公开(公告)号：EP3901326A1

公开(公告)日：2021-10-27

申请号：EP19899164.8

申请日：2019-12-03

申请人： ADEKA CORPORATION

发明人： SAKURAI, Atsushi ,  HATASE, Masako ,  YOSHINO, Tomoharu ,  NISHIDA, Akihiro ,  YAMASHITA, Atsushi

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455

摘要： Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1) :

where R 1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R 2 and R 3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z 1 represents an integer of from 1 to 3.

公开(公告)号：EP3144313A1

公开(公告)日：2017-03-22

申请号：EP15792769.0

申请日：2015-03-31

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  SAKURAI, Atsushi ,  HATASE, Masako ,  UCHIUZOU, Hiroyuki ,  NISHIDA, Akihiro

IPC分类号： C07F15/06 ,  C23C16/18 ,  H01L21/316

CPC分类号： C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

摘要： The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R 1 to R 3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

摘要翻译： 本发明的钴化合物是由下面通式（I）表示。 在通式（I）中，R 1至R 3各自独立地表示直链或具有1至5个碳原子支链的烷基。 此外，本发明的薄膜形成用原料中含有由通式（I）表示的钴化合物。 。根据本发明，能够提供一种能够以液体的形式，由于具有低的熔点，这可以在低的温度下分解并可以很容易地汽化被运送钴化合物由于具有高的 蒸气压; 和薄膜形成用原料这样做使用钴化合物。

公开(公告)号：EP3135664A1

公开(公告)日：2017-03-01

申请号：EP15782391.5

申请日：2015-03-30

申请人： Adeka Corporation

发明人： SAKURAI, Atsushi ,  HATASE, Masako ,  YOSHINO, Tomoharu ,  ENZU, Masaki

IPC分类号： C07C251/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F15/06

CPC分类号： C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

摘要： An alkoxide compound is represented by General Formula (I) below:

wherein R 1 to R 3 each independently represent hydrogen, a C 1-12 hydrocarbon group, etc.; R 4 represents a C 1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C 1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n + m represents the valence of the metal atom or silicon atom.

摘要翻译： 。醇盐化合物由以下通式（I）表示：其中R 1至R 3各自独立地表示氢，C 1-12烃基等; R 4表示C 1-12烃基等; 大号darstellt氢，卤素，羟基，成氨基，以阿紫基，膦基，腈基，羰基，C 1-12烃基等; 和M darstellt金属原子或硅原子，n darstellt为1或更大，米darstellt的整数的0以上的整数，并且n + m darstellt金属原子或硅原子的价数。

公开(公告)号：EP2940025A1

公开(公告)日：2015-11-04

申请号：EP13869190.2

申请日：2013-11-26

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  SAKURAI, Atsushi ,  SHIRATORI, Tsubasa ,  HATASE, Masako ,  UCHIUZOU, Hiroyuki ,  NISHIDA, Akihiro

IPC分类号： C07F5/06 ,  C23C16/40 ,  H01L21/316

CPC分类号： C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

摘要： The invention provides an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R 1 and R 2 each represent straight or branched C2-C5 alkyl, and R 3 represent methyl or ethyl. R 1 and R 2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.