摘要:
An electric charge is supplied to or received from capacitors (C1, C2) when a piezoelectric element (C3) is charged or discharged by controlling transistors (Q17, Q18, Q15, Q10) which are in a first charging path (CL1) for charging from a power supply to the piezoelectric element (C3), a second charging path (CL2) for charging from the capacitors (C1, C2) to the piezoelectric element (C3), a first discharging path (DL1) for discharging from the piezoelectric element (C3) to ground (G) and a second discharging path (DL2) for discharging from the piezoelectric element (C3) to the capacitors (C1, C2), respectively.
摘要:
Circuit rapide de commutation de tension, insensible à l'application d'une tension inverse sur ses bornes d'entrée. Ce circuit comprend des circuits à transistors de relais de tension à agencement symétrique couplés respectivement entre une première et une deuxième borne d'entrée de tension et une borne de sortie de tension commutée. Le premier circuit à transistors de relais de tension sert à relayer à la borne de sortie une première tension appliquée à la première borne d'entrée, en réponse à l'application régulée de courant directement à la borne de sortie par une première source de courant commuté. De manière analogue, le deuxième circuit à transistors de relais de tension sert à relayer directement à la borne de sortie une deuxième tension appliquée à la deuxième borne d'entrée, en réponse à la suppression de courant de la borne de sortie à l'aide d'une deuxième source de courant commuté. Chaque circuit à transistors de relais de tension comprend de préférence deux paires de transistors bipolaires de polarités complémentaires, dont les jonctions base-émetteur sont couplées en série entre la première borne d'entrée de tension et la borne de sortie, de sorte qu'il ne se produise essentiellement aucune chute de tension entre une borne d'entrée de tension et la borne de sortie. Afin d'empêcher toute inversion involontaire lors de l'application des tensions élevée et faible aux bornes d'entrée de tension du circuit commutateur, un circuit de protection contre l'inversion de tension est couplé entre les premier et deuxième circuits à transistors de relais de tension, et sert à limiter le flux de courant à travers lesdits circuits à transistors de relais de tension.
摘要:
A timing delay circuit (34) includes a first transistor (Q5) having a control electrode (Q5B) coupled to an input terminal (34a), a reference electrode (Q5C) coupled to a first DC bias terminal (28a) and an output electrode (Q5E) coupled to an output terminal (34b) of the timing delay circuit (34); a second transistor (Q6) having a control electrode (Q6B) coupled to the input terminal (34a), a reference electrode (Q6C) coupled to a second bias terminal (28b) and an output electrode (Q6E); and a third transistor (Q7) having a control electrode (Q7B) coupled to the output electrode (Q6E) of the second transistor (Q6), a reference electrode (Q7C) coupled to the second bias terminal (28b) and an output electrode (Q7E) coupled to the output terminal (34b) of the timing delay circuit (34). The timing delay circuit (34) is the output stage of a driver circuit (28) for a PIN diode (36) which acts as a limiter between a radar transmit/receive duplexor (14) and the radar receiver (20). Control logic signals are applied to a line circuit (24) and converted into signals of suitable voltage and current by a CCD device (26), a voltage translator circuit (30), and a current amplifier (32) before application to the input terminal (34a) of the timing delay circuit (34), which ensures rapid switching.
摘要:
The present invention relates to fast complementary emitter follower drivers/buffers to be used in either a CMOS or pure complementary bipolar environment. The output driver (22) comprises top NPN and bottom PNP output transistors (T1, T2) with a common output node (N) connected therebetween. A terminal (15) is connected to the said output node (N) where the output signal (VOUT) is available. The pair of bipolar output transistors is biased between the first and second supply voltages (VH, GND). The output driver is provided with a voltage translator circuit (S) connected between the base nodes (B1, B2) of the output transistors (T1, T2). Logic signals (IN1, IN2), supplied by a preceding driving circuit (21), are applied to said base nodes. According to the invention, the voltage translator circuit (S) comprises two diodes (D1, D2) connected in series, preferably implemented with a main bipolar transistor having a junction shorted by a diode connected transistor to form a Darlington-like configuration. As a result, the voltage shift VS between the base nodes is selected to have the said output transistors operating at an operating point which ensures minimum delay and power consumption. In a typical bipolar technology, VS is made to be a approximately equal to 1,5 V. Additional features comprise the connection of a capacitor (C) between the base nodes and resistances (R1, R2) to the base nodes. The preceding driving circuit may be a CMOS logic gate or an ECL logic circuit.
