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    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE
    3.
    发明授权
    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE 有权
    金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置

    公开(公告)号：EP1892740B1

    公开(公告)日：2011-10-05

    申请号：EP06757402.0

    申请日：2006-06-19

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： UEDA, Akihiko, Sumitomo Electric Industries, Ltd. ,  YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd. ,  NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., Ltd ,  IMAI, Takahiro, Sumitomo Electric Industries, Ltd.

    IPC分类号： H01J1/15 ,  H01J37/06 ,  H01J37/305

    CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

    摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode includes a sharpened section and a heating section. The diamond electron emission cathode has a columnar shape having the sharpened section having an electron emission section and is formed by at least two types of semiconductor having different electric characteristics. One of the types constituting the semiconductor is an n-type semiconductor containing 2 × 1015 cm-3 of n-type impurities or above and the other type is a p-type semiconductor containing 2 × 1015 cm-3 of p-type impurities or above. The p-type semiconductor is in contact with the n-type semiconductor. A pair of current introduction terminals directly heats the heating section in parallel to the contact surface and emits a part of the introduced electrons from the electron emission section.

    摘要翻译： 通过使用金刚石和使用它们的电子器件，可以提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。 金刚石电子放电阴极至少在其一部分上具有单晶金刚石。 金刚石电子发射阴极包括尖锐部分和加热部分。 金刚石电子发射阴极具有圆柱形状，其尖锐部分具有电子发射部分，并且由具有不同电特性的至少两种类型的半导体形成。 构成半导体的一种类型是含有2×1015cm-3以上的n型杂质的n型半导体，另一种是含有2×1015cm-3的p型杂质的p型半导体或 以上。 p型半导体与n型半导体接触。 一对电流引入端子直接加热加热部分与接触表面平行，并从电子发射部分发射一部分引入的电子。

    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE
    5.
    发明公开
    DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE 有权
    UNG EN EN EN EN UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG

    公开(公告)号：EP1892740A1

    公开(公告)日：2008-02-27

    申请号：EP06757402.0

    申请日：2006-06-19

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： UEDA, Akihiko, Sumitomo Electric Industries, Ltd. ,  YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd. ,  NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., Ltd ,  IMAI, Takahiro, Sumitomo Electric Industries, Ltd.

    IPC分类号： H01J1/15 ,  H01J37/06 ,  H01J37/305

    CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

    摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2 × 10 15 cm 3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2 × 10 15 cm -3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.

    摘要翻译： 目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ，以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的种类之一是含有2×10 15 cm 3以上的n型杂质的n型半导体，另一种是含有2×10 15 cm -3的p型杂质的p型半导体 以上，p型半导体和n型半导体结合在一起，加热部分被平行于接合面激励并被一对电流引入端直接加热，并且一些引入的电子从电子发射 发射部分。

    Bonded article with improved work function uniformity and method for making the same
    8.
    发明公开
    Bonded article with improved work function uniformity and method for making the same 有权
    粘结制品具有改进的放电电位的均匀性及其制造方法

    公开(公告)号：EP1063670A2

    公开(公告)日：2000-12-27

    申请号：EP00305016.8

    申请日：2000-06-13

    申请人： LUCENT TECHNOLOGIES INC.

    发明人： Katsap, Victor ,  Waskiewicz, Waren K.

    IPC分类号： H01J1/15 ,  H01J9/04 ,  H01J37/06

    CPC分类号： H01J1/15 ,  H01J9/04 ,  H01J37/06 ,  H01J2237/3175

    摘要： A bonded article including a single crystal cathode with an improved work function, for use in projection electron beam lithography, such as the SCALPEL™ system. Because of its single crystalline structure, the single crystal cathode has only slightly misoriented grains. As a result, the single crystal cathode has fewer structural non-uniformities than conventional micro-polycrystalline foils, and therefore a more uniform emission characteristic. The single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. A local bonding technique for bonding a single crystal cathode with a conventional member. The local bonding technique does not recrystallize a center of the single crystal cathode, and therefore produces a bonded article which is usable in a projection electron lithography system, such as the SCALPEL™ system. The local bonding technique may be laser welding and the single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. The member may be a conventional filament and the filament may be made of one of tungsten, a tungsten-rhenium alloy, and a tungsten-tantalum alloy.

    摘要翻译： 一种粘结制品，包括含有改进的功函数的单晶阴极，在投影电子束光刻，：如SCALPEL“¢系统中使用，由于其单结晶结构的，单晶阴极仅略微取向错误的晶粒。 其结果是，单晶阴极具有结构的非均匀性比常规的微多晶箔更少，因此更均匀的发射特性。 单晶阴极可以由钽，钨，铼和钼中的至少一种制成。 用于与常规部件贴合的单晶阴极局部接合技术。 该局部粘合技术不再结晶单晶阴极的中心处，并因此产生一个粘结制品所有这些是在投影电子光刻系统中使用，：如SCALPEL“¢系统，该局部粘合技术可以是激光焊接和单 晶体阴极可以由钽，钨，铼和钼中的至少一种制成。 所述构件可以是传统的灯丝与灯丝可以由钨，钨 - 铼合金中的一种，和钨 - 钽合金构成。

    Wire shaped electron source
    10.
    发明公开
    Wire shaped electron source 失效
    线形电子源

    公开(公告)号：EP0470631A3

    公开(公告)日：1992-03-18

    申请号：EP91113376.7

    申请日：1991-08-09

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Nonomura, Kinzo ,  Hashiguchi, Jumpei ,  Murai, Ryuichi ,  Hamada, Kiyoshi ,  Kitao, Satoshi

    IPC分类号： H01J29/04 ,  H01J1/15 ,  H01J1/18

    CPC分类号： H01J29/04 ,  H01J1/15

    摘要： A wire shaped electron source includes a heating core wire (10, 20a and 20b), an insulator (11, 22a, and 22b) partially provided on the heating core wire (10, 20a, and 20b), and an electron emission material provided on the heating core (10, 20a, and 20b) between the insulators (10, 20a, and 20b). The thickness of the electron emission material is less than the height of the insulators (10, 20a, and 20b). When the wire shape electron source is installed in the flat panel display device, the insulator (11, 21a, and 21b) prevents the electron emission material from vibrating and thus preventing any contact with the inner wall of the flat panel display device.