摘要:
A photo sensor (200) that is capable of generating a photo sensing signal corresponding only to ambient light by comprehending changes in electrical current depending on the change of temperature and compensating for the electrical current according the change of temperature and a flat panel display device using the photo sensor. The photo sensor includes: a photo sensing unit (210) generating a first current corresponding to an ambient light and a second current corresponding to an ambient temperature; a temperature compensating unit (220) including a dark diode (DPD) generating a third current having a same magnitude as the second current, corresponding to the ambient temperature due to block of light to be incident; and a buffer unit (230) outputting a light sensing signal corresponding to current having the same magnitude as the first current by subtracting the third current generated in the temperature compensating unit from the second current generated in the photo sensing unit (210).
摘要:
A photo sensor that is capable of generating a photo sensing signal corresponding only to ambient light by comprehending changes in electrical current depending on the change of temperature and compensating for the electrical current according the change of temperature and a flat panel display device using the photo sensor. The photo sensor includes: a photo sensing unit generating a first current corresponding to an ambient light and a second current corresponding to an ambient temperature; a temperature compensating unit including a dark diode generating a third current having a same magnitude as the second current, corresponding to the ambient temperature due to block of light to be incident; and a buffer unit outputting a light sensing signal corresponding to current having the same magnitude as the first current by subtracting the third current generated in the temperature compensating unit from the second current generated in the photo sensing unit.
摘要:
Die Erfindung betrifft ein Halbleiterbauelement (10) mit einem integrierten Schaltkreis, der zumindest einen mit einer siliziumhaltigen Beschichtung (32,34,36), insbesondere einer Beschichtung aus Siliziumnitrid oder Siliziumdioxid, versehenen Lichtdetektor (14,16,18) aufweist. Erfindungsgemäß ist vorgesehen, dass eine Schichtstärke der siliziumhaltigen Beschichtung (32,34,36), insbesondere der Beschichtung aus Siliziumnitrid oder Siliziumdioxid, derart gewählt ist, dass eine vorgebbare, schmalbandig wellenlängenselektive Transmission von Lichtwellen, insbesondere von Lichtwellen in einem Wellenlängenbereich von 300 nm bis 850 nm, erzielbar ist.
摘要:
Bauteil zur gerichteten, bidirektionalen optischen Datenübertragung, bei dem in einem ein- oder mehrteiligen Gehäuse als Bauteile ein Emitterchip zum Aussenden von IR-Strahlen, ein Detektorchip zum Empfangen von IR-Strahlen, ein integrierter Schaltkreis zum Verstärken der Sende- und Empfangsleistung und ein optisches System mit einer optischen Achse zur Bündelung der ausgesendeten und empfangenen Strahlen angeordnet sind. Kennzeichnend ist, daß das Detektorchip und der Emitterchip konzentrisch zur optischen Achse des optischen Systems aufeinander und auf dem integrierten Schaltkreis angeordnet sind.
摘要:
Technologies for chip-to-chip optical data transfer are disclosed. In the illustrative embodiment (FIG. 2), microLEDs (108) on a first chip (108) are used to send data to microphotodiodes (110) on a second chip (106). The beams from the microLEDs may be sent to the microphotodiodes using an optical bridge (112) as in fig. 2, microprisms, or using a channel through a substrate, a channel defined in a substrate, etc. The microLEDs (108) may be used for high-speed data transfer with low power usage. A chip may include a relatively large number of microLEDs (108) and/or microphotodiodes (110), allowing for a large bandwidth connection. MicroLEDs and microphotodiodes may be used to connect different parts of the same chip, different chips on the same package, different packages on the same device, or different chips on different devices.
摘要:
La présente demande concerne un procédé de fabrication d'un dispositif optoélectronique, comportant les étapes suivantes : a) disposer un empilement actif de diode photosensible (103) sur un premier substrat ; b) reporter l'empilement actif de diode photosensible (103) sur un circuit intégré de contrôle (151) préalablement formé dans et sur un deuxième substrat semiconducteur, puis retirer le premier substrat ; c) disposer un empilement actif de diode électroluminescente (113) sur un troisième substrat ; et d) après les étapes b) et c), reporter l'empilement actif de diode électroluminescente (113) sur l'empilement actif de diode photosensible (103), puis retirer le troisième substrat. La présente demande concerne également un dispositif optoélectronique correspondant ainsi qu'un système l'incorporant.
摘要:
A photo sensor that is capable of generating a photo sensing signal corresponding only to ambient light by comprehending changes in electrical current depending on the change of temperature and compensating for the electrical current according the change of temperature and a flat panel display device using the photo sensor. The photo sensor includes: a photo sensing unit generating a first current corresponding to an ambient light and a second current corresponding to an ambient temperature; a temperature compensating unit including a dark diode generating a third current having a same magnitude as the second current, corresponding to the ambient temperature due to block of light to be incident; and a buffer unit outputting a light sensing signal corresponding to current having the same magnitude as the first current by subtracting the third current generated in the temperature compensating unit from the second current generated in the photo sensing unit.
摘要:
A photo sensor (200) that is capable of generating a photo sensing signal corresponding only to ambient light by comprehending changes in electrical current depending on the change of temperature and compensating for the electrical current according the change of temperature and a flat panel display device using the photo sensor. The photo sensor includes: a photo sensing unit (210) generating a first current corresponding to an ambient light and a second current corresponding to an ambient temperature; a temperature compensating unit (220) including a dark diode (DPD) generating a third current having a same magnitude as the second current, corresponding to the ambient temperature due to block of light to be incident; and a buffer unit (230) outputting a light sensing signal corresponding to current having the same magnitude as the first current by subtracting the third current generated in the temperature compensating unit from the second current generated in the photo sensing unit (210).
摘要:
A photo sensor (200) that is capable of generating a photo sensing signal corresponding only to ambient light by comprehending changes in electrical current depending on the change of temperature and compensating for the electrical current according the change of temperature and a flat panel display device using the photo sensor. The photo sensor includes: a photo sensing unit (210) generating a first current corresponding to an ambient light and a second current corresponding to an ambient temperature; a temperature compensating unit (220) including a dark diode (DPD) generating a third current having a same magnitude as the second current, corresponding to the ambient temperature due to block of light to be incident; and a buffer unit (230) outputting a light sensing signal corresponding to current having the same magnitude as the first current by subtracting the third current generated in the temperature compensating unit from the second current generated in the photo sensing unit (210).