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121.
公开(公告)号:EP3176142B1
公开(公告)日:2020-04-01
申请号:EP16175558.2
申请日:2016-06-21
Applicant: STMicroelectronics S.r.l.
Inventor: CIMMINO, Angela , SALZILLO, Giovanna , CASUSCELLI, Valeria , DI MATTEO, Andrea
IPC: C04B35/468 , C01G23/00 , C04B35/622 , C04B35/624 , C04B35/632 , C04B35/634 , H01L41/187 , H01L41/318
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122.
公开(公告)号:EP3623805A1
公开(公告)日:2020-03-18
申请号:EP19195724.0
申请日:2019-09-05
Applicant: STMicroelectronics S.r.l.
Inventor: PASSANITI, Fabio , ALESSI, Enrico Rosario
IPC: G01N27/12
Abstract: The description relates to a method that comprises:
- driving (1002) a sensor by supplying to the sensor a first power value,
- receiving from the sensor a sensing signal indicative of a sensed entity,
- detecting (1004), as a function of the sensing signal from the sensor, possible onset of a sensor contamination condition,
- if such detecting fails to indicate onset of a sensor contamination condition (1004, N; 1056, N), continuing supplying (1002) to the sensor the first power value (P1),
- if such detecting indicates onset of a sensor contamination condition (1004, Y; 1056, Y), activating (1006) a protection mode.
The protection mode comprises supplying to the sensor a second power value for a protection interval, the second power value lower than the first power value and, possibly, refraining from supplying power to the sensor for a further protection interval, the further protection interval being longer than the first protection interval.-
123.
公开(公告)号:EP3623804A1
公开(公告)日:2020-03-18
申请号:EP19195691.1
申请日:2019-09-05
Applicant: STMicroelectronics S.r.l.
Inventor: PASSANITI, Mr. Fabio , ALESSI, Mr. Enrico Rosario
IPC: G01N27/12
Abstract: A method of operating a gas sensor, in particular to enhance the selectivity of a metal oxide gas sensor (10), including
applying heat by a heater (MHP, 104) to a metal oxide sensing element (106) of a gas sensor (10), varying the heat applied by said heater (MHP, 104) to said metal oxide sensing element (106) for at least a time interval (Tm), and
measuring (1006) at least an electrical resistance (R) of said metal oxide sensing element (106) of the gas sensor (10) versus said variation of the heat (I h ) applied to the metal oxide sensing element (106) for a time interval (Tm),
comparing (1008) said measurement (C) of at least the electrical resistance (R) of said metal oxide sensing element versus said variation of the heat (I h ) applied to the metal oxide sensing element (106) to a set of corresponding reference measurements (P0, P1; SS) associated to a plurality of different target gases (G1...G4) -
Such measuring step includes measuring a further sensor parameter (R D ) versus the variation of said electrical resistance (R) of said metal oxide sensing element (106) of the gas sensor (10) and said variation of the heat (I h ) applied to the metal oxide sensing element (106) obtaining a trajectory in three dimensions (C) corresponding to the variation of said sensor resistance (R), the variation of said heat (I h ) and the variation of said further sensor parameter (R D ),
said comparing operation (1008) includes comparing said trajectory in three dimensions (C) to a set of reference three-dimensional objects (SS), represented according to the same said three dimensions corresponding to the variation of said sensor resistance (R), said heat (I h ) and said further sensor parameter (R D ).-
公开(公告)号:EP3614424A1
公开(公告)日:2020-02-26
申请号:EP19192610.4
申请日:2019-08-20
Applicant: STMicroelectronics S.r.l.
Inventor: MARIANI, Mr. Simone Dario , TOIA, Mr. Fabrizio Fausto Renzo , SAMBI, Mr. Marco , PATTI, Mr. Davide Giuseppe , MORELLI, Mr. Marco , BARILLARO, Mr. Giuseppe
IPC: H01L21/762
Abstract: A technique to make silicon oxide regions (130, 150) from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions (430). Thus, the shape and profile of the oxide regions (130, 150) may be controlled by controlling the shape and profile of the P doped silicon regions.
