公开(公告)号：EP1400835B1

公开(公告)日：2011-11-16

申请号：EP03090300.9

申请日：2003-09-16

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： Matsuoka,Takashi NTT Intellectual Property Center ,  Fukano,Hideki NTT Intellectual Property Center

IPC分类号： G02F1/017

CPC分类号： B82Y20/00 ,  G02F1/01725 ,  G02F2001/01766 ,  G02F2202/101 ,  H01S5/0265

公开(公告)号：EP1400835A3

公开(公告)日：2005-06-08

申请号：EP03090300.9

申请日：2003-09-16

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takashi, Matsuoka NTT Intellectual Property Center ,  Hideki, Fukano NTT Intellectual Property Center

IPC分类号： G02F1/017

CPC分类号： B82Y20/00 ,  G02F1/01725 ,  G02F2001/01766 ,  G02F2202/101 ,  H01S5/0265

摘要： In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In 1-X-Y Ga X Al Y N (0 ≦ X, Y ≦ 1, 0 ≦ X + Y ≦ 1) and In 1-X'-Y' Ga X' Al Y' N (0 ≦ X', Y' ≦ 1, 0 ≦ X' + Y' ≦ 1). An electric field is being generated in the light absorption layer by spontaneous polarization.

公开(公告)号：EP0810462A3

公开(公告)日：1998-09-09

申请号：EP97108638

申请日：1997-05-28

申请人： NEC CORP

发明人： SAKATA YASUTAKA

IPC分类号： G02F1/025 ,  G02F1/015 ,  G02F1/017

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/01725 ,  G02F2001/0157 ,  G02F2001/0175 ,  G02F2001/01766

摘要： Disclosed is an electro-absorption type semiconductor optical modulator utilizing the Quantum Confinement Stark Effect, in which a quantum well structure introduced in its optical absorption layer is arranged to have a potential structuresuch that one of the electron affinity and the energy of the top of the valence band increases in the laminating direction, while the other decreases, thereby canceling the built-in field. It is intended to lower the drive voltage and to enhance an on/off ratio (extinction ratio). Thus, the absorption peak becomes narrow at a no bias state to attain a low drive voltage and an enhanced extinction ratio.

摘要翻译： 公开了一种利用量子限制斯塔克效应的电吸收型半导体光调制器，其中在其光吸收层中引入的量子阱结构被布置成具有这样的潜在结构：电子亲和力和顶部的能量之一 价带在层叠方向上增加，而另一方降低，从而取消内置场。 旨在降低驱动电压并提高开/关比（消光比）。 因此，在无偏压状态下，吸收峰变窄，达到低驱动电压和提高的消光比。

公开(公告)号：EP0420749B1

公开(公告)日：1997-03-12

申请号：EP90402653.1

申请日：1990-09-26

申请人： FUJITSU LIMITED

发明人： Sugawara, Mitsuru

IPC分类号： H01L31/0352 ,  G02F1/015

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2001/01766 ,  H01L31/035236

公开(公告)号：EP2049939A1

公开(公告)日：2009-04-22

申请号：EP07801537.7

申请日：2007-08-07

申请人： PAUL SCHERRER INSTITUT ,  Politecnico di Milano

发明人： CHRASTINA, Daniel ,  SIGG, Hans-Christen ,  SOICHIRO, Tsujino ,  VON KÄNEL, Hans

IPC分类号： G02F1/017 ,  H01L21/205

CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02F1/01716 ,  G02F2001/0175 ,  G02F2001/01766 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532

摘要： Optical modulators include active quantum well structures (200) coherent with pseudosubstrates (100) comprising relaxed buffer layers (104, 106, 108, 110) on a silicon substrate (102). In a preferred method the active structures, consisting of Si1-x Gex barrier and well layers with different Ge contents x, are chosen in order to be strain compensated. The Ge content in the active structures may vary in a step-wise fashion along the growth direction or in the form of parabolas within the quantum well regions. Optical modulation may be achieved by a plurality of physical effects, such as the Quantum Confined or Optical Stark Effect, the Franz-Keldysh Effect, exciton quenching by hole injection, phase space filling or temperature modulation. In a preferred method the modulator structures are grown epitaxially by low-energy plasma-enhanced chemical vapor deposition (LEPCVD).

