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173 条记录 (耗时 0.014 秒)

    MICROWAVE/MILLIMETER WAVE SENSOR APPARATUS
    3.
    发明公开
    MICROWAVE/MILLIMETER WAVE SENSOR APPARATUS 审中-公开
    微波/毫米波传感器装置

    公开(公告)号：EP2144080A4

    公开(公告)日：2012-06-20

    申请号：EP08739940

    申请日：2008-03-31

    申请人： NAT INST INF & COMM TECH

    发明人： UTAGAWA HITOSHI ,  MATSUI TOSHIAKI

    IPC分类号： G01S7/03 ,  G01S13/04 ,  G01S13/34 ,  G01S13/87 ,  G01S13/93 ,  H01Q1/22 ,  H01Q9/28 ,  H01Q23/00 ,  H03B5/18

    CPC分类号： G01S7/03 ,  G01S7/032 ,  G01S13/34 ,  G01S13/87 ,  G01S13/931 ,  G01S2013/9375 ,  G01S2013/9378 ,  G01S2013/9385 ,  H01Q1/2208 ,  H01Q9/285 ,  H01Q23/00 ,  H03B5/1852

    摘要： The present invention relates to a microwave/millimeter wave sensor apparatus that can obtain highly-sensitive sensing information, while being a simple structure, being inexpensive, and having high power efficiency. In the microwave/millimeter wave sensor apparatus according to this invention, a planar radiation type oscillator substrate (S1) having an inner-layer GND (12) interposed between a front surface side dielectric substrate (10) and a rear surface side dielectric substrate (11) has a pair of conductor patches (4, 4) in an axis-symmetric manner on the side of the front surface layer (16). A gate (2) and a drain (3) of a microwave transistor (1) are respectively connected to the conductor patches (4, 4) to supply power to the gate (2) and the drain (3) of the microwave transistor (1) through a gate-side RF choke circuit (5a) and a drain-side RF choke circuit (5b). An impedance line (9) satisfying an oscillation condition is connected to a source (8) and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.

    Analog circuit
    4.
    发明公开
    Analog circuit 有权
    模拟电路

    公开(公告)号：EP2166667A3

    公开(公告)日：2010-05-05

    申请号：EP09179509.6

    申请日：2006-03-20

    申请人： FUJITSU LIMITED

    发明人： Shigematsu, Hisao

    IPC分类号： H03F3/60 ,  H03F1/56 ,  H03B5/12 ,  H03B7/14

    CPC分类号： H03F3/605 ,  H03B5/1203 ,  H03B5/1228 ,  H03B5/1243 ,  H03B5/1262 ,  H03B5/1852 ,  H03F1/56 ,  H03F2200/213 ,  H03F2200/222

    摘要： An analog circuit is provided, comprising an input transistor and an input capacitance change circuit changing input capacitance of said input transistor. The input capacitance change circuit comprises at least one of a variable resistor circuit connected to a source of said input transistor and a variable capacitor circuit connected to the source off said input transistor.

    摘要翻译： 提供了一种模拟电路，包括输入晶体管和改变所述输入晶体管的输入电容的输入电容改变电路。 输入电容改变电路包括连接到所述输入晶体管的源极的可变电阻器电路和连接到所述输入晶体管的源极的可变电容器电路中的至少一个。

    MICROWAVE/MILLIMETER WAVE SENSOR APPARATUS
    5.
    发明公开
    MICROWAVE/MILLIMETER WAVE SENSOR APPARATUS 审中-公开
    MIKROWELLEN- / MILLIMETERWELLEN-SENSORVORRICHTUNG

    公开(公告)号：EP2144080A1

    公开(公告)日：2010-01-13

    申请号：EP08739940.8

    申请日：2008-03-31

    申请人： National Institute Of Information And Communication Technology

    发明人： UTAGAWA, Hitoshi ,  MATSUI, Toshiaki

    IPC分类号： G01S7/03 ,  G01S13/04

    CPC分类号： G01S7/03 ,  G01S7/032 ,  G01S13/34 ,  G01S13/87 ,  G01S13/931 ,  G01S2013/9375 ,  G01S2013/9378 ,  G01S2013/9385 ,  H01Q1/2208 ,  H01Q9/285 ,  H01Q23/00 ,  H03B5/1852

    摘要： The present invention relates to a microwave/millimeter wave sensor apparatus that can obtain highly-sensitive sensing information, while being a simple structure, being inexpensive, and having high power efficiency. In the microwave/millimeter wave sensor apparatus according to this invention, a planar radiation type oscillator substrate (S1) having an inner-layer GND (12) interposed between a front surface side dielectric substrate (10) and a rear surface side dielectric substrate (11) has a pair of conductor patches (4, 4) in an axis-symmetric manner on the side of the front surface layer (16). A gate (2) and a drain (3) of a microwave transistor (1) are respectively connected to the conductor patches (4, 4) to supply power to the gate (2) and the drain (3) of the microwave transistor (1) through a gate-side RF choke circuit (5a) and a drain-side RF choke circuit (5b). An impedance line (9) satisfying an oscillation condition is connected to a source (8) and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.

