摘要:
A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of [mu]m. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece.
摘要:
The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.
摘要:
Es wird ein Salzbad beschrieben auf der Basis von Alkali-und/oder Erdalkalihalogeniden, mit dem sich stromlos haftfeste und verschleißfeste Boridschichten auf metallischen Werkstoffen erzeugen lassen. Dieses Bad enthält Bormonofluorid oder Verbindungen, aus denen sich intermediär Bormonofluorid bildet. Vorzugsweise benutzt man Salzbäder mit 30-60% BaCl, 10-25% NaCl, 1-20% Boroxid oder Borat, 10-30% NaF und 1-15% B 4 C.