公开(公告)号：EP0671761A1

公开(公告)日：1995-09-13

申请号：EP94900273.7

申请日：1993-11-17

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： H01L21/316

CPC分类号： H01L21/31662 ,  C23C8/10 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02238 ,  H01L21/02255

摘要： The present invention aims at providing an apparatus for and a method of forming low-temperature oxide films, which are capable of forming an oxide film at a low temperature and preventing the diffusion of impurities from the outside. The apparatus for forming an oxide film at a low temperature is characterized in that it has an oxidation furnace provided with a gas supply port and a gas discharge port, a heater for heating the oxidation furnace to a predetermined temperature, and a gas supply system disposed upstream of the oxidation furnace and provided with a means for adding an arbitrary quantity of water or a means for generating an arbitrary quantity of water.

公开(公告)号：EP0656650A1

公开(公告)日：1995-06-07

申请号：EP94918543.3

申请日：1994-06-21

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： H01L21/66

CPC分类号： G01R31/2858 ,  G01R27/02 ,  G01R31/2812

摘要： This invention aims at providing a method of evaluating a current-driven conductive material such as wiring conductor, in which the resistance to electromigration and the resistance to stress migration are independently measured in a short time. A first current is supplied to a conductor to measure its resistance value, and a second current larger than the first current is supplied for a predetermined period to cause its physical properties to change. Thereafter, the resistance value of the conductor is again measured by using the first current. This procedure is repeated for accelerated evaluation of reliability of the conductor. In this method, the duration of the second current is sufficiently smaller than that of the first current so that electromigration may be measured within a temperature rise of 50°C. To measure stress migration, on the other hand, the second current is set so that electromigration may not occur, and it is fed at intervals less than 10 ms so that the temperature rise may exceed 100°C.

摘要翻译： 本发明的目的在于提供一种在短时间内独立地测量电流驱动导电材料（例如布线导体）的方法，其中电迁移和耐应力迁移的抵抗力是独立测量的。 向导体提供第一电流以测量其电阻值，并且将大于第一电流的第二电流提供预定时间段以使其物理性质发生变化。 此后，通过使用第一电流再次测量导体的电阻值。 为了加速评估导体的可靠性，重复该过程。 在该方法中，第二电流的持续时间足够小于第一电流的持续时间，从而可以在50℃的温度升高期间测量电迁移。另一方面，为了测量应力迁移，将第二电流设置为 可能不会发生电迁移，并且以小于10 ms的间隔进给，以使温度升高可能超过100℃。

公开(公告)号：EP0642871A1

公开(公告)日：1995-03-15

申请号：EP93910412.1

申请日：1993-05-28

申请人： OSAKA SANSO KOGYO LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NAKAMURA, Masakazu

IPC分类号： B23K9/00 ,  B23K9/16 ,  C23C8/14

CPC分类号： B23K35/383 ,  C23C8/10

摘要： This invention provides a welding method capable of forming an oxide passivation film having corrosion resistance and an extremely small emission quantity of an outgas during welding at a weld portion and portions nearby, and a process apparatus requiring an ultrahigh-clean atmosphere. A back-seal gas comprising an inert gas contaning 1 ppb to 50 ppm of oxygen gas in caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion. In a process apparatus using welding for installing the apparatus, a back-seal gas comprising an inert gas containing 1 ppb to 50 ppm of oxygen gas is caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion.

摘要翻译： 本发明提供一种焊接方法，其能够在焊接部分和焊接部分附近的过程中形成的钝化膜具有耐腐蚀性和在脱气的极小发光量的氧化物，并且在超高洁净的空气需要处理设备。 背面密封气体包含惰性气体contaning 1ppb至50ppm的氧气引起在焊接过程中流动，并且作为主要成分的焊接部的表面上形成为氧化物钝化膜，包括氧化铬。 在使用焊接用于安装装置的处理装置，背面密封气体包含1ppb至50ppm的氧气的惰性气体，其包含引起在焊接过程中流动并氧化物钝化膜包含铬氧化物为主要成分是 形成的焊接部的表面上。

公开(公告)号：EP0386257B1

公开(公告)日：1994-10-26

申请号：EP89909243.1

申请日：1989-08-14

申请人： OSAKA SANSO KOGYO KABUSHIKI-KAISYA ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  SUGIYAMA, Kazuhiko Sanraifu-nagamachi 303 ,  NAKAHARA, Fumio Sanken-haitsu-koiwa 101 ,  MIZOKAMI, Satoshi Saiwai-Gardenmansion 212

