo Electric Industries, Ltd.

IPC分类号： H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode includes a sharpened section and a heating section. The diamond electron emission cathode has a columnar shape having the sharpened section having an electron emission section and is formed by at least two types of semiconductor having different electric characteristics. One of the types constituting the semiconductor is an n-type semiconductor containing 2 × 1015 cm-3 of n-type impurities or above and the other type is a p-type semiconductor containing 2 × 1015 cm-3 of p-type impurities or above. The p-type semiconductor is in contact with the n-type semiconductor. A pair of current introduction terminals directly heats the heating section in parallel to the contact surface and emits a part of the introduced electrons from the electron emission section.

摘要翻译： 通过使用金刚石和使用它们的电子器件，可以提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。 金刚石电子放电阴极至少在其一部分上具有单晶金刚石。 金刚石电子发射阴极包括尖锐部分和加热部分。 金刚石电子发射阴极具有圆柱形状，其尖锐部分具有电子发射部分，并且由具有不同电特性的至少两种类型的半导体形成。 构成半导体的一种类型是含有2×1015cm-3以上的n型杂质的n型半导体，另一种是含有2×1015cm-3的p型杂质的p型半导体或 以上。 p型半导体与n型半导体接触。 一对电流引入端子直接加热加热部分与接触表面平行，并从电子发射部分发射一部分引入的电子。

公开(公告)号：EP1892740A1

公开(公告)日：2008-02-27

申请号：EP06757402.0

申请日：2006-06-19

申请人： Sumitomo Electric Industries, Ltd.

发明人： UEDA, Akihiko, Sumitomo Electric Industries, Ltd. ,  YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd. ,  NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., Ltd ,  IMAI, Takahiro, Sumitomo Electric Industries, Ltd.

IPC分类号： H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2 × 10 15 cm 3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2 × 10 15 cm -3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.

摘要翻译： 目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ，以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的种类之一是含有2×10 15 cm 3以上的n型杂质的n型半导体，另一种是含有2×10 15 cm -3的p型杂质的p型半导体 以上，p型半导体和n型半导体结合在一起，加热部分被平行于接合面激励并被一对电流引入端直接加热，并且一些引入的电子从电子发射 发射部分。