-
公开(公告)号:EP4419488A1
公开(公告)日:2024-08-28
申请号:EP21801444.7
申请日:2021-10-21
申请人: Mimsi Materials AB
发明人: AIJAZ, Asim , ELOFSSON, Viktor John , GUNNARSSON, Rickard, Tim , PILLAY, Sankara , SARAKINOS, Konstantinos
CPC分类号: C03C17/36 , C03C17/3618 , C03C17/3644 , C03C17/3649 , C03C17/366 , C03C17/3673 , C03C17/3652 , C03C17/3647 , C03C17/3694 , C03C2217/9120130101 , C03C2217/94420130101 , C23C14/3464 , C23C14/562
-
公开(公告)号:EP4398283A2
公开(公告)日:2024-07-10
申请号:EP24166424.2
申请日:2018-12-21
申请人: Institute Of Geological And Nuclear Sciences Limited , Futter, Richard John , Davidson, Ryan James
IPC分类号: H01J37/34
CPC分类号: C23C14/04 , C23C14/46 , H01J2237/314620130101 , H01J37/3178 , C23C14/14 , C23C14/046 , C23C14/562 , C23C14/3407
摘要: An ion beam sputtering apparatus comprising: an ion source configured to generate a hollow ion beam along a beam axis that is located in a hollow part of the beam; and a sputtering target having a target body that defines at least one target surface, the target body comprising sputterable particles, the target body being located relative to the ion source so that the ion beam hits the at least one target surface to sputter particles from the target body towards a surface of an object to be modified; wherein the target body is shaped so that the particles sputtered towards a surface to be modified are generally sputtered from the sputtering target in radially extending sputter directions relative to the beam axis, the sputter directions extending away from the beam axis; wherein an axis of the target body is substantially coaxial with the beam axis; and wherein the cross-sectional area of at least part of the target body, in a plane perpendicular to the beam axis, increases in a direction away from the ion source from a first cross-sectional area closer to the ion source than a second cross-sectional area further from the ion source, wherein the first cross-sectional area is substantially smaller than a cross-sectional area of the hollow portion of the ion beam, and wherein the second cross-sectional area is substantially larger than a cross-sectional area of an external periphery of the hollow ion beam. Also disclosed is a method of sputtering particles onto a surface to be modified and a method of sputtering particles onto an inner surface of an arcuate surface of a conduit.
-
公开(公告)号:EP3876307B1
公开(公告)日:2024-07-10
申请号:EP18939164.2
申请日:2018-11-09
CPC分类号: Y02E60/10 , H01M4/661 , H01M4/664 , H01M4/667 , H01M4/662 , H01M10/052 , C23C28/322 , C23C28/345 , C23C14/562 , C25D3/38 , H01M4/668 , C25D5/10 , C25D7/0614 , C23C14/205 , C23C14/081
-
公开(公告)号:EP4388144A1
公开(公告)日:2024-06-26
申请号:EP22764666.8
申请日:2022-08-08
发明人: BIENHOLZ, Stefan , STILLE, Sebastian , KREBS, Stefan , PIEDRA-GARZA, Luis Fernando , SCHUHMACHER, Bernd
CPC分类号: C23C14/16 , C23C14/562 , C23C14/24
-
公开(公告)号:EP4367285A1
公开(公告)日:2024-05-15
申请号:EP22838204.0
申请日:2022-05-26
CPC分类号: C23C14/26 , C23C14/243 , C23C14/562 , C23C14/20 , C23C14/50
-
公开(公告)号:EP3728685B1
公开(公告)日:2024-04-17
申请号:EP18890049.2
申请日:2018-12-21
CPC分类号: C23C14/04 , C23C14/46 , H01J2237/314620130101 , H01J37/3178 , C23C14/14 , C23C14/046 , C23C14/562 , C23C14/3407
-
公开(公告)号:EP2702184B1
公开(公告)日:2018-12-05
申请号:EP11716931.8
申请日:2011-04-29
发明人: HOFFMANN, Gerd , WOLFF, Alexander
CPC分类号: C23C14/243 , C23C14/0021 , C23C14/562 , C23C14/564
摘要: A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces.
-
公开(公告)号:EP2899293B1
公开(公告)日:2018-11-14
申请号:EP13839032.3
申请日:2013-09-12
申请人: LINTEC Corporation
CPC分类号: H01J37/04 , C23C14/48 , C23C14/562 , H01J37/3171 , H01J37/32412 , H01J37/32541 , H01J37/32568 , H01J37/3277 , H05H1/46 , H05H2001/485
摘要: The ion implantation apparatus of the invention includes a vacuum chamber 11, a roller electrode 13 having a portion of an outer circumferential part on which a film 2 is wound, voltage application means 21 for applying a voltage to the roller electrode, and gas introduction means 31 for supplying a gas into the vacuum chamber, in operation, voltage being applied to the roller electrode by the voltage application means, and the gas being supplied into the chamber through the gas introduction means, to thereby form a plasma, whereby a surface of the film is subjected to an ion implantation treatment, wherein an electrode member 42 is disposed so as to be opposite the portion of the roller electrode on which the film is wound.
-
公开(公告)号:EP3368705A1
公开(公告)日:2018-09-05
申请号:EP16797448.4
申请日:2016-10-20
发明人: GAWER, Olaf , RICHERT, Holger , ELLRICH, Jens
IPC分类号: C23C14/56
CPC分类号: C23C14/562 , C23C14/54 , C23C14/566 , C23C14/568
摘要: The invention relates to a device and a method for coating extra-long sheet-type substrates, in particular glass panes, in a vacuum coating system, said system having the following features: a) a series connection of chambers, through which each substrate sheet (9) passes and which are arranged on the entry side, namely a load lock chamber (1), a buffer chamber (2) and a transfer chamber (3), the entry side of each of said chambers being vacuum-sealable by a check valve (8, 11, 15), wherein an area of process chambers (4) follows the transfer chamber (3) and an exit-side series connection of a transfer chamber (5), buffer chamber (7) and load lock chamber (8) follows the process chambers (4); b) a conveyor device (10) constructed on rollers; c) a single high-power vacuum pump (13) with an adapter flange (14) in the region of the buffer chamber (2); d) at least two flow baffles (12) in the region of the buffer chamber (2); e) a system (16) for the longitudinal displacement of the flow baffles (12) and a system (17) for adjusting the height of the flow baffles (12); f) an assembly for controlling the dynamic processes.
-
公开(公告)号:EP2291855B1
公开(公告)日:2018-06-27
申请号:EP09755549.4
申请日:2009-04-15
发明人: BRITT, Jeffrey, S. , ALBRIGHT, Scot
IPC分类号: H01L21/00
CPC分类号: H01L31/1876 , C23C14/024 , C23C14/0623 , C23C14/22 , C23C14/243 , C23C14/542 , C23C14/562 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/0445 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.
-
-
-
-
-
-
-
-
-