FILM-FORMING APPARATUS AND FILM-FORMING METHOD
    11.
    发明公开
    FILM-FORMING APPARATUS AND FILM-FORMING METHOD 审中-公开
    FIMBILDUNGSVORRICHTUNG UND FILMBILDUNGSVERFAHREN

    公开(公告)号:EP1681367A4

    公开(公告)日:2008-08-27

    申请号:EP04734739

    申请日:2004-05-25

    申请人: SHINMAYWA IND LTD

    摘要: A film-forming apparatus and a film-forming method are disclosed wherein a high-frequency voltage from an HF power supply (11) is applied to a cathode (5) whose back surface is provided with a permanent magnet (10) to generate a plasma in a reactive mode and a film is formed through plasma polymerization using the thus-generated plasma. By regulating the pressure of a plasma source gas within a vacuum chamber (1), a plasma not in the reactive mode but in the metallic mode is generated and a film is formed through magnetron sputtering, wherein the cathode (5) is the sputtering target, using the thus-generated plasma.

    摘要翻译: 公开了一种成膜装置和成膜方法,其中来自HF电源(11)的高频电压施加到阴极(5),阴极(5)的背面设置有永磁体(10)以产生 通过使用由此产生的等离子体进行等离子体聚合而形成反应模式的等离子体和膜。 通过调节真空室(1)内的等离子体源气体的压力,产生不处于反应模式但处于金属模式的等离子体并且通过磁控溅射形成膜,其中阴极(5)是溅射靶 使用由此产生的等离子体。