摘要:
The invention relates to a method for producing hexachlorodisilane. Hexachlorodisilane is obtained by the oxidative splitting of the chlorinated polysilane of the empirical formula SiCl x (x = 0,2- 0,8) using chlorine gas. As a result the hexachlorodisilane is selectively obtained with a high yield.
摘要:
A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.
摘要:
The invention relates to kinetically stable halogenated polysilanes as a mixture of compounds having respectively at least four silicon atoms which are bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) said kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120 °C within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) said kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol%, in particular more than 11 mol%. Said kinetically stable halogenated polysilanes offer novel uses compared to less stable conventional halogenated polysilanes.
摘要:
The invention relates to bodies, coated by a SiC hard material layer or by a layer system comprising at least one SiC hard material layer, and to a method for producing said type of coated bodies. The aim of the invention is to supply bodies with SiC layers that have a particle-free, non-porous structure, a high degree of hardness, low brittleness, high bond strength, good oxidation resistance and a high resistance to crack growth. According to the invention, the bodies are coated by a SiC layer or a multi-layer coating system comprising at least one SiC layer, wherein the SiC layer comprises nano-crystalline 3C-SiC comprising halogen or a mixed layer comprising nano-crystalline 3C-SiC comprising halogen and amorphous SiC or nano-crystalline 3C-SiC comprising halogen and amorphous carbon. The coating of said bodies is carried out in a thermal CVD process, wherein a gas mixture comprising H 2 and/or one or more inert gases, one or more of the halogen polysilanes of the formulae Si n X 2n , Si n X 2n+2 , Si n X y H z , wherein X is the halogen and n ≥ 2 and one or more hydrocarbons is used. Alternatively according to the invention a gas mixture comprising one or more substituted halogen polysilanes having organic substitutes R of the general formulae Si n X y R z or Si n H x X y R z is used in H 2 and/or one or more inert gases, wherein X is the halogen and n ≥ 2, z > 0, y ≥ 1. The stoichiometric ratios 2n+2 = y +z or 2n=y+z apply for Si n X y R z and the stochiometric ratios 2n+2 = x+y+z or 2n=x+y+z apply for Si n H x X y R z.
摘要:
The invention relates to chlorinated oligogermanes as a pure compound or as a mixture of compounds, and to a method for the production thereof. The chlorinated oligogermanes as a pure compound or a mixture of compounds respectively comprise at least one direct bond Ge-Ge, the substituents comprise chlorine or chlorine and hydrogen and in the composition thereof, the atomic ratio of substituent to germanium is at least 1:1. The mixture has on average a ratio Ge:Cl of 1:2 - 1:3, or the pure compound has a ratio Ge:Cl of 1:2 - 1:2, 67, preferably 1:2, 2 - 1:2, 5, and the mixture has an average number of germanium atoms of 2 - 10.
摘要:
One embodiment of the invention relates to a method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydrid, wherein the reaction occurs in the presence of a catalyst and an alkali metal halogenide, said catalyst comprising a halogenide of a multivalent metal and said reaction also occurs in an ethereal solution.
摘要:
The invention relates to a method for producing hydrogenated polygermasilane as a pure compound or a mixture of compounds, wherein halogenated polygermasilane is hydrogenated. The invention also relates to a hydrogenated polygermasilane, to a germanium layer produced from the hydrogenated polygermasilane, and to a method for producing such a layer.