摘要:
A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.
摘要:
The invention relates to a storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si-Si bonds, the substituents of which predominantly consist of hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1. The invention further relates to a method of obtaining H-silanes from a storage material of this nature.
摘要:
The invention relates to a halogenated polysilane (referred to in the following as polysilane) as a pure compound or as a mixture of compounds and to a thermal process for producing the same. The polysilane is characterized by characteristic shifts in its 29 Si NMR spectra and by typical intensity ratios of the bands in its Raman spectra. The polysilane (Si n X y ) has a high proportion of branched chains and rings. The process for producing the halogenated polysilane is improved in such a manner as to allow a high throughput (industrial production) and the production of a particularly soluble polysilane.
摘要:
The invention relates to nano-wires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nano-wires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si-Si and/or Ge-Si and/or Ge-Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.
摘要:
The invention relates to chlorinated oligogermanes as a pure compound or as a mixture of compounds, and to a method for the production thereof. The chlorinated oligogermanes as a pure compound or a mixture of compounds respectively comprise at least one direct bond Ge-Ge, the substituents comprise chlorine or chlorine and hydrogen and in the composition thereof, the atomic ratio of substituent to germanium is at least 1:1. The mixture has on average a ratio Ge:Cl of 1:2 - 1:3, or the pure compound has a ratio Ge:Cl of 1:2 - 1:2, 67, preferably 1:2, 2 - 1:2, 5, and the mixture has an average number of germanium atoms of 2 - 10.
摘要:
The invention relates to a chlorinated polysilane which has the formula SiCl x wherein x = 0,01 - 0,8 and which can be produced in particular by the thermolysis of a chloropolysilane at a temperature below 600 °C.
摘要:
One embodiment of the invention relates to a method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydrid, wherein the reaction occurs in the presence of a catalyst and an alkali metal halogenide, said catalyst comprising a halogenide of a multivalent metal and said reaction also occurs in an ethereal solution.