公开(公告)号：EP3237563B1

公开(公告)日：2019-02-20

申请号：EP15817796.4

申请日：2015-12-16

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321 ,  B24B37/04

公开(公告)号：EP3433327A1

公开(公告)日：2019-01-30

申请号：EP17710271.2

申请日：2017-03-13

Applicant: BASF SE

Inventor： LAUTER, Michael ,  GUEVENC, Haci Osman ,  SIEBERT, Max ,  LAN, Yongqing ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu

IPC: C09G1/04

公开(公告)号：EP2997102A2

公开(公告)日：2016-03-23

申请号：EP14797029.7

申请日：2014-05-05

Applicant: BASF SE

Inventor： LAN, Yongqing ,  PRZYBYLSKI, Peter ,  BAO, Zhenyu ,  PRÖLß, Julian

IPC: C09G1/02 ,  C09G1/04 ,  C09G1/00 ,  C09K3/14

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/32115 ,  H01L21/3212

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

公开(公告)号：EP2427523B1

公开(公告)日：2015-10-28

申请号：EP10715795.0

申请日：2010-04-19

Applicant: BASF SE

Inventor： RAMAN, Vijay Immanuel ,  GUBAYDULLIN, Ilshat ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

公开(公告)号：EP3714012A1

公开(公告)日：2020-09-30

申请号：EP18799774.7

申请日：2018-11-12

Applicant: BASF SE

Inventor： DAESCHLEIN, Christian ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  WEI, Te Yu ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

公开(公告)号：EP3334794A1

公开(公告)日：2018-06-20

申请号：EP16748132.4

申请日：2016-08-09

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：EP3237562A1

公开(公告)日：2017-11-01

申请号：EP15820852.0

申请日：2015-12-22

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/00

CPC classification number: C09G1/02 ,  B24B37/20 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract translation: 使用包含（i）钴和/或（ii）钴合金的基材（S）的化学机械抛光（CMP）组合物（Q），其中CMP组合物（Q）包含（A）无机 （B）具有至少一个羧酸功能的取代的芳族化合物作为腐蚀抑制剂，（C）至少一种氨基酸，（D）至少一种氧化剂，（E）水性介质，其中所述CMP组合物（Q ）具有7至10的pH。

公开(公告)号：EP2507824A1

公开(公告)日：2012-10-10

申请号：EP10832736.2

申请日：2010-11-25

Applicant: BASF SE

Inventor： RAMAN, Vijay Immanuel ,  EBERT, Sophia ,  BRANDS, Mario ,  LAN, Yongqing ,  ZACHARIAS, Philipp ,  GUBAYDULLIN, Ilshat ,  LI, Yuzhuo

IPC: H01L21/463 ,  C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, - an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

公开(公告)号：EP2997102B1

公开(公告)日：2019-07-10

申请号：EP14797029.7

申请日：2014-05-05

Applicant: BASF SE

Inventor： LAN, Yongqing ,  PRZYBYLSKI, Peter ,  BAO, Zhenyu ,  PRÖLß, Julian

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/306

公开(公告)号：EP3237561B1

公开(公告)日：2019-01-23

申请号：EP15808390.7

申请日：2015-12-11

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/00 ,  C09G1/02