摘要:
Ein mit einer Gegentaktendstufe (T1,T2) und einer Differenzverstärkerstufe (T3,T4) ausgestatteter, gegengekoppelter Minimaloperationsverstärker, der als Referenzpotential ein gegebenes Bezugspotential erhält, schließt Signale, die auf den Ausgang (A) des Operationsverstärkers gegeben werden, gegen das gegebene Bezugspotential kurz, wenn der durch die Stromquelle (Q) eingeprägte Ruhestrom der Differenzverstärkerstufe (T3,T4) zugeschaltet wird. Bei abgeschaltetem Ruhestrom der Differenzverstärkerstufe (T3,T4) übt durch das Sperren der Transistoren der Gegentaktendstufe (T1,T2) der Operationsverstärker keinen Einfluß auf das Signal aus.
摘要:
An emitter follower series-connected pair of complementary transistors (2,3) provide an output signal at the junction (20) between their commonly connected emitters. The NPN transistor (2) of the pair oftransistors (2,3) is directly driven by an input signal applied to its base. The PNP transistor (3) ofthe pair of transistors (2,3) is driven through a series connection of a NPN transistor (1) and a Schottky diode (4), the base ofthe NPN transistor (1) also receiving said input signal. The forward voltage of the Schottky diode (4) is less than the voltage V b e of the PNP transistor (3). The PNP transistor (3) nominally is held off and conducts only on negative-going input signal transitions to discharge the capacitive load (6). The NPN transistor (2) of the pair of transistors conducts only on positive-going input signal transitions to charge the capacitive load (6). The circuit (14) which has a low power dissipation and a fast response for driving capacitive loads can be extended (15,16) to perform NOR logic and to provide a pair of output signals in phase opposition to each other.
摘要:
To realize a driving circuit and a charging pump booster circuit utilizing said [driving circuit] capable of reducing the power consumption and the noise generated during switching. Transistors Q1 and Q2 are controlled based on a control signal input into an input terminal T in , and a charge/discharge current is output to an output terminal T out . The base of a transistor Q5, having almost the same characteristics as those of the transistor Q1, is connected to the base of the transistor Q1 in order to have the transistor Q5 generate a current corresponding to the turning on/off of the transistor Q1, and the current from said transistor Q5 is reflected toward a resistance element R1 by means of a current mirror circuit comprising transistors Q6 and Q7, so that base voltage of the transistor Q2 can be set lower while the transistor Q1 is on in order to hold the transistor Q2 to the OFF status. As a result, leak-through current in the transistors Q1 and Q2 can be reduced and switching noises created by said leak-through current can be restrained.
摘要:
A charge pump circuit for production of an output voltage (UA), greater than a supply voltage (VDD) for the charge pump circuit is disclosed, comprising a first and a second charge store (C1, C2), which are controlled in such a way and connected to each other such that the output voltage (UA) is higher than the voltage limit of the individual capacitors (C1, C2). Switching means (T2, T3) are alternately switched on and off depending on a high frequency signal (CLK) so that during a first clock phase the first charge store (C1) is charged up and during a second clock phase the charge in the first charge store is transferred to the second charge store (C2). The charge pump circuit is characterised in low current requirement, high output voltages (UA) and generation of an output voltage (UA) with low internal resistance. In a preferred embodiment the switching means comprise bipolar transistors, fitted with anti-saturation circuits (AS1, AS2).
摘要:
A voltage to current conversion switching system includes an input terminal (12) for receiving input signal voltage to be converted to a current; an output terminal (24); a first, positive channel (14) having a first offset amplifier (18) for introducing a positive offset to the input signal; a first voltage to current amplifier (20) responsive to the first offset amplifier; and first switching means (22) responsive to the first voltage to current amplifier to provide a first offset current signal (I₁) to the output terminal; a second, negative channel (16) having a second offset amplifier (26) for introducing a negative offset to the input signal; a second voltage to current amplifier (28) responsive to the second offset amplifier; and second switching means (30) responsive to the second voltage to current amplifier to provide a second equal and opposite offset current signal (I₂) to the output terminal to compensate for the temperature drift and switching current injection in the first and second offset current signals; and drive means (32) for actuating the first and second switch means simultaneously to open and close and periodically combine the first and second offset current signals to produce an output current compensated for temperature drift and switching current injection.