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11.发明公开GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开III族氮化物半导体设备的情况的III族氮化物半导体器件的外延和方法
公开(公告)号：EP2410580A4
公开(公告)日：2013-11-06
申请号：EP09812406
申请日：2009-04-24
发明人： KYONO TAKASHI , YOSHIZUMI YUSUKE , ENYA YOHEI , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
IPC分类号： H01L33/00 , B82Y10/00 , B82Y20/00 , B82Y40/00 , C30B29/38 , H01L21/02 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
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公开(公告)号：EP2455989A4
公开(公告)日：2013-01-16
申请号：EP10799702
申请日：2010-06-18
发明人： KYONO TAKASHI , ENYA YOHEI , YOSHIZUMI YUSUKE , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI , ADACHI MASAHIRO , TOKUYAMA SHINJI
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404
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13.发明公开METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING EPITAXIAL WAFER 审中-公开用于生产发光NITRIDHALBLEITERELEMENTS及其制造方法的外延晶片
公开(公告)号：EP2352182A4
公开(公告)日：2015-02-11
申请号：EP09821994
申请日：2009-10-19
IPC分类号： H01L21/205 , H01L33/06 , H01L33/16 , H01L33/32
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02579 , H01L21/0262 , H01L33/0062 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/34333
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14.发明公开GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING A GROUP-III NITRIDE SEMICONDUCTOR ELEMENT 审中-公开III族氮化物半导体BAULE MENT，外延基板及其制造方法Ⅲ族氮化物半导体元件
公开(公告)号：EP2456025A4
公开(公告)日：2015-01-21
申请号：EP10799834
申请日：2010-07-13
发明人： ENYA YOHEI , YOSHIZUMI YUSUKE , KYONO TAKASHI , SUMITOMO TAKAMICHI , AKITA KATSUSHI , UENO MASAKI , NAKAMURA TAKAO
IPC分类号： H01S5/343 , H01L21/205
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
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公开(公告)号：EP2472606A4
公开(公告)日：2015-01-07
申请号：EP10781399
申请日：2010-02-26
发明人： UENO MASAKI , YOSHIZUMI YUSUKE , ENYA YOHEI , KYONO TAKASHI , AKITA KATSUSHI , SUMITOMO TAKAMICHI , ADACHI MASAHIRO , TOKUYAMA SHINJI
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
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16.发明公开GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR PREPARING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开III族氮化物半导体激光元件及其制造方法III族氮化物半导体激光元件
公开(公告)号：EP2487765A4
公开(公告)日：2014-12-31
申请号：EP10820602
申请日：2010-09-29
发明人： YOSHIZUMI YUSUKE , ENYA YOHEI , KYONO TAKASHI , ADACHI MASAHIRO , TOKUYAMA SHINJI , SUMITOMO TAKAMICHI , UENO MASAKI , IKEGAMI TAKATOSHI , KATAYAMA KOJI , NAKAMURA TAKAO
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/16 , H01S5/2009 , H01S5/2201 , H01S5/3213 , H01S5/34333 , H01S2301/14
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公开(公告)号：EP2528117A4
公开(公告)日：2013-08-07
申请号：EP10843086
申请日：2010-09-22
发明人： TOKUYAMA SHINJI , UENO MASAKI , ADACHI MASAHIRO , KYONO TAKASHI , SUMITOMO TAKAMICHI , KATAYAMA KOJI , SAITO YOSHIHIRO
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
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