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34 条记录 (耗时 0.012 秒)

    Focal plane array and method for manufacturing the same
    1.
    发明公开
    Focal plane array and method for manufacturing the same 审中-公开
    焦平面阵列及其制造方法

    公开(公告)号：EP2363887A1

    公开(公告)日：2011-09-07

    申请号：EP10155249.5

    申请日：2010-03-02

    申请人： SensoNor Technologies AS

    发明人： Lapadatu, Adriana ,  Kittilsland, Gjermund

    IPC分类号： H01L27/146

    CPC分类号： H01L27/1467 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/1469

    摘要： A method of forming a focal plane array having at least one pixel (2) which is fabricated by: forming a first wafer having sensing material (3) provided on a surface, which is covered by a first sacrificial layer, the sensing material being a thermistor material and defining at least one pixel; providing supporting legs (7) for the at least one pixel within the first sacrificial layer, covering them with a further sacrificial layer and forming first conductive portions in the surface of the sacrificial layer that are in contact with the supporting legs; forming a second wafer (9) having read-out integrated circuit (ROIC), the second wafer being covered by a second sacrificial layer, into which is formed second conductive portions in contact with the ROIC; bringing the sacrificial oxide layers of the first wafer and second wafer together such that the first and second conductive portions are aligned and bonding them together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; and removing the sacrificial oxide layers to release the at least one pixel, such that the supporting legs are arranged underneath it.

    摘要翻译： 一种形成具有至少一个像素（2）的焦平面阵列的方法，所述像素（2）通过以下步骤制造：形成具有设置在被第一牺牲层覆盖的表面上的感测材料（3）的第一晶片，所述感测材料是 热敏电阻材料并限定至少一个像素; 为所述第一牺牲层内的所述至少一个像素提供支撑腿（7），用另一牺牲层覆盖所述支撑腿并在所述牺牲层的与所述支撑腿接触的表面中形成第一导电部分; 形成具有读出集成电路（ROIC）的第二晶片（9），所述第二晶片被第二牺牲层覆盖，在所述第二牺牲层中形成与所述ROIC接触的第二导电部分; 使第一晶片和第二晶片的牺牲氧化层一起使得第一和第二导电部分对准并将它们结合在一起，使得当第一晶片和第二晶片的牺牲体层 晶片被移除; 以及去除牺牲氧化物层以释放至少一个像素，使得支撑腿布置在其下方。

    Uncooled infrared detector and method for forming the same
    2.
    发明授权
    Uncooled infrared detector and method for forming the same 失效
    非制冷红外检测器及其制造方法

    公开(公告)号：EP0534768B1

    公开(公告)日：1996-05-15

    申请号：EP92308737.3

    申请日：1992-09-25

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Keenan, William F.

    IPC分类号： G01J5/20 ,  H01L27/146

    CPC分类号： H04N5/3656 ,  G01J5/20 ,  H01L27/1467 ,  H04N5/33 ,  H04N5/3651

    摘要： A method of detecting the intensity of radiation emanating from an object 116 relative to a background level at a pixel detector 120 is disclosed herein. A resistive element 122 with a resistance dependent upon the intensity of radiation impinging the detector 120 and having first and second terminals is provided along with an integration element 124 coupled to the first terminal of the resistive element. The first terminal is set to a reference voltage. The radiation is then defocused such that the radiation impinging the detector 120 is proportional to the background radiation level and a first voltage is applied to the second terminal of the resistive element 122 such that the integration element 124 discharges to a background voltage level. Next, the radiation is focused such that the radiation impinging the detector 120 is proportional to the radiation emanating from the object 116 and a second voltage is applied to the second terminal of the resistive element 122 such that the integration element 124 charges to an output voltage Vo level. The output voltage Vo is then sensed. Other systems and methods are also disclosed.

    Système de conversion d'une image infrarouge en image visible ou proche infrarouge
    4.
    发明公开
    Système de conversion d'une image infrarouge en image visible ou proche infrarouge 失效
    系统的红外图像的在可见或近红外区域中的转换为图像。

    公开(公告)号：EP0571268A1

    公开(公告)日：1993-11-24

    申请号：EP93401270.9

    申请日：1993-05-18

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

    发明人： Wolny, Michel ,  Amingual, Daniel

    IPC分类号： H01L31/147 ,  H01L31/153 ,  H01L25/16 ,  H01L27/15

    CPC分类号： H01L31/147 ,  H01L27/1465 ,  H01L27/1467 ,  H01L27/15 ,  H01L31/153 ,  H01L2224/16225 ,  H01L2924/10158 ,  H04N5/33

    摘要： Système de conversion d'une image infrarouge en image visible ou proche infrarouge.
    Ce système comprend des moyens optiques (8 à 14) d'entrée et de sortie, un détecteur infrarouge (16) sur lequel est formée une image infrarouge d'une scène, un circuit (18) de lecture des signaux fournis par ce détecteur, un circuit de traitement des signaux du circuit de lecture, un émetteur (22) de lumière visible ou proche infrarouge pour fournir ladite image sous forme de lumière visible ou proche infrarouge, à partir des signaux du circuit de traitement, un circuit (24) d'adressage de l'émetteur, un substrat (26) dont une face constitue un plan focal commun aux moyens optiques d'entrée et de sortie. Le détecteur, les circuits de lecture, de traitement, et d'adressage et l'émetteur sont intégrés dans ce plan focal. Application en imagerie infrarouge.

