公开(公告)号：EP0642871A1

公开(公告)日：1995-03-15

申请号：EP93910412.1

申请日：1993-05-28

申请人： OSAKA SANSO KOGYO LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NAKAMURA, Masakazu

IPC分类号： B23K9/00 ,  B23K9/16 ,  C23C8/14

CPC分类号： B23K35/383 ,  C23C8/10

摘要： This invention provides a welding method capable of forming an oxide passivation film having corrosion resistance and an extremely small emission quantity of an outgas during welding at a weld portion and portions nearby, and a process apparatus requiring an ultrahigh-clean atmosphere. A back-seal gas comprising an inert gas contaning 1 ppb to 50 ppm of oxygen gas in caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion. In a process apparatus using welding for installing the apparatus, a back-seal gas comprising an inert gas containing 1 ppb to 50 ppm of oxygen gas is caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion.

摘要翻译： 本发明提供一种焊接方法，其能够在焊接部分和焊接部分附近的过程中形成的钝化膜具有耐腐蚀性和在脱气的极小发光量的氧化物，并且在超高洁净的空气需要处理设备。 背面密封气体包含惰性气体contaning 1ppb至50ppm的氧气引起在焊接过程中流动，并且作为主要成分的焊接部的表面上形成为氧化物钝化膜，包括氧化铬。 在使用焊接用于安装装置的处理装置，背面密封气体包含1ppb至50ppm的氧气的惰性气体，其包含引起在焊接过程中流动并氧化物钝化膜包含铬氧化物为主要成分是 形成的焊接部的表面上。

公开(公告)号：EP0642872A1

公开(公告)日：1995-03-15

申请号：EP93910411.3

申请日：1993-05-28

申请人： OSAKA SANSO KOGYO LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NAKAMURA, Masakazu

IPC分类号： B23K9/23

CPC分类号： B23K9/325 ,  B23K2201/06

摘要： This invention aims at providing a welding method capable of preventing generation and re-deposition of metallic fumes a: portions near the surface of a weld portion and capable of reducing a deposition quantity of chromium carbides. The present invention further aims at providing a welding stainless material free from deposition of fumes, a semiconductor fabrication apparatus, an ultra-pure water feeding apparatus and an ultrahigh-pure gas feeding piping system. In a method of connecting a plurality of stainless members by fusing and solidifying predetermined portions (weld portions) of these stainless materials, the welding method of this invention is characterized in that heat input quantity to the weld portions is set below 600 joule/cm. Furthermore, the welding method is characterized in that the welding rate is set to below 20 cm/min. The stainless material is characterized in that when the welded body is washed with ultra-pure water (at flow rate of 15 l/hr for 6 hours) after welding, the sum of elution quantities of Fe, Ni, Cr and Mn is not greater than 0.1 µg per cm of the weld length.

摘要翻译： 本发明的目的在于提供一种能够防止产生和金属再沉积的焊接方法烟气的：部分的焊接部的表面附近，并且能够减少碳化铬的沉积量的。 本发明进一步目的在于提供一种焊接不锈钢材料从烟气，半导体制造装置的沉积自由，以超纯水供给装置以及超高纯气体供给配管系统，在通过连接不锈钢部件的多个的方法 熔合和固化的论文不锈钢材料的预定部分（焊接部分），本发明的焊接方法的特征在于DASS热输入量与焊接部被设定低于600焦耳/平方厘米。 进一步，该焊接方法的特征在于，所做的焊接速度被设定为低于20厘米/分钟。 不锈钢材料的特征在于DASS当焊接体在焊接之后用超纯水（以15升/小时的流速进行6小时），铁，镍，铬和锰的溶出量的总和是不大于 大于每焊缝长度的0.1厘米亩克。

公开(公告)号：EP1439571B1

公开(公告)日：2016-09-14

申请号：EP02775374.8

申请日：2002-10-18

申请人： Goto, Naohisa ,  Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： GOTO, Naohisa ,  OHMI, Tadahiro ,  HIRAYAMA, Masaki ,  GOTO, Tetsuya

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192

公开(公告)号：EP1265279B1

公开(公告)日：2009-10-14

申请号：EP01912317.3

申请日：2001-03-13

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  SUGAWA, Shigetoshi, Dept of Electronic Engineering

IPC分类号： H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

公开(公告)号：EP1486714B1

公开(公告)日：2008-08-27

申请号：EP02705285.1

申请日：2002-03-18

申请人： Fujikin Incorporated ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  YAMAJI, Michio Fujikin Incorporated ,  NOJIMA, Shinya Fujikin Incorporated ,  KATSUMI, Yukito Fujikin Incorporated ,  SHINOHARA, Tsutomu Fujikin Incorporated

IPC分类号： F16L19/00 ,  F16J15/10

CPC分类号： F16J15/02 ,  F16J15/062 ,  F16J15/104 ,  F16L19/00 ,  F16L19/0212 ,  F16L19/0218 ,  F16L25/0018 ,  F16L27/082 ,  F16L27/0828 ,  Y10S277/925 ,  Y10S285/917

