公开(公告)号：EP0813234A2

公开(公告)日：1997-12-17

申请号：EP97109395.0

申请日：1997-06-10

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hu, Jerry Che-Jen ,  Hong, Qi-Zhong ,  Hsia, Steve ,  Chen, Ih-Chin

IPC分类号： H01L21/336 ,  H01L21/225 ,  H01L21/285

CPC分类号： H01L29/66575 ,  H01L21/2257 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545

摘要： A method for forming a ultra-shallow junction region (104). A silicon film (single crystalline, polycrystalline or amorphous) is deposited on the substrate (100) to form an elevated S/D (106). A metal film is deposited over the silicon film and reacted with the silicon film to form a silicide film (108). The silicon film is preferably completely consumed by the silicide film formation. An implant is performed to implant the desired dopant either into the metal film prior to silicide formation or into the silicide film after silicide formation. A high temperature anneal is used to drive the dopant out of the silicide film to form the junction regions (104) having a depth in the substrate (100) less than 200A. This high temperature anneal may be one of the anneals that are part of the silicide process or it may be an additional process step.

摘要翻译： 一种形成超浅结区域（104）的方法。 在衬底（100）上沉积硅膜（单晶，多晶或无定形）以形成升高的S / D（106）。 在硅膜上沉积金属膜并与硅膜反应形成硅化物膜（108）。 硅膜优选被硅化物膜形成完全消耗。 进行植入以在硅化物形成之前将期望的掺杂剂注入到金属膜中，或者在硅化物形成之后进入硅化物膜。 使用高温退火来将掺杂剂驱出硅化物膜以形成在衬底（100）中具有小于200A的深度的结区（104）。 该高温退火可以是作为硅化物工艺的一部分的退火之一，或者可以是额外的工艺步骤。

公开(公告)号：EP0813234A3

公开(公告)日：1999-05-26

申请号：EP97109395.0

申请日：1997-06-10

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hu, Jerry Che-Jen ,  Hong, Qi-Zhong ,  Hsia, Steve ,  Chen, Ih-Chin

IPC分类号： H01L21/336 ,  H01L21/225 ,  H01L21/285

CPC分类号： H01L29/66575 ,  H01L21/2257 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545

摘要： A method for forming a ultra-shallow junction region (104). A silicon film (single crystalline, polycrystalline or amorphous) is deposited on the substrate (100) to form an elevated S/D (106). A metal film is deposited over the silicon film and reacted with the silicon film to form a silicide film (108). The silicon film is preferably completely consumed by the silicide film formation. An implant is performed to implant the desired dopant either into the metal film prior to silicide formation or into the silicide film after silicide formation. A high temperature anneal is used to drive the dopant out of the silicide film to form the junction regions (104) having a depth in the substrate (100) less than 200A. This high temperature anneal may be one of the anneals that are part of the silicide process or it may be an additional process step.