公开(公告)号：EP2690654B1

公开(公告)日：2018-12-26

申请号：EP13020062.9

申请日：2013-07-25

申请人： Stanley Electric Co., Ltd.

发明人： Saito, Chizu ,  Kato, Hiroyuki ,  Sano, Michihiro

IPC分类号： H01L21/36 ,  H01L21/02 ,  H01L29/22

CPC分类号： H01L29/227 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/12 ,  H01L29/22 ,  H01L29/36

摘要： A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

公开(公告)号：EP1984953B1

公开(公告)日：2018-12-12

申请号：EP07715131.4

申请日：2007-02-23

申请人： Canon Kabushiki Kaisha

发明人： HAYASHI, Ryo ,  ABE, Katsumi ,  SANO, Masafumi

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969

摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

公开(公告)号：EP3220414A4

公开(公告)日：2018-06-20

申请号：EP15778180

申请日：2015-04-10

申请人： BOE TECHNOLOGY GROUP CO LTD

发明人： HU HEHE

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/465 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/127 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/465 ,  H01L21/469 ,  H01L21/477 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/10 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

摘要： This invention provides a polycrystalline oxide thin-film transistor (TFT) array substrate and a method of manufacturing the same. As the polycrystalline oxide thin film layer of the polycrystalline oxide TFT array substrate is formed by a two-step process according to the present invention, the ultra-high temperature annealing process required in the prior art is obviated, and the object of producing a polycrystalline oxide TFT array substrate by the existing manufacturing facilities of the amorphous oxide TFT array substrates is achieved without adding any special equipment or special operation, and it is easy to implement; meanwhile, the energy consumption is reduced as the high temperature annealing is no longer needed.

公开(公告)号：EP3291304A1

公开(公告)日：2018-03-07

申请号：EP15883644.5

申请日：2015-09-02

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC分类号： H01L29/24 ,  H01L29/786 ,  H01L21/34 ,  H01L21/02

CPC分类号： H01L29/7869 ,  H01L21/02 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02565 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

摘要翻译： 本公开公开了属于平板显示器领域的氧化物半导体薄膜，薄膜晶体管，制造方法和器件。 氧化物半导体薄膜由含有锆和铟的氧化物构成。 制造氧化物半导体薄膜的方法包括使用含锆和铟的氧化物制备靶，并且溅射靶以获得氧化物半导体薄膜。

公开(公告)号：EP3274421A1

公开(公告)日：2018-01-31

申请号：EP16713389.1

申请日：2016-03-25

申请人： Nexdot

发明人： HEUCLIN, Hadrien ,  NADAL, Brice ,  GRAZON, Chloé ,  MAHLER, Benoît ,  LHUILLIER, Emmanuel

IPC分类号： C09K11/56 ,  C09K11/88 ,  C09K11/02

CPC分类号： G02F1/133603 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  G02F1/133606 ,  G02F2001/133614 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02565 ,  H01L21/02601 ,  H01L21/02628

摘要： The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.

公开(公告)号：EP3241234A1

公开(公告)日：2017-11-08

申请号：EP15816623.1

申请日：2015-12-04

申请人： Snaptrack, Inc.

发明人： NOMURA, Kenji ,  HONG, John Hyunchul

IPC分类号： H01L21/365

CPC分类号： H01L29/66969 ,  C23C16/407 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02422 ,  H01L21/02535 ,  H01L21/02565 ,  H01L21/0262 ,  H01L27/1225 ,  H01L29/7869

摘要： Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 10
19 /cm
3 . The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.

公开(公告)号：EP3224862A1

公开(公告)日：2017-10-04

申请号：EP15779092.4

申请日：2015-09-24

申请人： SanDisk Technologies LLC

发明人： RABKIN, Peter ,  ALSMEIER, Johann ,  HIGASHITANI, Masaaki

IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/792

CPC分类号： H01L29/24 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28282 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/7926

摘要： Disclosed herein are 3D NAND memory devices having an oxide semiconductor vertical NAND channel and methods for forming the same. The NAND string comprises a vertically-oriented cylindrically shaped channel (699), the vertically-oriented cylindrically shaped channel comprising an oxide semiconductor having a crystalline structure, the crystalline structure having an axis (a, b, or c) that is aligned crystalline with respect to the cylindrical shape of the vertically-oriented channel substantially throughout the vertically- oriented channel. The crystalline structure may, for example, have a first axis that is aligned parallel to the vertical channel, a second axis that is aligned perpendicular to a surface of the cylindrically shaped channel, etc.

摘要翻译： 本文公开了具有氧化物半导体垂直NAND通道的3D NAND存储器器件及其形成方法。 氧化物半导体可以具有晶体结构。 垂直定向的NAND串的沟道可以是圆柱形的。 该晶体结构具有可相对于竖直取向的通道的圆柱形形状基本整个垂直取向的通道对齐的轴线。 晶体结构可具有平行于垂直通道排列的第一轴，垂直于圆柱形通道的表面排列的第二轴等

公开(公告)号：EP2506308B1

公开(公告)日：2017-09-13

申请号：EP12161178.4

申请日：2012-03-26

申请人： BOE Technology Group Co., Ltd.

发明人： Liu, Xiaodi ,  Sun, Li ,  Chen, Haijing

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/027 ,  H01L21/477 ,  H01L21/441 ,  H01L21/467

CPC分类号： H01L29/78693 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/0273 ,  H01L21/441 ,  H01L21/467 ,  H01L21/477 ,  H01L29/66969 ,  H01L29/78618

公开(公告)号：EP2889918B1

公开(公告)日：2017-08-02

申请号：EP14162221.7

申请日：2014-03-28

申请人： Shenyang Institute of Engineering

发明人： Zhang, Tieyan ,  Zhang, Dong ,  Ju, Zhenhe ,  Zhao, Yan ,  Li, Yucai ,  Song, Shiwei ,  Wang, Jian ,  Wang, Gang ,  Bian, Jiming ,  Liu, Baodan

IPC分类号： H01L31/0304 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L21/02

CPC分类号： H01L31/03048 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/03762 ,  H01L31/03926 ,  H01L31/075 ,  H01L31/1848 ,  H01L31/202 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

公开(公告)号：EP3190608A4

公开(公告)日：2017-07-26

申请号：EP15837484

申请日：2015-08-28

申请人： FLOSFIA INC

发明人： ODA MASAYA ,  TAKATSUKA AKIO ,  HITORA TOSHIMI

IPC分类号： H01L21/365 ,  H01L29/04 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/16 ,  H01L33/26

CPC分类号： H01L21/02565 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/242 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/739 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/42

摘要： A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

摘要翻译： 提供具有优异结晶度的多层结构和具有高迁移率的多层结构的半导体器件。 多层结构包括：刚玉结构的晶体衬底; 以刚玉结晶结晶性氧化物为主要成分的结晶性膜，所述膜直接形成在所述基板上或其间具有其他层，所述结晶基板具有0.2°〜12.0°的偏离角，所述结晶性氧化物含有1个或 从铟，铝和镓中选择更多的金属。