公开(公告)号：EP2477234A4

公开(公告)日：2018-05-09

申请号：EP10813575

申请日：2010-07-21

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： AKITA KATSUSHI ,  ISHIZUKA TAKASHI ,  FUJII KEI ,  NAGAI YOUICHI

IPC分类号： H01L31/10

CPC分类号： H01L31/035209 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

公开(公告)号：EP1749317B1

公开(公告)日：2017-01-18

申请号：EP05747600.4

申请日：2005-04-25

申请人： OSRAM Opto Semiconductors GmbH

发明人： ILLEK, Stefan ,  STEIN, Wilhelm ,  WALTER, Robert ,  WIRTH, Ralph

IPC分类号： H01L21/20 ,  H01L21/24 ,  H01L21/76 ,  H01L21/363 ,  H01L33/00

CPC分类号： H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

公开(公告)号：EP3050092A1

公开(公告)日：2016-08-03

申请号：EP13894917.7

申请日：2013-09-27

申请人： Intel Corporation

发明人： GOEL, Niti ,  CHAU, Robert S. ,  KAVALIEROS, Jack T. ,  CHU-KUNG, Benjamin ,  METZ, Matthew V. ,  MUKHERJEE, Niloy ,  ZELICK, Nancy M. ,  DEWEY, Gilbert ,  RACHMADY, Willy ,  RADOSAVLJEVIC, Marko ,  LE, Van H. ,  PILLARISETTY, Ravi ,  DASGUPTA, Sansaptak

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/0245 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02598 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/8252 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/165 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66795 ,  H01L29/785

摘要： A single fin or a pair of co-integrated n- and p- type single crystal electronic device fins are epitaxially grown from a substrate surface at a bottom of one or a pair of trenches formed between shallow trench isolation (STI) regions. The fin or fins are patterned and the STI regions are etched to form a height of the fin or fins extending above etched top surfaces of the STI regions. The fin heights may be at least 1.5 times their width. The exposed sidewall surfaces and a top surface of each fin is epitaxially clad with one or more conformal epitaxial materials to form device layers on the fin. Prior to growing the fins, a blanket buffer epitaxial material may be grown from the substrate surface; and the fins grown in STI trenches formed above the blanket layer. Such formation of fins reduces defects from material interface lattice mismatches.

公开(公告)号：EP2772951A4

公开(公告)日：2015-07-15

申请号：EP12844259

申请日：2012-10-02

申请人： SHOWA DENKO KK

发明人： MATSUMURA ATSUSHI ,  TOKUNAGA YUU

IPC分类号： H01L33/38 ,  H01L21/02 ,  H01L21/205 ,  H01L33/00 ,  H01L33/14 ,  H01L33/36 ,  H01L33/40 ,  H01L33/44 ,  H05K1/02 ,  H05K1/05 ,  H05K3/46

CPC分类号： H01L33/145 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44

摘要： A light-emitting diode with reduced light absorption, a method of manufacturing the same, a lamp and an illumination device are provided. A light-emitting diode (100) is provided with: a compound semiconductor layer (10) including a light-emitting layer (24) provided on a substrate (1); an ohmic contact electrode (7) provided between the substrate (1) and the compound semiconductor layer (10); an ohmic electrode (11) provided on the side of the compound semiconductor layer (10) opposite to the substrate (1); a surface electrode (12) including a branch section (12b) provided so as to cover the surface of the ohmic electrode (11) and a pad section (12a) coupled to the branch section (12b); and a current-blocking portion (13) provided between an under-pad light-emitting layer (24a) arranged in an area of the light-emitting layer (24) that overlaps the pad section (12a) in a planar view and a light-emitting layer (24) arranged in an area except the area that overlaps the pad section (12a) in a planar view, to prevent the current supplied to the under-pad light-emitting layer (24a).

摘要翻译： 本发明提供一种发光二极管的光的光吸收减少，其制造，灯和照明装置的方法。 一种发光二极管（100）设置有：包含设置在基板上的发光层（24）的化合物半导体层（10）（1）; 在欧姆接触电极（7）设置在基板（1）和化合物半导体层（10）之间; 在设置在所述化合物半导体层（10）的侧欧姆电极（11）相对的基板（1）; 的表面电极（12）包括一个分支部分（12B）设置成覆盖所述欧姆电极（11）和焊盘部（12a）的表面耦合到所述分支部分（12B）; 和之间下焊盘上布置发光的发光层（24）那样的区域层（24a）的重叠在平面视图和光焊盘部（12）提供的电流 - 阻挡部分（13） 布置在区域以外的区域-emitting层（24）做了重叠在平面视图中的焊盘部（12A），以防止被送入到下焊盘发光层（24A）的电流。

公开(公告)号：EP2837021A1

公开(公告)日：2015-02-18

申请号：EP13776142.5

申请日：2013-03-28

申请人： Tandem Sun AB

发明人： SUN, Yanting ,  LOURDUDOSS, Sebastian

IPC分类号： H01L21/205

CPC分类号： H01L31/0725 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/0265 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/107 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01S5/32308 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device and semiconductor manufactured thereby, comprising growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate (50) that can be used as light emitting and photovoltaic devices.