    摘要翻译： 系统转换为红外图像成可见光或近红外图像。 该系统包括光输入和输出装置（8至14），以在其上的场景的红外图像形成红外线检测器（16），电路（18），用于读取由该检测器提供的信号，用于处理所述的电路 从读出电路信号，对发射极（22）可见或近红外光的在可见光或近红外光的形式用于寻址发射器提供所述图像的基础上，从处理电路，一个电路（24）的信号 中，基片（26），一个面构成的光输入和输出装置的一个共同的焦平面中。 的检测器，所述读取，加工和寻址电路和发射极被集成在该焦平面上。 应用红外成像。

    Readout system and process for IR detector arrays
    9.
    发明公开
    Readout system and process for IR detector arrays 失效
    红外探测器阵列的读出系统和过程

    公开(公告)号：EP0534769A3

    公开(公告)日：1993-07-14

    申请号：EP92308738.1

    申请日：1992-09-25

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Keenan, William F.

    IPC分类号： H04N5/217 ,  H04N3/15 ,  H04N5/33

    CPC分类号： H04N5/3656 ,  G01J5/20 ,  H01L27/1467 ,  H04N5/33 ,  H04N5/3651

    摘要： A method of detecting the intensity of radiation emanating from an object 116 relative to a background level at a pixel detector 120 is disclosed herein. A resistive element 122 with a resistance dependent upon the intensity of radiation impinging the detector 120 and having first and second terminals is provided along with an integration element 124 coupled to the first terminal of the resistive element. The first terminal is set to a reference voltage. The radiation is then defocused such that the radiation impinging the detector 120 is proportional to the background radiation level and a first voltage is applied to the second terminal of the resistive element 122 such that the integration element 124 discharges to a background voltage level. Next, the radiation is focused such that the radiation impinging the detector 120 is proportional to the radiation emanating from the object 116 and a second voltage is applied to the second terminal of the resistive element 122 such that the integration element 124 charges to an output voltage V o level. The output voltage V o is then sensed. Other systems and methods are also disclosed.

    Uncooled infrared detector and method for forming the same
    10.
    发明公开
    Uncooled infrared detector and method for forming the same 失效
    UngekühlterInfrarot-Detektor und Herstellungsverfahren dazu。

    公开(公告)号：EP0534768A1

    公开(公告)日：1993-03-31

    申请号：EP92308737.3

    申请日：1992-09-25

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Keenan, William F.

    IPC分类号： G01J5/20 ,  H01L27/146

    CPC分类号： H04N5/3656 ,  G01J5/20 ,  H01L27/1467 ,  H04N5/33 ,  H04N5/3651

    摘要： A bolometer for detecting radiation in a spectral range is described herein. The bolometer includes an integrated circuit substrate 122 and a pixel body 120 spaced from the substrate 122 by at least one pillar 124. The pixel body 120 comprises an absorber material 132, such as titanium for example, for absorbing radiation in the spectral range, which may be 7 to 12 microns for example. The absorber material 132 heats the pixel body 120 to a temperature which is proportional to the absorbed radiation. An insulating material 134 is formed over the absorber material 132. In addition, a variable resistor material 136, possible amorphous silicon for example, with an electrical resistance corresponding to the temperature of the pixel body 120 is formed over said insulating layer 134. A current flows through the variable resistor material 136 substantially parallel to the integrated circuit substrate 122 for detection. Other systems and methods are also disclosed.

    摘要翻译： 本文描述了用于检测光谱范围内的辐射的测辐射热计。 测辐射热计包括集成电路基板122和通过至少一个支柱124与基板122间隔开的像素体120.像素体120包括吸收材料132，例如用于吸收光谱范围内的辐射的吸收材料132，例如钛， 例如可以为7至12微米。 吸收材料132将像素体120加热到与吸收的辐射成比例的温度。 绝缘材料134形成在吸收体材料132的上方。此外，可变电阻器材料136（例如可能的非晶硅）具有对应于像素体120的温度的电阻，形成在所述绝缘层134上。电流 流过基本上平行于集成电路衬底122进行检测的可变电阻器材料136。 还公开了其它系统和方法。