摘要翻译： 光调制器包括与在硅衬底（102）上包括松弛缓冲层（104,106,108,110）的假基底（100）相干的有源量子阱结构（200）。 在优选的方法中，选择由Si 1-x Ge x势垒和具有不同Ge含量x的阱层组成的有源结构以进行应变补偿。 有源结构中的Ge含量可以沿着生长方向逐步变化，或者在量子阱区域内以抛物线的形式变化。 光学调制可以通过多种物理效应来实现，例如量子限制或光学斯塔克效应，Franz-Keldysh效应，通过空穴注入的激子猝灭，相空间填充或温度调制。 在优选的方法中，调制器结构通过低能等离子体增强化学气相沉积（LEPCVD）外延生长。

公开(公告)号：EP1407315A2

公开(公告)日：2004-04-14

申请号：EP02744691.3

申请日：2002-06-28

申请人： Optium Corporation

发明人： KRASULICK, Stephen, B. ,  GRENDA, Terence, D. ,  YU, Paul

IPC分类号： G02F1/017 ,  G02F1/015 ,  G02F1/01 ,  H01S5/026 ,  H01S5/06 ,  H04B10/155

CPC分类号： B82Y20/00 ,  G02F1/0121 ,  G02F1/01708 ,  G02F2001/01766 ,  G02F2202/102 ,  H01S5/0265 ,  H01S5/0617 ,  H01S5/06804

摘要： An electro-absorption modulator and electro-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating though the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.

公开(公告)号：EP1205784A2

公开(公告)日：2002-05-15

申请号：EP01118651.7

申请日：1995-06-14

申请人： AT&T Corp.

发明人： Cunningham, John Edward ,  Pathak, Rajiv Nath ,  Goossen, Keith Wayne

IPC分类号： G02F1/017

CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02B2006/12142 ,  G02F2001/01766 ,  G02F2202/102 ,  G02F2203/02 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  Y10S438/938

摘要： A multiple quantum well light modulator is provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 µm. The modulator is characterized by a lattice mismatch of less than 2 X 10 -4 .

摘要翻译： 提供了一种多量子阱光调制器，其包括设置在InP衬底上的InP的多个量子阱区的InP半导体衬底，由InGaAs构成并具有约4μm的厚度。 调制器的特征在于小于2×10 -4的晶格失配。

公开(公告)号：EP0810462A2

公开(公告)日：1997-12-03

申请号：EP97108638.4

申请日：1997-05-28

申请人： NEC CORPORATION

发明人： Sakata, Yasutaka

IPC分类号： G02F1/015

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/01725 ,  G02F2001/0157 ,  G02F2001/0175 ,  G02F2001/01766

摘要： Disclosed is an electro-absorption type semiconductor optical modulator utilizing the Quantum Confinement Stark Effect, in which a quantum well structure introduced in its optical absorption layer is arranged to have a potential structuresuch that one of the electron affinity and the energy of the top of the valence band increases in the laminating direction, while the other decreases, thereby canceling the built-in field. It is intended to lower the drive voltage and to enhance an on/off ratio (extinction ratio). Thus, the absorption peak becomes narrow at a no bias state to attain a low drive voltage and an enhanced extinction ratio.

公开(公告)号：EP0643317A2

公开(公告)日：1995-03-15

申请号：EP94306216.6

申请日：1994-08-23

申请人： NORTHERN TELECOM LIMITED

发明人： Thompson, George Horace Brooke ,  Czajkowski, Igor Kajetan ,  Gibbon, Mark Acton

IPC分类号： G02F1/015

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2001/01766

摘要： The saturation effects observed in an MQW electro-absorption modulator are reduced by modifying the composition of the MQW structure so that the barrier layers (35,36), that are interleaved with the quantum well layers (34), are in tension.

摘要翻译： 在MQW电吸收调制器中观察到的饱和效应通过修改MQW结构的组成而减小，使得与量子阱层（34）交错的势垒层（35,36）处于张力。

公开(公告)号：EP2927966A1

公开(公告)日：2015-10-07

申请号：EP14193695.5

申请日：2014-11-18

申请人： Samsung Electronics Co., Ltd ,  Gwangju Institute of Science and Technology

发明人： Cho, Yongchul ,  Lee, Yongtak ,  Na, Byunghoon ,  Park, Changyoung ,  Ju, Gunwu ,  Park, Yonghwa

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02F1/017

CPC分类号： G02F1/01725 ,  B82Y20/00 ,  G02F1/133605 ,  G02F2001/0157 ,  G02F2001/01733 ,  G02F2001/0175 ,  G02F2001/01766 ,  H01L23/528 ,  H01L23/53223 ,  H01L31/00 ,  H01L31/035236 ,  H01L31/075 ,  H01L31/105 ,  H01L33/04 ,  H01L33/10 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/05124 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/12042 ,  Y02E10/548 ,  Y10S977/755

摘要： An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

摘要翻译： 光学装置包括有源层，其包括至少两个外部屏障和至少一个耦合的量子阱，所述耦合量子阱插入在所述至少两个外部屏障之间。 每个耦合量子阱包括至少三个量子阱层和分别设置在至少三个量子阱层之间的至少两个耦合势垒。 设置在至少三个量子阱层的相对端部的两个量子阱层的厚度小于设置在相对端部处的两个量子阱层之间的另一个量子阱层的厚度。 设置在相对端部的两个量子阱层的带隙可以高于设置在两个量子阱层之间的另一个量子阱层的带隙。