公开(公告)号：EP2737535A2

公开(公告)日：2014-06-04

申请号：EP12743934.7

申请日：2012-07-17

申请人： Gasp Solar ApS

发明人： AAGESEN, Martin ,  JØRGENSEN, Henrik Ingerslev ,  HOLM, Jeppe Vilstrup ,  SCHALDEMOSE, Morten

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L31/0352 ,  H01L21/02

CPC分类号： H01L31/03046 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/035227 ,  H01L31/0687 ,  H01L31/1852 ,  Y02E10/544

摘要： The application discloses a technique for fabricating gallium-arsenide-phosphorous (GaAsP) nanostructures using gallium-assisted (Ga-assisted) Vapour-Liquid-Solid (VLS ) growth, i.e. without requiring gold catalyst particles. The resulting Ga-assisted GaAsP nanostructures may be free of gold particles, which renders them useful for optoelectronic applications, e.g. as a junction in a solar cell. The Ga-assisted GaAsP nanostructures can be fabricated with a band gap in the range 1.6 to 1.8 eV (e.g. at and around 1.7 eV).

公开(公告)号：EP1770767B1

公开(公告)日：2014-05-28

申请号：EP06019935.3

申请日：2006-09-22

申请人： OSRAM Opto Semiconductors GmbH

发明人： Linder, Norbert ,  Grönninger, Günther ,  Heidborn, Peter ,  Streubel, Klaus ,  Kugler, Siegmar

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L33/02 ,  H01L33/04 ,  H01L33/30

CPC分类号： H01L33/04 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L33/025 ,  H01L33/30

公开(公告)号：EP1635383B1

公开(公告)日：2013-04-03

申请号：EP05019490.1

申请日：2005-09-07

申请人： Sharp Kabushiki Kaisha

发明人： Takamoto, Tatsuya ,  Agui, Takaaki

IPC分类号： H01L21/02 ,  H01L31/18 ,  C30B25/18 ,  H01L21/20

CPC分类号： C30B25/18 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/02546 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

公开(公告)号：EP2428981A1

公开(公告)日：2012-03-14

申请号：EP11192479.1

申请日：2007-07-19

申请人： Cyrium Technologies Incorporated

发明人： Puetz, Norbert ,  Fafard, Simon ,  Riel, Joseph, René, Bruno

IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L29/12 ,  H01L31/0256 ,  H01L21/02 ,  H01L33/00 ,  H01L31/074

CPC分类号： H01L33/0066 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L31/074 ,  Y02E10/50

摘要： An opto-electronic device, such as a solar cell or a light emitting diode, is fabricated by forming a nucleating layer (22) on a p-type group IV layer (20). The nucleating layer (22) includes a III-V compound selected from the group consisting of AlAs, AlSb, AIN, Bas, BSb, GaN, GaSB, and InAs. A first III-V compound layer (24) is formed on the nucleating layer (22) and includes as group III element, at least one of gallium, indium, and aluminium, and as a group V element, phosphorus. The p-type group IV layer, which may be a p-type silicon layer, includes phosphorus atoms diffused from the first III-V compound layer, the concentration of the phosphorus atoms therein being a function of the thickness of the nucleating layer. The first III-V compound layer includes group IV atoms diffused from the p-type group IV layer, the concentration of the group IV atoms therein being a function of the thickness of the nucleating layer.

摘要翻译： 一种光电器件，检查作为太阳能电池或发光二极管中，通过形成p型IV族层（20）上的成核层（22）制成。 该成核层（22）包括选自的AlAs，的AlSb，AlN，BAS，BSb的，氮化镓，GaSb和InAs构成中选择的III-V族化合物。 第一III-V族化合物层（24）形成在成核层（22）上，并且包括作为III族元素，镓中的至少一种，铟和铝，以及作为V族元素，磷。 在p型基IV层，其可以是p型硅层，包括从所述第一III-V族化合物层扩散磷原子，磷原子。其中是所述成核层的厚度的函数的浓度。 在第一III-V族化合物层包括从p型IV族层扩散IV族原子，IV族原子。其中是所述成核层的厚度的函数的浓度。

公开(公告)号：EP2335273A4

公开(公告)日：2012-01-25

申请号：EP09815273

申请日：2009-09-18

申请人： TAIWAN SEMICONDUCTOR MFG

发明人： FIORENZA JAMES ,  LOCHTEFELD ANTHONY ,  BAI JIE ,  PARK JI-SOO ,  HYDRICK JENNIFER ,  LI JIZHONG ,  CHENG ZHIYUAN

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L31/042

CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.