IPC分类号： C23C8/10 ,  C23C8/14 ,  C23C8/18

CPC分类号： C23C8/10

摘要： This invention relates to a metal oxidation apparatus for forming a passivation film on the surface of a bent pipe of a metal to be oxidized having a bent portion such as a stainless steel pipe. The apparatus includes an oxidation furnace, a gas inlet for introducing a gas into the oxidation furnace, an exhaust port for discharging the gas from inside the oxidation furnace, a heater for heating the oxidation furnace to a predetermined temperature and a holder for fixing a tubular metal to be oxidized having a bent portion inside the oxidation furnace, the holder serving also as a connection joint. The inlet is disposed in such a manner as to come into contact with one of the ends of the bent metal pipe and the exhaust port is disposed in such a manner as to come into contact with the other end. The invention is characterized in that the bent metal pipe to be oxidized is heated and oxidized in a dry oxidizing atmosphere while a gas is being passed through the inside of the bent metal pipe to be oxidized.

摘要翻译： 金属氧化装置技术领域本发明涉及在不锈钢管等具有弯曲部的被氧化金属的弯曲管的表面上形成钝化膜的金属氧化装置。 该设备包括氧化炉，用于将气体引入氧化炉的气体入口，用于从氧化炉内排出气体的排气口，用于将氧化炉加热到预定温度的加热器以及用于将管 在氧化炉内具有弯曲部分的待氧化金属，该保持器也用作连接接头。 入口以与弯曲的金属管的一个端部接触的方式设置，并且排气口布置成与另一端接触。 本发明的特征在于，待氧化的弯曲金属管在干燥氧化气氛中被加热和氧化，同时气体通过弯曲金属管的内部被氧化。

公开(公告)号：EP0615790A1

公开(公告)日：1994-09-21

申请号：EP92922998.7

申请日：1992-11-09

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： B08B3/00 ,  H01L21/00 ,  C02F1/04

CPC分类号： H01L21/67057 ,  B08B3/02 ,  B08B2230/01 ,  C02F1/045 ,  H01L21/6704 ,  Y10S210/90

摘要： An object of the present invention is to provide a method of washing a substrate, wherein even traces of impurities in minute and high-aspect-ratio trenches or holes can be washed and removed free from contamination by washing solution and a system and a method for producing ultrapure water, capable of producing ultrasuper pure water for use in the washing. The present invention is characterized in that, at the intermediate portions of a piping (7) for supplying a predetermined ultrapure water to a use point, there are provided: a first steam generating means (1) for heating a first ultrapure water for conversion into a first steam; a steam heating means (3) for further heating the first steam for conversion into a second steam higher in temperature than the first steam; and a cooling means (5) for cooling the second steam for conversion into a second ultrapure water.

摘要翻译： 本发明的一个目的是提供一种清洗一基片，worin即使在分钟和高纵横比的沟槽或孔的杂质的迹线的方法，可以洗涤，洗涤溶液的系统和一种方法无污染物去除 生产超纯水，能生产的超超纯净水在清洗使用。 本发明是在供给规定超纯水至使用点为特征的，在管道（7）的中间部，设置有：第一蒸汽发生装置（1）用于加热第一超纯水以转换成 第一蒸汽; 蒸汽加热装置（3），用于在温度比所述第一蒸汽进一步加热所述第一蒸汽用于转换成一个第二蒸汽更高; 和冷却装置（5），用于冷却用于转换的第二蒸汽进入第二超纯水。

公开(公告)号：EP0592671A1

公开(公告)日：1994-04-20

申请号：EP92914382.4

申请日：1992-07-02

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro

IPC分类号： H01L21/304

CPC分类号： H01L21/02052

摘要： A silicon wafer of a diameter larger than eight inches, whose surfaces are not roughed by cleaning with NH₄OH-H₂O₂, and on which devices of higher performances can be fabricated. A thermal oxidation film is formed on the entire surface of a silicon wafer of a diameter larger than eight inches which is prepared by slicing an ingot made through a pulling method. After removing all the thermal oxidation film of the silicon wafer, the whole surface of the wafer is cleaned with NH₄OH-H₂O₂.

