公开(公告)号：EP3605590B1

公开(公告)日：2024-05-22

申请号：EP18777031.8

申请日：2018-03-05

IPC: H01L21/02 ,  C11D1/22 ,  C11D3/04 ,  C11D3/20 ,  C11D3/39 ,  C11D7/08 ,  C11D17/08 ,  G11B5/84

CPC classification number: C11D1/22 ,  C11D3/04 ,  C11D3/20 ,  C11D3/39 ,  C11D7/08 ,  C11D17/08 ,  G11B5/84 ,  H01L21/02074 ,  H01L21/02065

公开(公告)号：EP2521165B1

公开(公告)日：2018-09-12

申请号：EP09852805.2

申请日：2009-12-28

Applicant: Fujitsu Limited

Inventor： KANKI, Tsuyoshi ,  NAKATA, Yoshihiro ,  KOBAYASHI, Yasushi

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/288 ,  H05K3/24

CPC classification number: H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

Abstract: [Object] To provide an interconnection structure and a method of forming the same, the interconnection structure capable of avoiding an increase in leakage current or an increase in interconnection resistance caused by oxidation, being less likely to have electromigration occur therein, and having a higher reliability than the conventional ones. [Solving Means] After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu-N-R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu-N-R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

公开(公告)号：EP3099839A1

公开(公告)日：2016-12-07

申请号：EP15743809.4

申请日：2015-01-29

Applicant: Entegris, Inc. ,  Atmi Taiwan Co., Ltd.

Inventor： SUN, Laisheng ,  ZHANG, Peng ,  LIU, Jun ,  MEDD, Steven ,  BARNES, Jeffrey, A. ,  JENQ, Shrane, Ning

IPC: C23G1/14 ,  C11D1/62

CPC classification number: C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C23G1/20 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：EP2988321A4

公开(公告)日：2016-11-02

申请号：EP14784903

申请日：2014-04-07

Applicant: KANTO KAGAKU

Inventor： MORITA KIKUE ,  HORIKE CHIYOKO ,  FUKAYA KEISUKE ,  OHWADA TAKUO

IPC: C11D3/28 ,  C11D3/30 ,  C11D7/32 ,  H01L21/02 ,  H01L21/304

CPC classification number: C11D7/3281 ,  C11D3/28 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/36 ,  C11D11/0047 ,  C11D17/08 ,  H01L21/02074

Abstract: The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.

Abstract translation: 本发明的目的是提供一种用于清洁在半导体元件等电子器件的制造工序中经过化学机械研磨（CMP）等处理的基板等的清洗液。 这种用于清洗具有Cu布线的基板的清洁液组合物包括一种或多种碱性化合物和一种或多种含有氮原子的杂环芳族化合物，并且具有8-11的氢离子浓度（pH）。

公开(公告)号：EP3051577A1

公开(公告)日：2016-08-03

申请号：EP14859390.8

申请日：2014-11-07

Applicant: Wako Pure Chemical Industries, Ltd.

Inventor： KAJIKAWA Takayuki ,  HAYASHI Kohei ,  MIZUTA Hironori ,  WATAHIKI Tsutomu

IPC: H01L21/304 ,  C11D7/26 ,  C11D7/32 ,  C11D17/08

CPC classification number: C11D11/0047 ,  C11D7/261 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684 ,  H01L23/53238

Abstract: The present invention relates to a cleaning agent for a semiconductor substrate having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film to be used in a post-process of a chemical mechanical polishing process, comprising (A) an organic acid represented by general formula described in the present specification, (B) amines selected from the group consisting of (B-1) diamines, (B-2) amidines, (B-3) azoles, and (B-4) pyrazines or pyrimidines, represented by general formulae described in the present specification, (C) a hydroxylamine derivative, and (D) an oxygen scavenger represented by general formula described in the present specification, and being an aqueous solution having a pH of 10 or higher; and a processing method for the surface of a semiconductor substrate, having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film, which comprises using the cleaning agent.

