公开(公告)号：EP1600526A1

公开(公告)日：2005-11-30

申请号：EP04707650.0

申请日：2004-02-03

申请人： Nikko Materials Co., Ltd.

发明人： HOSONO, Hideo, c/o Tokyo Institute of Technology ,  UEDA, Kazushige, c/o Tokyo Institute of Technology ,  YAHAGI, Masataka, Materials Co., Ltd. ,  TAKAMI, Hideo, Materials Co., Ltd.

IPC分类号： C23C14/34

CPC分类号： C04B35/645 ,  C04B35/547 ,  C04B2235/3227 ,  C04B2235/446 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/3414 ,  Y10T428/12

摘要： A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850°C or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.

摘要翻译： 一种溅射靶的制造方法，其特征在于，具有通过烧结选自构成元素的基本物质，氧化物或硫属元素化合物的至少一种以上的粉末作为原料的含有含有La和Cu的氧化硫元素的溅射靶，其特征在于，包括将所述Ämaterial 在850℃以下的温度下，在烧结工序中1小时以上，其中，该反应工序后，在高于反应步骤温度的温度下进行加压烧结。 除了增加具有含有La和Cu的氧化硫化物的P型透明导电材料靶的密度以及能够以低制造成本扩大靶的情况外，可以消除靶中未反应物质的存在，生产率 可以通过抑制靶中的裂纹的产生来改善，并且还可以提高通过溅射这种靶所形成的沉积物的质量。

公开(公告)号：EP1574599A1

公开(公告)日：2005-09-14

申请号：EP03769899.0

申请日：2003-10-10

申请人： Nikko Materials Co., Ltd.

发明人： Kumagai, Masashi, c/o Isohara Plant ,  Hanafusa, Mikio, c/o GNF Plant

IPC分类号： C25D1/04 ,  C25D3/38

CPC分类号： C25D3/38 ,  C25D1/04 ,  Y10T428/12903

摘要： It is an object of the present invention to provide a copper electrolytic solution used to obtain a low-profile electrolytic copper foil with low surface roughness on the rough side (the opposite side from the glossy side) in the production of an electrolytic copper foil using a cathode drum, and more particularly to provide a copper electrolytic solution used to obtain an electrolytic copper foil that has excellent transmission loss characteristics at high frequency, can be finely patterned, and has excellent elongation and tensile strength both at ordinary temperature and high temperature. The copper electrolytic solution of the present invention contains as additives (A) at least one quaternary amine salt selected from the group consisting of (a) quaternary amine salts obtained by reaction between epichlorohydrin and an amine compound mixture composed of a secondary amine compound and a tertiary amine compound, and (b) polyepichlorohydrin quaternary amine salts, and (B) an organic sulfur compound.

摘要翻译： 本发明的目的是提供一种铜电解液，其用于在生产电解铜箔的粗糙侧（与光面相反的一侧）上获得具有低表面粗糙度的低调电解铜箔，其使用 更具体地说，提供用于获得在高频下具有优异的传输损耗特性的电解铜箔的铜电解液，可以精细地图案化，并且在常温和高温下都具有优异的伸长率和拉伸强度。 本发明的铜电解液含有作为添加剂（A）的至少一种季胺盐，其选自（a）通过表氯醇与由仲胺化合物和胺化合物组成的胺化合物混合物反应而得到的季胺盐 叔胺化合物和（b）聚表氯醇季胺盐，和（B）有机硫化合物。

公开(公告)号：EP1465242A4

公开(公告)日：2005-08-17

申请号：EP02786107

申请日：2002-12-17

申请人： NIKKO MATERIALS CO LTD

发明人： KURITA HIDEKI ,  NAKAMURA MASASHI

IPC分类号： H01L21/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/20 ,  H01L21/203 ,  H01L21/304 ,  H01L21/205

CPC分类号： H01L21/02021 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546

摘要： A semiconductor wafer W mirror finished at least on the major surface side following beveling at the wafer circumferential edge part. An inclining face 21 having an inclination angle theta of 5ring-25ring with respect to a major surface 10 and a length L of 100 mum or longer in the radial direction of the wafer is provided at the circumferential edge part of the wafer. Furthermore, the inclining face 21 has a non-mirror finish part 21b on the outer circumferential side of the wafer.

公开(公告)号：EP1553645A1

公开(公告)日：2005-07-13

申请号：EP03707039.8

申请日：2003-02-25

申请人： Nikko Materials Co., Ltd.

发明人： KAJIYA, Yoshio, c/o Petoca Materials Ltd ,  TASAKI, Hiroshi, c/o Petoca Materials Ltd

IPC分类号： H01M4/02 ,  H01M4/48 ,  H01M4/58 ,  H01M10/40 ,  C01G51/00

CPC分类号： H01M4/525 ,  C01G45/1242 ,  C01G51/42 ,  C01G51/54 ,  C01G53/42 ,  C01G53/44 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/88 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/131 ,  H01M4/364 ,  H01M4/366 ,  H01M4/485 ,  H01M4/505 ,  H01M10/052 ,  H01M2004/021

摘要： A positive plate material for lithium secondary cells stably exhibiting excellent performance including the cell initial capacity, cycle characteristics, and the safety. The material is procuded by dripping an aqueous solution of a salt (e.g., cobalt sulfate) of a doping element (e.g. a transition metal, an alkaline metal, an alkaline-earth metal, B, or Al) into an alkaline solution, a carbonate solution, or a hydrogencarbonate solution in any one of which a compound (e.g., manganese oxide) of a metal (Mn, Co, Ni, or the like) which is the major component of the positive plate material so as to precipitate the compound of the doping element on the major component and to cover the major component compound, mixing the major component compound covered with the doping element with a lithium compound (e.g., lithium carbonate), and firing the mixture.

