公开(公告)号：EP0580921A1

公开(公告)日：1994-02-02

申请号：EP92830420.3

申请日：1992-07-28

申请人： SGS-THOMSON MICROELECTRONICS S.r.l.

发明人： Poletto, Vanni ,  Morelli, Marco

IPC分类号： G05F1/56 ,  G05F1/569 ,  H03K17/04

CPC分类号： G05F1/569 ,  H03K17/0422

摘要： Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Differently from the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.

摘要翻译： 双极功率晶体管的饱和度通过感测由饱和晶体管最终注入到集成电路的衬底中的电流来控制，并且使用该信号对通过功率晶体管的基极驱动的电流施加限制作用 专用驱动电路。 与现有技术的抗饱和系统不同，不再需要精确地监视双极功率晶体管的端子两端的工作电压。 合适的感测电阻可以方便地集成在与双极晶体管的经常复杂的集成结构相距一定距离处。 本发明的系统提供许多优点，并且仅当功率晶体管已经确实达到饱和状态，但在任何不期望的后果之前才能确保抗饱和电路的干预。

公开(公告)号：EP0516848A4

公开(公告)日：1993-04-28

申请号：EP91904332

申请日：1991-02-21

申请人： KABUSHIKI KAISHA SANKYO SEIKI SEISAKUSHO

发明人： NAITO, HAYATO, K.K. SANKYO SEIKI SEISAKUSHO

IPC分类号： H03F1/32 ,  H03F3/343 ,  H03K17/0422 ,  H03K19/013

CPC分类号： H03K19/013 ,  H03F1/32 ,  H03F3/343 ,  H03K17/0422

公开(公告)号：EP0461405A3

公开(公告)日：1992-02-19

申请号：EP91107744.4

申请日：1991-05-14

申请人： International Business Machines Corporation

发明人： Goetschel, Christian J.

IPC分类号： H03K19/013 ,  H03K19/088

CPC分类号： H03K17/0422 ,  H03K19/013

摘要： The present invention describes a unique so-called transistor/transistor logic (TTL) arrangement which uses a diode-resistor network (20, 23) to develop a stable clamping reference voltage for the open collector circuit portion of the TTL arrangement. The open collector circuit of the present invention basically uses an open collector output transistor (10) whose base is coupled through a resistor network (21, 22) to a second transistor (15) so that the second transistor (15) will go into saturation so as to direct a reference current through the diode-resistance network (20, 23) and thus prevent the open collector output transistor (10) from saturating.

摘要翻译： 本发明描述了一种独特的所谓的晶体管/晶体管逻辑（TTL）布置，其使用二极管 - 电阻网络（20,23）为TTL布置的集电极开路部分开发稳定的钳位参考电压。 本发明的开路集电极电路基本上采用开路集电极输出晶体管（10），其基极通过电阻网络（21,22）耦合到第二晶体管（15），使得第二晶体管（15）将进入饱和状态 以引导参考电流通过二极管电阻网络（20,23），从而防止开路集电极输出晶体管（10）饱和。

公开(公告)号：EP0449441A1

公开(公告)日：1991-10-02

申请号：EP91301873.5

申请日：1991-03-06

申请人： International Business Machines Corporation

发明人： Jaquette, Glen Alan

IPC分类号： H03K19/018 ,  H03K19/013 ,  G05F3/22

CPC分类号： H03K17/0422 ,  G05F3/222

摘要： An antisaturation circuit (30) in which a differential input pair (21, 23) monitors the collector-base voltage of a protected transistor (9′) to detect the condition prior to the protected transistor (9′) going into saturation mode. To prevent the protected transistor (9′) from operating in the saturation mode, the differential input pair sinks a portion of the protected transistor's collector current. This reduction in collector current causes an increase in the collector voltage thus keeping the collector-base junction reverse biased and the protected transistor (9′) out of the saturation mode. This antisaturation technique does not steal base current from the protected transistor (9′), hence leaving its input impedance unaffected. This antisaturation technique is thus useful in higher performance non-linear circuits as well as in linear circuits.

摘要翻译： 一种抗饱和电路（30），其中差分输入对（21,23）监视受保护晶体管（9分钟）的集电极基极电压，以检测保护晶体管（9分钟）进入饱和模式之前的状态。 为了防止保护晶体管（9分钟）在饱和模式下工作，差分输入对吸收受保护晶体管集电极电流的一部分。 集电极电流的减小导致集电极电压的增加，从而保持集电极 - 基极结反向偏置，保护晶体管（9分钟）超出饱和模式。 这种抗饱和技术不会从受保护的晶体管（9分钟）中窃取基极电流，因此使其输入阻抗不受影响。 因此，这种抗饱和技术在更高性能的非线性电路以及线性电路中是有用的。

公开(公告)号：EP0427084A3

公开(公告)日：1991-07-10

申请号：EP90120762.1

申请日：1990-10-30

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Wilcox, Milton

IPC分类号： H02M3/07

CPC分类号： H03K17/10 ,  H02M3/07 ,  H03K17/0422

摘要： A maximum swing bipolar charge pump retains a cascode switching configuration for high breakdown. The charge pump includes a charge pump capacitor with a first plate connected to supply in the conventional manner. A first cascode-connected NPN transistor is utilized to switch the second plate of the pump capacitor to the supply. A second cascode-connected NPN transistor is utilized to switch the second plate of the pump capacitor close to ground. An additional bipolar biasing network holds the second NPN transistor out of heavy saturation when the second plate of the pump capacitor is switched close to ground, thereby preserving fast turn-off time and maximum voltage swing with the constraint of a bipolar cascode configuration.

公开(公告)号：EP0114540B1

公开(公告)日：1986-08-27

申请号：EP83402351.7

申请日：1983-12-06

申请人： TELEMECANIQUE

发明人： Gaude, Maurice

IPC分类号： H03K17/04 ,  H03K17/08

CPC分类号： H03K17/04126 ,  H03K17/0422 ,  H03K17/0826 ,  H03K17/601

公开(公告)号：EP1317793A1

公开(公告)日：2003-06-11

申请号：EP01974027.3

申请日：2001-09-06

申请人： Infineon Technologies AG

发明人： AUSSERLECHNER, Udo

IPC分类号： H02M3/07

CPC分类号： H03K17/667 ,  H02M3/07 ,  H03K17/0422 ,  H03K17/063

摘要： A charge pump circuit for production of an output voltage (UA), greater than a supply voltage (VDD) for the charge pump circuit is disclosed, comprising a first and a second charge store (C1, C2), which are controlled in such a way and connected to each other such that the output voltage (UA) is higher than the voltage limit of the individual capacitors (C1, C2). Switching means (T2, T3) are alternately switched on and off depending on a high frequency signal (CLK) so that during a first clock phase the first charge store (C1) is charged up and during a second clock phase the charge in the first charge store is transferred to the second charge store (C2). The charge pump circuit is characterised in low current requirement, high output voltages (UA) and generation of an output voltage (UA) with low internal resistance. In a preferred embodiment the switching means comprise bipolar transistors, fitted with anti-saturation circuits (AS1, AS2).

公开(公告)号：EP0427084B1

公开(公告)日：1994-12-14

申请号：EP90120762.1

申请日：1990-10-30

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Wilcox, Milton

IPC分类号： H02M3/07

CPC分类号： H03K17/10 ,  H02M3/07 ,  H03K17/0422

公开(公告)号：EP0311605B1

公开(公告)日：1993-03-31

申请号：EP87902434.7

申请日：1987-05-09

申请人： ROBERT BOSCH GMBH

发明人： FLOHRS, Peter ,  HEYKE, Klaus ,  MICHEL, Hartmut ,  NELLE, Ulrich

IPC分类号： H03K17/04 ,  H01L27/08

CPC分类号： H03K17/0422 ,  H01L27/0821

摘要： A transistor arrangement with a power transistor (T1, T2) which can be disconnected at a particularly high speed. For this, a discharging transistor (T4) is provided which, after the base current of the output transistor has been switched off, discharges the charge carriers from the base area of the output transistor. Behaviour is improved by a sequential transistor (T3), whose intrinsic storage capacity of charge carriers on the base is exploited. Furthermore a description is given of a diffusion structure particularly suited for monolithic integration.

公开(公告)号：EP0427084A2

公开(公告)日：1991-05-15

申请号：EP90120762.1

申请日：1990-10-30

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Wilcox, Milton

IPC分类号： H02M3/07

CPC分类号： H03K17/10 ,  H02M3/07 ,  H03K17/0422

摘要： A maximum swing bipolar charge pump retains a cascode switching configuration for high breakdown. The charge pump includes a charge pump capacitor with a first plate connected to supply in the conventional manner. A first cascode-connected NPN transistor is utilized to switch the second plate of the pump capacitor to the supply. A second cascode-connected NPN transistor is utilized to switch the second plate of the pump capacitor close to ground. An additional bipolar biasing network holds the second NPN transistor out of heavy saturation when the second plate of the pump capacitor is switched close to ground, thereby preserving fast turn-off time and maximum voltage swing with the constraint of a bipolar cascode configuration.

摘要翻译： 最大摆动双极电荷泵保持共源共栅开关配置，用于高击穿。 电荷泵包括电荷泵电容器，其具有以常规方式供应的第一板。 利用第一个共源共栅NPN晶体管将泵电容器的第二板切换到电源。 利用第二共源共栅NPN晶体管将泵电容器的第二板接近地开关。 当泵电容器的第二板切换到接地时，附加的双极性偏压网络将第二NPN晶体管保持在饱和饱和状态，从而在双极共源共栅配置的约束下保持快速关断时间和最大电压摆幅。