    摘要翻译： 微波/毫米波传感器装置技术领域本发明涉及一种微波/毫米波传感器装置，其可以获得高灵敏度的感测信息，而且结构简单，价格便宜，功率效率高。 在根据本发明的微波/毫米波传感器装置中，具有介于前表面侧电介质基板（10）和背面侧电介质基板（10）之间的内层GND（12）的平面放射型振荡器基板（S1） 11）在前表面层（16）侧具有轴对称的一对导体贴片（4,4）。 微波晶体管（1）的栅极（2）和漏极（3）分别连接到导体贴片（4,4）以向微波晶体管（2）和漏极（3）的栅极（2）和漏极（3） 1）通过栅极侧RF扼流圈电路（5a）和漏极侧RF扼流圈（5b）。 满足振荡条件的阻抗线（9）被连接到源（8），并且发射RF区中的发射RF信号作为平面辐射型振荡器，并且从测量对象接收作为反射波的接收RF信号， 从而通过零差混合获得IF信号作为感测信息。

    Mikrowellen-Oszillator
    6.
    发明公开
    Mikrowellen-Oszillator 审中-公开
    微波振荡器

    公开(公告)号：EP1353437A3

    公开(公告)日：2003-12-10

    申请号：EP03007667.3

    申请日：2003-04-03

    申请人： InnoSenT GmbH

    发明人： Lenhard, Thilo ,  Diefenbacher, Michael ,  Weidmann, Wolfgang

    IPC分类号： H03B5/18

    CPC分类号： H03B5/1852

    摘要： Die Erfindung richtet sich auf einen Mikrowellen-Oszillator mit einem Verstärkungselement, dessen Ausgangssignal über ein Rückkopplungsnetzwerk mit einer frequenzabhängigen Übertragungskennlinie zu seinem Eingang zurückgeführt ist, wobei die Zurückführung mittels zweier streifenartiger Mikrowellenleiter erfolgt, die auf einem Substrat angeordnet sind, wobei der eine Mikrowellenleiter an einem Eingangsanschluß des Verstärkungselements (Eingangs-Mikrowellenleiter) und der andere Mikrowellenleiter an einem Ausgangsanschluß desselben angeschlossen ist (Ausgangs-Mikrowellenleiter), und wobei das Rückkopplungsnetzwerk eine flächige Mikrowellenleiter-Struktur umfaßt, die zwischen dem Eingangs-Mikrowellenleiter und dem Ausgangs-Mikrowellenleiter eingefügt ist und eine maximale Ausdehnung aufweist, die insbesondere kürzer ist als die Gesamtlänge des Eingangs-Mikrowellenleiters und insbesondere auch kürzer als die Gesamtlänge des Ausgangs-Mikrowellenleiters.

    MIKROWELLEN-PULSGENERATOR
    8.
    发明公开
    MIKROWELLEN-PULSGENERATOR 失效
    MIKRO WELLEN脉冲发生器

    公开(公告)号：EP0954902A1

    公开(公告)日：1999-11-10

    申请号：EP98902950.0

    申请日：1998-01-12

    申请人： VEGA Grieshaber GmbH & Co.

    发明人： FEHRENBACH, Josef ,  STORZ, Gregor ,  SCHULTHEISS, Daniel

    IPC分类号： G01S7 ,  H03B5 ,  G01S13

    CPC分类号： G01S7/282 ,  G01S13/0209 ,  H03B5/1852

    摘要： The invention relates to a microwave pulse generator for generating microwave pulses with nanosecond pulse duration, comprising a pulse generator generating control pulses of a constant pulse width and a microwave oscillator generating microwave oscillations. The microwave oscillator is fitted with a transistor amplifier, to which a frequency-determining resonant circuit and an ohmic device for reducing the resonant circuit sharpness are connected in such a way that a control pulse of the pulse generator guided to the transistor amplifier on an input binder leads to a tappable microwave oscillation on an output binder of the microwave oscillator, which follows at least approximately the trajectory of the control pulse.

    Frequency multiplier and voltage controlled oscillator
    10.
    发明公开
    Frequency multiplier and voltage controlled oscillator 失效
    Frequenzvervielfacher und Spannungsgesteuerter Oszillator

    公开(公告)号：EP0829953A3

    公开(公告)日：1998-05-20

    申请号：EP97115956.1

    申请日：1997-09-12

    申请人： DENSO CORPORATION

    发明人： Matsugatani, Kazuoki ,  Sawada, Manabu ,  Sasaki, Kunihiko

    IPC分类号： H03B19/14 ,  H03B5/18

    CPC分类号： H03B5/1852 ,  H03B1/04 ,  H03B2200/0028 ,  H03B2200/0062 ,  H03B2200/0092 ,  H03B2201/0208 ,  H03C3/08 ,  H03C3/20

    摘要： In a frequency multiplier (31) constructed to input an input signal to a transistor (32) through an input matching circuit (33) and output a multiplied output signal outputted from the transistor (32) through a reflecting type fundamental wave signal band suppressing circuit (41) and an output matching circuit (42), a transmission line (40) for producing a standing wave is disposed between the output terminal of the transistor (32) and the input terminal of the reflecting type fundamental wave signal band suppressing circuit (41). Because the voltage acting on the output terminal of the transistor (32) consequently increases, the transistor (32) operates at a point at which the nonlinearity of its input-output characteristic is greater and the output power of the multiplied output signal increases.

    摘要翻译： 压控振荡器包括：由晶体管（114）和用于向所述晶体管（114）施加正反馈的反馈电路（115）构成的负电阻电路（112）和用于选择振荡频率的谐振电路（113） 当信号在所述负电阻电路（112）和所述谐振电路（113）之间来回传递时。 用于改变所述振荡频率的控制通过改变施加到所述振荡器的直流偏置电压来进行。 通过反馈电路的重新平衡来提高直流偏置电压和振荡频率之间的线性度，以降低反馈强度。 这通过设置反馈电路中的传输线的长度来实现。