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公开(公告)号:EP3608979A1
公开(公告)日:2020-02-12
申请号:EP19188332.1
申请日:2019-07-25
Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives , STMicroelectronics S.r.l.
Inventor: CAPPELLETTI, Paolo Giuseppe , NAVARRO, Gabriele
IPC: H01L45/00
Abstract: La présente description concerne une cellule mémoire à changement de phase (100) comprenant un empilement d'au moins une couche (114) de germanium recouverte d'une couche (116) d'un premier alliage à base de germanium, d'antimoine et de tellure.
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126.
公开(公告)号:EP3185416B1
公开(公告)日:2020-01-01
申请号:EP16175666.3
申请日:2016-06-22
Applicant: STMicroelectronics S.r.l.
Inventor: NICOLLINI, Germano , GARBARINO, Marco
IPC: H03F3/70 , H03F3/45 , G01C19/5776 , H03K5/1536
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公开(公告)号:EP2656510B1
公开(公告)日:2019-12-18
申请号:EP11799708.0
申请日:2011-12-21
Applicant: STMicroelectronics S.r.l.
Inventor: FIORELLI, Riccardo , CATALIOTTI, Antonio , DI CARA, Dario , TINE', Giovanni
IPC: H04B3/56
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128.
公开(公告)号:EP3570576A1
公开(公告)日:2019-11-20
申请号:EP19172485.5
申请日:2019-05-03
Applicant: STMicroelectronics S.r.l.
Inventor: ALFARANO, Mr. Marco , PASQUARIELLO, Mr. Giancarlo
Abstract: A method for the generation of personalized Profile Package data in integrate circuit cards,
comprising the operations of:
providing (105) a table (11a) comprising a plurality of data records (R1...R n ) corresponding to a plurality of subscriptions to be generated, each record (R 1 ...R n ) comprising a plurality of personalization fields (T1...Tm) to store different types of personalization values,
providing (110; 210) for a given subscription among said plurality of subscriptions a file (12; 22) for the Profile Package in an ASCII format comprising fields to be personalized (F 1 ...F k ...F p ) corresponding to one or more of said fields (R1...Rn) to store different types of personalization values,
converting (120; 260) said file (12a) for the Profile Package in an ASCII format into a hexadecimal code format file, in particular a DER (Distinguished Encoding Rules) format, obtaining a first hexadecimal profile (23)
selecting (115; 290) personalization values from said personalization fields (T1...Tm) in said table (11a) stored in the record (Ri) corresponding to said given subscription (50) and substituting said personalization values from said personalization fields (T1...Tm) in the corresponding fields to be personalized (F 1 ...F p ),
characterized in that said method includes
calculating (225) an offset table (25) for the given subscription indicating for each field to be personalized (F k ) a corresponding offset (O k ) in the hexadecimal profile (23),
said operation of substituting said personalization values from said personalization fields (T1...Tm) in the corresponding fields to be personalized (F 1 ...F p ) including substituting said values directly in the fields to be personalized in said file in hexadecimal format (33) at the location indicated for each personalized field by the corresponding offset in the offset table (25).-
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130.
公开(公告)号:EP3550427A1
公开(公告)日:2019-10-09
申请号:EP19164859.1
申请日:2019-03-25
Applicant: STMicroelectronics S.r.l.
Inventor: VASTANO, Mr. Pasquale , VENEROSO, Mr. Amedeo
IPC: G06F8/61 , G06F9/4401 , G06F9/445 , G06F8/658 , G06F8/654
Abstract: A method for managing the storage of an operating system in an integrated circuit card including using a primary boot loader to load a selected operating system,
subdividing an operating system in a plurality of operating system components,
associating one or more of said components in said plurality of operating system components to a descriptor indicating a version of the operating system component,
downloading said one or more components to a nonvolatile memory of the integrated circuit card,
said downloading operation including verifying if there is stored in the card an operating system component associated to a same version of the component being downloaded,
storing the component in the card if the version is different,
discarding the component from the download operation if the version is the same.
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