摘要： At the abutting end faces of coupling members (1, 2), annular recesses (3, 4) having annular protrusions (5, 6) on the bottom face are provided while surrounding fluid channels (1a, 2a). A gasket (10) comprises a seal part (11) interposed between the protrusions (5, 6) of the coupling members (1, 2) while having an outside diameter smaller than the diameter of the annular recesses (3, 4), and a guide part (12) disposed on the outside of the seal part (11) while having an outside diameter being fitted in the annular recesses (3, 4). When the coupling members (1, 2) are fastened properly, the end faces thereof abut each other. An annular groove (14) is made in the outer circumference of the seal part (11) and a snap ring (13) fitted in the annular groove (14) couples the seal part (11) and the guide part (12).

公开(公告)号：EP1126347B1

公开(公告)日：2007-09-12

申请号：EP00948265.4

申请日：2000-07-27

申请人： TOKYO ELECTRON LIMITED ,  FUJIKIN INCORPORATED ,  Ohmi, Tadahiro ,  Iida, Seiichi

发明人： OHMI, Tadahiro ,  IIDA, Seiichi ,  KAGATSUME, Satoshi, Tokyo Electron Yamanashi Ltd. ,  HIROSE, Jun, Tokyo Electron Yamanashi Ltd. ,  FUKASAWA, Kazuo, Tokyo Electron Yamanashi Ltd. ,  KOIZUMI, Hiroshi, Tokyo Electron Yamanashi Ltd. ,  NAGAOKA, Hideki, Tokyo Electron Yamanashi Ltd. ,  UNO, Tomio, Fujikin Incorporated ,  NISHINO, Kouji, Fujikin Incorporated ,  IKEDA, Nobukazu, Fujikin Incorporated ,  DOHI, Ryousuke, Fujikin Incorporated ,  IDETA, Eiji, Fujikin Incorporated

IPC分类号： G05B23/02 ,  F16K17/22 ,  G05D7/06 ,  G01D21/00

CPC分类号： G05B23/0235 ,  G05B23/0256 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326

摘要： A method for detecting abnormal flow rate by easily detecting an obstruction of an orifice while a fluid pressure flow rate controller using an orifice is controlling the flow rate. The method uses a flow rate controller (FCS) so as to calculate the flow rate Qc on the downstream side when the upstream-side pressure P1 is maintained at a value about twice or more the downstream-side pressure P2 from Qc=KP1 (K: constant) and to control the operation of a control valve (CV) according to a signal Qy representing the difference between the calculated flow rate Qc and a preset flow rate Qs. A testing circuit or flow rate setting circuit provided separately outputs a testing signal ΔQs having a testing amplitude V0 to the control valve (CV). The pressure amplitude V of a pressure variation ΔP1 of the upstream-side pressure P1 occurring in response to the opening/closing of the control valve (CV) is measured. When the pressure amplitude V decreases below a limit amplitude Vt, the obstruction of the orifice is announced, thus implementing the method. If the testing signal ΔQs is superimposed on a steady-state preset flow rate signal Qs0 and outputted together from the testing circuit or the flow rate setting circuit to the control valve (CV), an abnormal flow rate can be detected while controlling the flow rate by using the steady-state preset flow rate signal Qs0.

公开(公告)号：EP1707858A1

公开(公告)日：2006-10-04

申请号：EP05703504.0

申请日：2005-01-13

申请人： FUJIKIN INCORPORATED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  MINAMI, Yukio ,  TUBOTA, Kenji ,  SHINOHARA, Tsutomu ,  YAMAJI, Michio ,  IKEDA, Nobukazu ,  MORIMOTO, Akihiro ,  KAWADA, Koji ,  NARIAI, Toshiro

IPC分类号： F16K51/00

CPC分类号： F16K51/02 ,  Y10T137/6606 ,  Y10T137/7043 ,  Y10T137/7062

摘要： Summary
The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance.
With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S 5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S 4 , which is hermetically fitted to the lower vacuum jacket S 5 and with its lower face made open.

摘要翻译： 发明内容本发明提供一种真空热绝缘阀，其可以在气体供应系统或排气系统中在高温下使用，并且由于其优异的绝热性能，其尺寸可以做得基本上小而紧凑。 上述真空保温箱S由具有配备有阀体和致动器的阀以及容纳该阀的真空保温箱的真空保温箱S由方形的下部真空保护套S5形成， 一侧为圆柱形的真空保温管接收部分J，其上表面敞开;以及方形的上部真空套S4，其密封地装配在下部真空套S5上并且其下表面敞开。

公开(公告)号：EP1300619B1

公开(公告)日：2006-08-02

申请号：EP00935552.0

申请日：2000-06-05

申请人： FUJIKIN INCORPORATED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  NISHINO, Kouji Fujikin Incorporated ,  IKEDA, Nobukazu Fujikin Incorporated ,  YAMAJI, Michio Fujikin Incorporated ,  DOHI, Ryousuke Fujikin Incorporated ,  IDETA, Eiji Fujikin Incorporated ,  HIROSE, Takashi Fujikin Incorporated