Abstract translation: 本发明涉及一种清洗剂具有铜布线的电影或铜合金布线的电影，和一个半导体基片的薄膜，以在化学机械抛光工艺的后处理中使用，其包括含钴的（A） 通过在本说明书中描述的通式表示的有机羧酸，选自下组的（B-1）二胺，（B-2）脒，（B-3）唑类，和（B-4）吡嗪选择（B）cardamines 或嘧啶，由通式本说明书中记载的，（C）羟胺衍生物，和（D）表示由本说明书中所述通式中，并且是pH为10或更高的水溶液代表除氧剂; 和用于半导体基板的表面处理方法中，具有铜布线的电影或铜合金布线的电影，和含钴的电影，该方法包括使用该清洗剂。

公开(公告)号：EP1845555B8

公开(公告)日：2016-06-29

申请号：EP07015166.7

申请日：2002-02-06

Applicant: Entegris, Inc.

Inventor： Naghshineh, Shahriar ,  Barnes, Jeff ,  Oldak, Ewa B.

IPC: H01L21/321 ,  C11D7/26 ,  C11D7/32

CPC classification number: H01L21/02074 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/28 ,  C11D3/30 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/425 ,  H01L21/02063

公开(公告)号：EP2989231A1

公开(公告)日：2016-03-02

申请号：EP14787602.3

申请日：2014-04-22

Applicant: Advanced Technology Materials, Inc.

Inventor： LIU, Jun ,  SUN, Laisheng ,  MEDD, Steven ,  BARNES, Jeffrey, A. ,  WRSCHKA, Peter ,  THOMAS, Elizabeth

IPC: C23G1/00 ,  C23G1/18

CPC classification number: C11D3/0073 ,  C11D3/0042 ,  C11D3/30 ,  C11D11/0041 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02068 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残渣和污染物。 清洁组合物包括腐蚀抑制剂和表面活性剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：EP2971248A1

公开(公告)日：2016-01-20

申请号：EP14769942.5

申请日：2014-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： KO, Cheng-Yuan

IPC: C23G1/00

CPC classification number: C11D7/3281 ,  C11D3/0073 ,  C11D3/2086 ,  C11D3/26 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/361 ,  C11D3/364 ,  C11D3/365 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/36 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02074

Abstract: An aqueous cleaning composition for post copper chemical mechanical planarization is provided. The composition comprises an organic base, a copper etchant, an organic ligand, a corrosion inhibitor, and water, wherein the organic base is in a concentration of at least 200 ppm, the copper etchant is in a concentration of at least 200 ppm, the organic ligand is in a concentration of at least 50 ppm, and the corrosion inhibitor is in a concentration of at least 10 ppm. When used in the post copper chemical mechanical planarization cleaning procedure, the aqueous cleaning composition can effectively remove the residual contaminants from the wafer surface and reduce the defect counts on the wafer surface, while simultaneously, impart the wafers with a better surface roughness.

公开(公告)号：EP2843689A4

公开(公告)日：2015-05-13

申请号：EP13780549

申请日：2013-04-26

Applicant: WAKO PURE CHEM IND LTD

Inventor： KAWADA HIROMI ,  MIZUTA HIRONORI ,  MAESAWA TSUNEAKI

IPC: C11D7/32 ,  C11D7/36 ,  H01L21/306

CPC classification number: C11D11/0047 ,  C11D7/3218 ,  C11D7/36 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/7684

Abstract: The purpose of the present invention is to provide: a cleaning agent for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. The present invention relates to a cleaning agent for a semiconductor substrate to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7; and a method for processing a semiconductor substrate surface.

公开(公告)号：EP2850651A2

公开(公告)日：2015-03-25

申请号：EP13791242.4

申请日：2013-05-17

Applicant: Advanced Technology Materials, Inc. ,  ATMI Taiwan Co., Ltd.

Inventor： JENQ, Shrane, Ning ,  BOGGS, Karl, E. ,  LIU, Jun ,  THOMAS, Nicole

IPC: H01L21/302

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D7/08 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C25D5/48 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.