Abstract:
A paper coating slip additive obtainable by free-radical polymerization, its preparation and its use in paper coating compositions are described. The additive is formed from (a) acid monomers selected from ethylenically unsaturated C3 to C8 carboxylic acids, (b) associative monomers of the general formula H2C═CR1—COO-(EO)n—(PO)m—R2 where R1 is hydrogen or methyl, n is at least two, m is from zero to 50, EO is an ethylene oxide group, PO is a propylene oxide group and R2 is a C8-C30 alkyl group or a C8-C30 alkaryl group, and (c) nonionic copolymerizable monomers other than a) and b), wherein said additive has a weight average molecular weight of below 200 000 and wherein tert-dodecyl mercaptan is used as chain transfer agent.
Abstract:
A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, - an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.
Abstract:
The invention relates to a xerogel comprising - from 20 to 90 weight % of a monomer component (a1) made of at least one multifunctional isocyanate and - from 10 to 80 weight % of a monomer component (a2) made of at least one multifunctional aliphatic amine, wherein the sum of the weight % of the monomer components (a1) and (a2) is 100 weight %, and the monomer components are present in the xerogel in polymer form, and the volume-weighted average pore diameter of the xerogel is no more than 5 µm. The invention further relates to a method for producing xerogels, to the xerogels thus obtainable, and to the use of the xerogels as insulation material and in vacuum insulation panels.
Abstract:
The invention relates to a xerogel comprising - from 20 to 90 weight % of a monomer component (a1) made of at least one multifunctional isocyanate and - from 10 to 80 weight % of a monomer component (a2) made of at least one multifunctional aliphatic amine, wherein the sum of the weight % of the monomer components (a1) and (a2) is 100 weight %, and the monomer components are present in the xerogel in polymer form, and the volume-weighted average pore diameter of the xerogel is no more than 5 µm. The invention further relates to a method for producing xerogels, to the xerogels thus obtainable, and to the use of the xerogels as insulation material and in vacuum insulation panels.
Abstract:
The invention relates to a xerogel comprising: 30 to 90 wt.% of a monomer component (a1) of at least one polyfunctional isocyanate and from10 to 70 wt.% of a monomer component (a2) of at least one polyfunctional aromatic amine, of which at least one is selected from 4,4'-diaminodiphenylmethane, 2,4'-diaminodiphenylmethane, 2,2'-diaminodiphenylmethane and oligomeric diaminodiphenylmethane, wherein the sum of the wt.% of the monomer components (a1) and (a2) is 100 wt.% and the monomer components are present in the xerogel in the polymeric form and the volume-weighted mean pore diameter of the xerogel is a maximum of 5 μm. The invention further relates to a method for production of xerogels, the xerogels obtained thus and the use of said xerogels as insulation and in vacuum insulation panels.
Abstract:
Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.
Abstract:
A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.
Abstract:
(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.