IPC分类号： F16K47/08

CPC分类号： F16K25/005 ,  F16K7/14 ,  F16K7/16 ,  F16K27/00 ,  H04W4/90 ,  H04W48/12 ,  H04W74/006 ,  H04W74/0833 ,  H04W76/50

摘要： It is an object of the present invention to provide at low costs a valve with an integral orifice for use in a gas feeding equipment provided with a pressure-type flow volume control device to be employed for manufacturing of semi-conductors and chemical goods. The valve with an integral orifice has the excellent flow rate control characteristics by improving the processing accuracy of the orifice and preventing the distortion of the orifice at the time of assembling. To realize the objects of the present invention, the main part of the valve with an integral orifice comprises a valve main body made of heat-resisting materials having a gas inflow passage in communication with a valve chamber with an upper open end and a gas outflow passage, a synthetic resin made valve seat body formed in the valve chamber and having a gas outflow passage in communication with the gas outflow passage of the aforementioned valve main body and a valve seat, an orifice disc made of heat-resisting materials removably installed in the gas outflow passage of the valve seat body, and an orifice formed in the orifice disc to reduce the gas outflow passage of the valve seat body; wherein the orifice is formed in the stainless steel made orifice disc in advance and the metal made orifice disc with the orifice formed by a separate processing and the synthetic resin made valve seat body are removably assembled, wherein the orifice disc and the synthetic resin made valve seat body are fixed airtight to the valve main body by pressing the valve seat body via the metal inner disc.

公开(公告)号：EP1681715A1

公开(公告)日：2006-07-19

申请号：EP04818177.0

申请日：2004-11-02

申请人： OHMI, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  NOZAWA, Toshihisa, c/o TOKYO ELECTRON AT LIMITED ,  MORITA, Osamu, c/o TOKYO ELECTRON AT LIMITED ,  YUASA, Tamaki, c/o TOKYO ELECTRON AT LIMITED ,  KOTANI, Koji, c/o TOKYO ELECTRON AT LIMITED

IPC分类号： H01L21/31 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32724

摘要： The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part.
Therefore, used in the present invention is a plasma processor having a processing vessel having a holder holding a substrate to be processed, a microwave antenna provided on the processing vessel so as to oppose the substrate to be processed, and a processing gas supply part provided between the substrate to be processed on the holder and the microwave antenna so as to oppose the substrate to be processed, characterized in that the process gas supply part has multiple first openings through which plasma formed in the processing vessel passes, a process gas channel connectable to a process gas source, multiple second openings communicating with the process gas channel, and a cooling medium channel through which a cooling medium cooling the process gas supply part flows, wherein the cooling medium includes mist.

摘要翻译： 本发明的目的在于提高等离子体处理装置的处理气体供给部的冷却效率，抑制处理气体供给部的温度上升。 因此，本发明中使用的是具有处理容器的等离子体处理装置，该处理容器具有：保持被处理基板的保持架;以与处理对象基板相对的方式设置在处理容器上的微波天线;设置处理气体供给部 在所述支架上的被加工基板与所述微波天线之间，与所述被处理基板相对，其特征在于，所述处理气体供给部具有多个供所述处理容器内形成的等离子体通过的第一开口部，能够连接处理气体流路 其特征在于，在处理气体源具有与所述处理气体流路连通的多个第二开口以及冷却所述处理气体供给部的冷却介质流动的冷却介质流路，所述冷却介质包含雾。

公开(公告)号：EP0889515B1

公开(公告)日：2006-06-28

申请号：EP97912528.3

申请日：1997-11-21

申请人： Taiyo Nippon Sanso Corporation ,  Toda, Masayuki ,  OHMI, Tadahiro

发明人： TODA, Masayuki ,  OHMI, Tadahiro ,  ISHIHARA, Yoshio, Nippon Sanso Corporation

IPC分类号： H01L21/00

CPC分类号： H01L21/67126 ,  H01L21/67724 ,  H01L21/67736

摘要： When a thin sheet-like substrate S is conveyed between conveying chambers (2) equipped with a processing apparatus (1) and kept in an inert gas atmosphere by using a conveying robot (30) equipped with an accommodation chamber (3) capable of accommodating the thin sheet-like substrate (S) in an inert gas atmosphere, a connection chamber (4) is interposed between the accommodation chamber (3) and the conveying chamber (2) when the thin sheet-like substrate (S) is transferred between the accommodation chamber (3) of the conveying robot (30) and the conveying chamber (2) on the side of the processing apparatus (1), and is vacuumized, and then an inert gas is introduced. Thereafter, gate valves (GV1 and GV2) of the accommodation chamber (3) and the conveying chamber (2) are opened and the thin sheet-like substrate (S) is carried in and out.