摘要翻译： 直径大于8英寸的硅晶片，其表面不被NH 4 OH-H 2 O 2清洗而被粗糙化，并且可以制造具有更高性能的器件。 在直径大于8英寸的硅晶片的整个表面上形成热氧化膜，其通过切割通过牵引方法制成的锭而制备。 在除去硅晶片的所有热氧化膜之后，用NH 4 OH-H 2 O 2清洗晶片的整个表面。

公开(公告)号：EP0509097A1

公开(公告)日：1992-10-21

申请号：EP91901639.4

申请日：1991-01-07

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KAWAKAMI, Michiya ,  YAGI, Yasuyuki ,  OHWADA, Tohru ,  TAKAHARA, Yasushi

IPC分类号： H01L21/304 ,  H01L21/00

CPC分类号： H01L21/02052 ,  B08B3/02 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/6715 ,  Y10S134/902 ,  Y10S239/19

摘要： A method and an apparatus for high-temperature high-pressure washing employed in the step of washing in the electronic industries such as chiefly semi-conductor industries and in the industries of optical devices. The high-temperature high-pressure washing apparatus has a compression-feed pump, a heating device, nozzles and piping, to spout high-temperature high-pressure water from nozzles onto materials to be washed. The apparatus has the function of spouting very pure water having high temperature and high pressure from the nozzle, onto the materials to be washed. The very pure water used has a resistivity greater than 17.0 MΩ.cm at 25 °C.

摘要翻译： 在电子工业如半导体行业和光学器件行业中洗涤步骤中采用的高温高压清洗方法和装置。 高温高压洗涤装置具有压缩供给泵，加热装置，喷嘴和管道，以将来自喷嘴的高温高压水喷射到要洗涤的材料上。 该装置具有将来自喷嘴的高温高压的非常纯净的水喷射到要洗涤的材料上的功能。 所使用的非常纯净的水在25℃时的电阻率大于17.0M欧米茄.cm

公开(公告)号：EP0471845A1

公开(公告)日：1992-02-26

申请号：EP90907409.8

申请日：1990-05-07

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  MORITA, Mizuho

IPC分类号： H01L21/316

CPC分类号： H01L21/31683 ,  H01L21/31654 ,  Y10S438/903

摘要： A method of forming an oxide film comprising at least: a first step of forming an oxide film on the surface of a substrate by bringing a solution of oxygen and/or a solution of oxygen-containing molecules into contact with the surface of the substrate on which the oxygen film is to be formed; and a second step of strengthening the bonding of oxygen and the atoms constituting the surface of the substrate in the oxide film by heat-treating the oxide film at a temperature higher than 20°C in a gas phase of oxygen, molecules containing oxygen, or inert gas alone, or a mixture of two or more of them.

摘要翻译： 一种形成氧化膜的方法，至少包括：通过使氧和/或含氧分子的溶液与衬底的表面接触而在衬底的表面上形成氧化膜的第一步骤 要形成氧气膜; 以及第二步骤，通过在氧气的气相，氧气分子中，在高于20℃的温度下对氧化膜进行热处理，来加强氧和构成氧化膜表面的原子的键合，或者 单独的惰性气体，或它们中的两种或更多种的混合物。

公开(公告)号：EP0471844A1

公开(公告)日：1992-02-26

申请号：EP90907402.3

申请日：1990-05-07

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  MORITA, Mizuho

IPC分类号： H01L21/316

CPC分类号： H01L21/31654 ,  H01L29/51

摘要： A silicon oxide film in which the peak bond energy of an Si 2p of a silicon-oxygen bond is greater than that of an Si 2p3/2 of a silicon-silicon bond by more than 4.1 eV in X-ray photoelectron spectroscopy.

摘要翻译： 在X射线光电子能谱中，硅 - 氧键的Si2p的峰值键能比硅 - 硅键的Si2p3 / 2的峰值键合能大于4.1eV的氧化硅膜。

公开(公告)号：EP0379594A1

公开(公告)日：1990-08-01

申请号：EP89908265.5

申请日：1989-07-07

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  NAKAHARA,Fumio ,  SATOH,Tuyosi ,  UMEDA, Masaru

IPC分类号： C23C16/44 ,  C23C16/52 ,  C23C14/22 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31

CPC分类号： B08B9/0325 ,  C23C14/564 ,  C23C16/4402 ,  C23C16/4404

摘要： A gas supply pipeline system for process equipment, adapted to supply at least two kinds of process gas, and provided with at least two valves (135, 136, 139, 140) installed in each of independent flow passages formed between process gas supply pipelines and a purge gas supply pipe line, and at least two valves (137, 138, 141, 142) installed in each of a plurality of flow passages formed between the process gas supply pipelines and the pipelines in the process equipment. Each of the process gas supply pipelines and each of the pipelines in the process equipment can be purged and vacuumed by at least two valves in each of these flow passages that are opened or closed independently, and the stagnation of a gas in the pipelines not in use can be prevented by introducing a purge gas constantly thereinto.

摘要翻译： 供气管道系统用于加工过程。 用于提供至少两种处理气体，并且在过程和气体供应管线之间形成的独立流动通道中安装两个阀，以及安装在过程气体供应管线和管道中形成的每个流动通道中的阀门 。