公开(公告)号：EP1547974A1

公开(公告)日：2005-06-29

申请号：EP03795272.8

申请日：2003-09-01

申请人： Nikko Materials Co., Ltd.

发明人： ODA, K., Isohara Factory of Nikko Mat. Co., Ltd. ,  SUZUKI, R., Isohara Fact. of Nikko Mat. Co., Ltd.

IPC分类号： C01B33/06 ,  B22F1/00 ,  B22F9/04

CPC分类号： C01B33/06 ,  C23C14/3414

摘要： Provided is iron silicide powder in which the content of oxygen as the gas component is 1500ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi 2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

摘要翻译： 提供了作为气体成分的氧含量为1500ppm以下的铁硅化物粉末，以及制造这种硅化铁粉末的方法，其包括用氢还原氧化铁以制备铁粉的步骤，加热铁粉和Si粉末 在非氧化性气氛中制备含有FeSi作为其主要成分的合成粉末，再次将Si粉末加入并混合，并在非氧化性气氛中加热，制备含有FeSi 2作为其主要成分的硅化铁粉末。 作为硅化铁粉末中含有的气体成分的氧含量会降低，因此可以容易地粉碎铁硅化物粉末。 因此，当粉碎不令人满意时，杂质的混合物将被降低，硅化铁粉末的比表面积将增加，并且在烧结硅化铁粉末时可提高密度。

公开(公告)号：EP1541708A1

公开(公告)日：2005-06-15

申请号：EP03797517.4

申请日：2003-07-29

申请人： Nikko Materials Co., Ltd.

发明人： ODA, K., Isohara Fact. of Nikko, Materials Co, Ltd

IPC分类号： C23C14/34 ,  C22F1/18

CPC分类号： C22C27/02 ,  C22F1/18 ,  C23C14/3414 ,  Y10T29/49988

摘要： Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.

摘要翻译： 本发明提供一种具有晶体结构的钽溅射靶，其中（222）取向优先于目标厚度的10％的位置朝向靶的中心面，钽溅射靶的制造方法包括以下步骤 的锻造和再结晶退火，然后轧制，已经进行熔融浇铸的钽锭或坯料，并且形成其中（222）取向优先于目标厚度的10％朝向中心的晶体结构 面对目标。 结果，膜的均匀性（均匀性）得到提高，并且提高了溅射沉积的质量。

公开(公告)号：EP0872572B1

公开(公告)日：2005-06-15

申请号：EP98106493.4

申请日：1998-04-08

申请人： Nikko Materials Co., Ltd.

发明人： Yamakoshi, Yasuhiro, c/o Japan Energy Corp. ,  Miyashita, Hirohito, c/o Japan Energy Corp. ,  Seki, Kazuhiro, c/o Japan Energy Corp.

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/3414 ,  Y10T428/12993

公开(公告)号：EP1538237A1

公开(公告)日：2005-06-08

申请号：EP03788697.5

申请日：2003-08-05

申请人： Nikko Materials Co., Ltd.

发明人： IMORI, Toru, c/o Nikko Materials Co., Ltd. ,  YABE, Atsushi, c/o Nikko Materials Co., Ltd.

IPC分类号： C23C18/18

CPC分类号： C23C18/1879 ,  C23C18/1882 ,  C23C18/31 ,  C23C18/40

摘要： The object of the present invention to provide a metal plating method by a simple process, for example, on resins on which plating has been heretofore impossible. The metal plating method comprising surface treating an article to be plated with a liquid prepared by mixing or reacting in advance an organic acid salt of a silane coupling agent containing an azole in a molecule, for example, a coupling agent which is an equimolar reaction product of imidazole and γ-glycidoxypropyltrimethoxysilane, and a noble metal compound, and then conducting electroless plating thereon.

摘要翻译： 本发明的目的是通过简单的方法提供金属镀覆方法，例如在迄今为止不可能进行电镀的树脂上。 金属镀覆方法包括用预先将分子中含有唑的硅烷偶联剂的有机酸盐例如混合或反应制备的液体进行表面处理，例如偶联剂，其为等摩尔反应产物 的咪唑和γ-环氧丙氧基丙基三甲氧基硅烷，和贵金属化合物，然后在其上进行无电镀。

公开(公告)号：EP1537929A1

公开(公告)日：2005-06-08

申请号：EP03795273.6

申请日：2003-09-01

申请人： Nikko Materials Co., Ltd.

发明人： YAHAGI, Masataka, c/o Isohara Factory of Nikko ,  IMORI, Toru, c/o Isohara Factory of Nikko ,  NAKAMURA, Atsushi, c/o Isohara Factory of Nikko ,  NARUSAWA, