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    METHOD OF PLASMA ETCHING
    5.
    发明公开
    METHOD OF PLASMA ETCHING 审中-公开

    公开(公告)号：EP4391023A1

    公开(公告)日：2024-06-26

    申请号：EP23193297.1

    申请日：2023-08-24

    申请人： SPTS Technologies Limited

    发明人： KAZEMI, Samira Binte

    IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/306

    CPC分类号： H01L21/31122 ,  H10N30/082 ,  H01L21/30621

    摘要： According to the invention there is provided a method of plasma etching an additive-containing aluminium nitride film, the additive-containing aluminium nitride film containing an additive element selected from scandium (Sc), yttrium (Y) or erbium (Er), the method comprising the steps of:
    placing a workpiece upon a substrate support within a plasma chamber, the workpiece comprising a substrate having an additive-containing aluminium nitride film deposited thereon and a mask disposed upon the additive-containing aluminium nitride film which defines at least one trench;
    introducing BCl3 gas into the chamber with a BCl3 flow rate in sccm;
    introducing Cl2 gas into the chamber with a Cl2 flow rate in sccm;
    introducing an inert diluent gas into the chamber with an inert diluent gas flow rate in sccm; and
    establishing a plasma within the chamber to plasma etch the additive-containing aluminium nitride film exposed within the trench;
    wherein a ratio of the inert diluent gas flow rate to the sum of the BCl3 and Cl2 flow rates is in the range 0.45:1 to 0.75:1 and a ratio of the BCl3 flow rate to the Cl2 flow rate is in the range 0.75:1 to 1.25:1.