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23 条记录 (耗时 0.019 秒)

    CROSSLINKED (METH)ACRYLIC ACID COPOLYMER AND SECONDARY-CELL ELECTRODE EMPLOYING THE SAME
    11.
    发明公开
    CROSSLINKED (METH)ACRYLIC ACID COPOLYMER AND SECONDARY-CELL ELECTRODE EMPLOYING THE SAME 有权
    交联的（甲基）丙烯酸共聚物和使用该共聚物的二次电池电极

    公开(公告)号：EP2042523A1

    公开(公告)日：2009-04-01

    申请号：EP07744670.6

    申请日：2007-06-04

    申请人： SUMITOMO SEIKA CHEMICALS CO., LTD.

    发明人： FUJIMOTO, Nobutaka ,  UEDA, Koji

    IPC分类号： C08F8/06 ,  C08F220/34 ,  H01M4/60

    CPC分类号： C08F220/34 ,  C08F8/06 ,  C08F220/18 ,  C08F222/1006 ,  C08F2220/1891 ,  C08F2810/20 ,  C08L2312/00 ,  H01M4/60 ,  H01M4/621 ,  H01M10/0525 ,  C08F2222/1013 ,  C09D133/14 ,  C08L27/16 ,  C08K3/04

    摘要： It is an object of the present invention to provide a crosslinked (meth)acrylic acid-type copolymer excellent in stability to a solvent, which causes substantially no crack due to drying when applied onto the surface of a current collector, and a secondary-cell electrode using the copolymer.
    The present invention relates to a crosslinked (meth)acrylic acid-type copolymer obtained by the steps of: polymerization of a (meth)acrylic acid imino compound represented by the general formula (1):

    (in the formula (1), R represents a hydrogen atom or a methyl group) and a (meth)acrylic acid ester in the presence of a crosslinking agent, and nitroxidation.

    摘要翻译： 本发明的目的在于提供一种交联（甲基）丙烯酸系共聚物，其对溶剂的稳定性优异，涂布于集电体表面时几乎不发生因干燥而产生裂纹，二次电池 使用该共聚物的电极。 本发明涉及通过以下步骤获得的交联的（甲基）丙烯酸型共聚物：由通式（1）表示的（甲基）丙烯酸亚氨基化合物的聚合：（式（1）中，R表示 氢原子或甲基）和（甲基）丙烯酸酯在交联剂存在下反应，并且进行氮氧化。

    SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE
    15.
    发明公开
    SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE 有权
    HALBLEITERBAUEMENT，VERFAHREN ZUR HERSTELLUNG DAVON UND ALIPHATIS​​CHES POLYCARBONAT

    公开(公告)号：EP3086360A1

    公开(公告)日：2016-10-26

    申请号：EP14871269.8

    申请日：2014-12-16

    申请人： Japan Advanced Institute of Science and Technology ,  Sumitomo Seika Chemicals Co., Ltd.

    发明人： INOUE, Satoshi ,  SHIMODA, Tatsuya ,  FUJIMOTO, Nobutaka ,  NISHIOKA, Kiyoshi ,  KARASHIMA, Shuichi

    IPC分类号： H01L21/336 ,  C08G64/02 ,  H01L21/28 ,  H01L29/786

    摘要： It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.

    摘要翻译： 本发明的目的是提供一种薄膜晶体管及其制造方法，其可以容易地实现源极/漏极区域的自对准形成，而无需通过真空或低压下的工艺或不使用 昂贵的设备。 根据本发明的制造薄膜晶体管的示例性方法包括：脂肪族聚碳酸酯层形成步骤，形成脂肪族聚碳酸酯层50，其覆盖设置在半导体层20上方的栅电极层40，栅极绝缘体30插入在栅极 电极层40和半导体层20，并且还覆盖半导体层20，并且具有使半导体层20成为n型或p型半导体层的掺杂剂，以及在导致引入的温度下加热的加热步骤 的掺杂剂进入半导体层20中并分解脂族聚碳酸酯层50。