摘要:
Logic circuitry is implemented in a semiconductor device using decoupling diodes formed between active areas at or between levels of interconnect formed above a monocrystalline semiconductor substrate. Schottky transistor logic and other forms of bipolar logic can be fabricated with significant area reductions using output- decoupling diodes disposed at sites which are remote from the output nodes corresponding logic-gates.
摘要:
A temperature and process variation compensated TTL to ECL translator buffer includes an input voltage translator (2) and a reference voltage translator (14) formed on the same integrated circuit chip by the same process steps. The input voltage translator (2) and the reference voltage translator (14) each include the same number of forward biased diode voltage drops and base emitter voltage drops during operation and each forward biased junction is operated' at the same current density to cause the input voltage translator (2) and the reference voltage translator (14) to be equally affected by process and temperature variations thereby compensating for the variations.
摘要:
A transistor logic gate device with a transistor (Q6) coupled between the output terminal (9) and a node of the internal phase splitter subcircuit (4) to speed up switching without requiring an increase in internal current.
摘要:
A triple-state circuit comprising a logical high and a logical low signal circuit, an input over-ride and biasing circuit, a data input line and a data output line. The selective application of logical high data signals, logical low data signals and a high impedance to the data input line produces corresponding logical high data signals, logical low data signals and a high output impedance on the data output line. The input over-ride and biasing circuit in response to a control signal provides for a high output impedance on the data output line independent of the status of the signals on the data input line. When the above circuits are providing a high impendance on the data output line, the circuits also permit the coupling of signals to the date output line having amplitudes which exceed the magnitude of reference potentials used for providing the logical high and low data output signals on the data output line.
摘要:
A logic level translator having high switching speeds for converting ECL logic levels into TTL logic levels includes a pair of input transistors for receiving ECL input logic level signals and an output transistor for generating TTL output logic level signals. Current mirror transistors are interconnected between the input transistors and the output transistor for turning on and off the output transistor. High-pass networks are coupled to the current mirror transistors for increasing its transient response so as to facilitate turning on and off quickly the output transistor. The TTL output logic levels have a relatively small propagation delay responsive to transitions of the ECL input logic level signals.
摘要:
Circuitry for enhancing the ability of digital circuits to drive highly capacitive loads is disclosed. This circuitry has particular utility when employed with logic circuits such as "TTL" (Transistor- Transistor Logic) and "DTL" (Diode-Transistor Logic). The circuitry (15) comprises four transistors (T1, T2, T3A, T3B) and two resistors (Rl, R2), at least one of the transistors (T1, T3A) being connected as a diode.
摘要:
A novel output stage is provided for producing a TTL output signal in response to the differential output signals from an ECL switch. The output stage includes a translator portion to shift the levels of complementary signals produced by the ECL switch to the appropriate levels for use in driving a TTL output stage, a phase splitter circuit which is driven by the level shifted complementary output signals from the ECL stage and a single output lead. The currents through the level shifting transistors and resistors are controlled by a single current reference generator. The output signals from the translator circuit have voltage levels substantially independent of variations in the power supply voltage.