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公开(公告)号：EP0600436A3
公开(公告)日：1997-10-01
申请号：EP93119271.0
申请日：1993-11-30
CPC分类号： H01L21/768 , H01L21/76297 , H01L23/36 , H01L23/53271 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provided using polycrystalline silicon since it can have much higher resistivity than single crystal silicon. Accordingly, a circuit is provided wherein active devices are provided in single crystal silicon and interconnects are formed overlying polycrystalline silicon to provide transmission line interconnects between devices and obtain the desired high frequency response. This is accomplished by providing a highly doped silicon substrate of predetermined conductivity type having a less highly doped silicon layer thereon of the same conductivity type with an oxide layer over the less highly doped layer, forming mesas for formation therein of active elements in the structure having valleys between the mesas extending into the substrate, filling the valleys with very high resistivity polysilicon, forming an electrically insulating layer over the polysilicon, forming active elements with contacts thereto in the mesas and forming interconnects between contacts of the active elements extending over the high resistivity polysilicon regions and the electrically insulating material thereover.
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2.发明公开Semiconductor device, circuit and method of manufacture 失效Halbleiteranordnung，Schaltung und Verfahren zur Herstellung。
公开(公告)号：EP0600436A2
公开(公告)日：1994-06-08
申请号：EP93119271.0
申请日：1993-11-30
CPC分类号： H01L21/768 , H01L21/76297 , H01L23/36 , H01L23/53271 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provided using polycrystalline silicon since it can have much higher resistivity than single crystal silicon. Accordingly, a circuit is provided wherein active devices are provided in single crystal silicon and interconnects are formed overlying polycrystalline silicon to provide transmission line interconnects between devices and obtain the desired high frequency response.
This is accomplished by providing a highly doped silicon substrate of predetermined conductivity type having a less highly doped silicon layer thereon of the same conductivity type with an oxide layer over the less highly doped layer, forming mesas for formation therein of active elements in the structure having valleys between the mesas extending into the substrate, filling the valleys with very high resistivity polysilicon, forming an electrically insulating layer over the polysilicon, forming active elements with contacts thereto in the mesas and forming interconnects between contacts of the active elements extending over the high resistivity polysilicon regions and the electrically insulating material thereover.摘要翻译： 能够在微波范围内操作的单片集成电路，其使用硅技术制造，其中传输线互连与在同一衬底上的有源器件一起制造。 传输线使用多晶硅提供，因为它可以具有比单晶硅高得多的电阻率。 因此，提供了一种电路，其中在单晶硅中提供有源器件，并且在多晶硅上形成互连以提供器件之间的传输线互连并获得所需的高频响应。 这通过提供具有相同导电类型的具有较低掺杂硅层的预定导电类型的高掺杂硅衬底来实现，在较低掺杂层上具有氧化物层，形成台面以在其中形成结构中的有源元件，其中具有 位于延伸到衬底中的台面之间的谷部，用非常高电阻率的多晶硅填充谷，在多晶硅上形成电绝缘层，在台面中形成与其接触的有源元件，并且在高电阻率上延伸的有源元件的触点之间形成互连 多晶硅区域和其上的电绝缘材料。
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公开(公告)号：EP0600436B1
公开(公告)日：2003-07-30
申请号：EP93119271.0
申请日：1993-11-30
CPC分类号： H01L21/768 , H01L21/76297 , H01L23/36 , H01L23/53271 , H01L23/66 , H01L2924/0002 , H01L2924/00
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