摘要:
In a high frequency plasma generation apparatus used in a reactive ion etching apparatus, an ion shower apparatus, a sputter apparatus, etc. for fabricating thin films or semiconductor devices for which fine patterning process is required, electrical breakdown is apt to be provoked at the surface of a high frequency coil (8), because the high frequency coil (8) is usually inserted in a plasma. In order to remove this drawback, according to this invention, the high frequency coil (8) is disposed in the plasma production chamber (1) at the neighborhood of the cylindrical side wall (20), and thus a plasma confinment domain (12) is formed inside of this high frequency coil (8) by means of a magnetic field production means (3) which generates a multi-cusp magnetic field so that the plasma confinement domain (12) is separated from the high frequency coil (8). In this way electrical breakdown on the surface of the high frequency coil (8) is prevented and thus the apparatus according to this invention can work stably for a long time.
摘要:
Methods, apparatuses, devices, and systems for creating, controlling, conducting, and optimizing fusion activities of nuclei. The controlled fusion activities cover a spectrum of reactions from aneutronic, fusion reactions that produce essentially no neutrons, to neutronic, fusion reactions that produce substantial numbers of neutrons.
摘要:
A magnetic mirror machine (200), comprises a first inner coil (104) arranged to carry a current in a first direction; and a second inner coil (105) offset in an axial direction from said first inner coil (104) and arranged to carry a current in a second direction opposite to said first direction. The mirror machine (200) further comprises a first outer coil (210) located radially outside said first inner coil (104) and arranged to carry a current in said second direction; and a second outer coil (212) located radially outside said second inner coil (105) and arranged to carry a current in said first direction.
摘要:
The charged particles comprise electrons and positive ions. A magnetic field having only point cusps is used to confine injected electrons and so to generate a negative potential well (600). Positive ions injected into the negative potential well are trapped therein. The preferred means for generating the magnetic field is current-carrying elements (800) arranged at positions corresponding to the edges of any of several truncated regular polyhedrons.
摘要:
Production de plasmas. Le procédé selon l'invention est caractérisé en ce qu'on: procède, par ondes hyperfréquences, à l'excitation d'un milieu gazeux dans une enceinte, maintient ce plasma dans l'enceinte au moins par confinement magnétique multipolaire, met en oeuvre des moyens propres à entretenir dans l'enceinte une pression absolue comprise entre 10 -6 et 10-' Torrs. Application à la microélectronique.
摘要:
Plasma apparatus comprises a vacuum vessel, a device for creating an open-ended magnetic field containing a plasma, a device for controlling a potential of a space in which the plasma is confined, a plurality of electrostatic plugs disposed at the open-ended portions of the magnetic field. At least one of the electrostatic plugs comprises a limiter attached to the vacuum vessel, provided with an inner hollow portion and arranged so as to confine the plasma, an anode electrode disposed at the open-ended portion and provided with an inner hollow portion extending along a direction of the open-ended magnetic field, a cathode electrode disposed with space from the anode electrode on the side opposite to the limiter and coaxially with the anode .electrode and the limiter, a control electrode passing through a through hole provided for the cathode electrode and extending into the hollow portion of the anode electrode, and electric power applying means so that potentials are applied to the anode electrode, the control electrode, the limiter, and the cathode electrode so as to have higher magnitudes in the stated order.
摘要:
A magnetic mirror machine for plasma confinement comprises a plurality of electromagnetic coils each circularly symmetric with respect to a common symmetry axis and disposed along said symmetry axis for creating an open-field-line plasma confinement area limited by a plurality of mirror areas of increased magnetic flux density relative to a central area of said plasma confinement area, wherein said magnetic mirror machine further comprises at least one further electromagnetic coil, wherein said further electromagnetic coil crosses a plane of an electromagnetic coil of said plurality of electromagnetic coils through said electromagnetic coil.