FLACHSTRAHLER MIT DIELEKTRISCH BEHINDERTER ENTLADUNG UND ANORDNUNG ZUR DURCHFÜHRUNG DER ELEKTRODEN IN DEN ENTLADUNGSRAUM
    12.
    发明授权
    FLACHSTRAHLER MIT DIELEKTRISCH BEHINDERTER ENTLADUNG UND ANORDNUNG ZUR DURCHFÜHRUNG DER ELEKTRODEN IN DEN ENTLADUNGSRAUM 失效
    对残障电介质放电和布置平点具体率先在放电空间

    公开(公告)号:EP0968521B1

    公开(公告)日:2009-02-11

    申请号:EP98925419.8

    申请日:1998-03-20

    IPC分类号: H01J65/00 H01J5/46 H01J5/02

    CPC分类号: H01J61/307 H01J65/046

    摘要: The invention relates to a flat spotlight (1) with a closed, gas-filled discharge vessel (2) and enclosing band-shaped electrodes separated from the discharge by a dielectric layer. The discharge vessel (2) consists of at least one base plate (5) and one cover plate (6) which are assembled by soldering (8) so as to be gastight, and optionally, also by means of an additional frame (7) placed between the cover and base plate. In addition, the band-shaped internal electrodes (3, 4) verge into passages (10, 11), and these passages verge into external power leads (12, 13) in such a way that the internal electrodes (3, 4), the passages (10, 11) and the external power leads (12, 13) are respectively conceived as functionally different sections of structures (3, 10, 12; 4, 11, 13) of the printed conductor type on the cathodes and/or anodes. At least the anodes (4) are respectively coated with a dielectric layer (17). The passages (10, 11) are, in addition, optionally covered by the soldering (8) so as to be gastight.

    SCHALTUNG ZUM SCHALTEN EINES SPANNUNGSGESTEUERTEN TRANSISTORS
    17.
    发明公开
    SCHALTUNG ZUM SCHALTEN EINES SPANNUNGSGESTEUERTEN TRANSISTORS 有权
    电路,用于切换电压控制的晶体管

    公开(公告)号:EP1987591A1

    公开(公告)日:2008-11-05

    申请号:EP07726404.2

    申请日:2007-02-16

    IPC分类号: H03K17/0412 H03K17/687

    CPC分类号: H03K17/6877 H03K17/04126

    摘要: The invention relates to a circuit which comprises a voltage-controlled transistor (T4) and is used to switch the same. Said circuit is embodied in such a way that the connection of a first transistor (T1) triggered by a control signal causes a first current to flow through a series connection (R4, T1) and starts to reload a control gate of the voltage-controlled transistor (T4). The first current passing through the series connection (R4, T1) causes a first potential shift at the connection node (V1). Said first potential shift switches on the second transistor (T2), thus causing a second current to flow through the contact gap of the second transistor (T2) into the control gate of the first transistor (T1), amplifying the first current. The increasing reloading of the control gate of the voltage-controlled transistor (T4) causes a second potential shift at the connection node (V1). The second transistor (T2) is switched off by said second potential shift, while the first transistor (T1) remains switched on and the voltage-controlled transistor (T4) is maintained in the new switching state thereof.