摘要:
The invention relates to a method for producing hydrogenated polygermasilane as a pure compound or a mixture of compounds, wherein halogenated polygermasilane is hydrogenated. The invention also relates to a hydrogenated polygermasilane, to a germanium layer produced from the hydrogenated polygermasilane, and to a method for producing such a layer.
摘要:
The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.
摘要:
The invention relates to a method for producing fluorinated polysilanes. Hydrogen fluoride and/or hexafluorosilicic acid, which are obtained in particular during acid digestion of mineral phosphates in the production of phosphate fertilisers, are used for the production of SiF 4 . The SiF 4 obtained is thermally or plasma-chemically converted to fluorinated polysilane. The method is particularly efficient and cost-effective.
摘要:
The invention relates to the generation of hydrogen for operating fuel cells in aircraft, wherein hydrogen is generated by reacting hydrogenated polysilanes (HPS) with water in a reaction chamber. The reaction chamber comprises a feed device and a discharge device. Hydrogenated polysilanes are higher silanes that are safe to handle and are particularly suitable for use as hydrogen carriers in aircraft. In addition, HPS can be used to produce very pure hydrogen, wherein the hydrogen can be conducted via the discharge device directly, without an intermediate step, into a fuel cell, for example into a polymer electrolyte membrane fuel cell. In order to expedite the hydrolysis in the reaction chamber, the reaction can take place in alkaline medium and/or in the presence of catalysts.
摘要:
The invention relates to a method and a device for producing short-chained halogenated polysilanes and/or short-chained halogenated polysilanes and halogenide-containing silicon by thermolytic decomposition of long-chained halogenated polysilanes. The thermolytic decomposition of long-chained halogenated polysilanes diluted with low-molecular halogen silanes is carried out under an atmosphere of halogen silanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.
摘要:
The invention relates to kinetically stable halogenated polysilanes as a mixture of compounds having respectively at least four silicon atoms which are bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) said kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120 °C within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) said kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol%, in particular more than 11 mol%. Said kinetically stable halogenated polysilanes offer novel uses compared to less stable conventional halogenated polysilanes.
摘要:
The invention relates to bodies, coated by a SiC hard material layer or by a layer system comprising at least one SiC hard material layer, and to a method for producing said type of coated bodies. The aim of the invention is to supply bodies with SiC layers that have a particle-free, non-porous structure, a high degree of hardness, low brittleness, high bond strength, good oxidation resistance and a high resistance to crack growth. According to the invention, the bodies are coated by a SiC layer or a multi-layer coating system comprising at least one SiC layer, wherein the SiC layer comprises nano-crystalline 3C-SiC comprising halogen or a mixed layer comprising nano-crystalline 3C-SiC comprising halogen and amorphous SiC or nano-crystalline 3C-SiC comprising halogen and amorphous carbon. The coating of said bodies is carried out in a thermal CVD process, wherein a gas mixture comprising H 2 and/or one or more inert gases, one or more of the halogen polysilanes of the formulae Si n X 2n , Si n X 2n+2 , Si n X y H z , wherein X is the halogen and n ≥ 2 and one or more hydrocarbons is used. Alternatively according to the invention a gas mixture comprising one or more substituted halogen polysilanes having organic substitutes R of the general formulae Si n X y R z or Si n H x X y R z is used in H 2 and/or one or more inert gases, wherein X is the halogen and n ≥ 2, z > 0, y ≥ 1. The stoichiometric ratios 2n+2 = y +z or 2n=y+z apply for Si n X y R z and the stochiometric ratios 2n+2 = x+y+z or 2n=x+y+z apply for Si n H x X y R z.
摘要:
The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.