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    OXIDE SEMICONDUCTOR LAYER AND PRODUCTION METHOD THEREFOR, OXIDE SEMICONDUCTOR PRECURSOR, OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR ELEMENT, AND ELECTRONIC DEVICE
    8.
    发明公开
    OXIDE SEMICONDUCTOR LAYER AND PRODUCTION METHOD THEREFOR, OXIDE SEMICONDUCTOR PRECURSOR, OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR ELEMENT, AND ELECTRONIC DEVICE 审中-公开
    用于制作，OXIDHALBLEITERVORLÄUFER，氧化物半导体层，半导体元件和电子设备氧化物半导体层和过程

    公开(公告)号：EP3032576A1

    公开(公告)日：2016-06-15

    申请号：EP14835273.5

    申请日：2014-07-04

    申请人： Japan Advanced Institute of Science and Technology ,  Sumitomo Seika Chemicals Co., Ltd.

    发明人： INOUE, Satoshi ,  SHIMODA, Tatsuya ,  KAWAKITA, Tomoki ,  FUJIMOTO, Nobutaka ,  NISHIOKA. Kiyoshi

    IPC分类号： H01L21/368 ,  C01G15/00 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/66969 ,  C01G15/00 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/7869

    摘要： The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90wt% or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

    摘要翻译： 本发明提供了氧化物半导体层上确实具有较少的裂缝且具有优异的电特性和稳定性，以及作为半导体元件，并包括氧化物半导体层中的每个电子设备。 本发明提供了示例性方法制造的氧化物半导体层上的，并且该方法包括将前体层形成，上或上方的基板的步骤中，包含金属的化合物的层状氧化物半导体前体以对分散在氧化物半导体被氧化成 一个解决方案，包括由脂族聚碳酸酯构成的粘合剂，和在比第二等于或更高的温度在第一温度下加热前体层实现的粘合剂的90重量％以上的分解，然后进行退火将前体层的退火步骤 温度（由X表示）做了比所述第一温度高，达到金属和氧之间的键合，并具有在差热分析（​​DTA）的放热峰值。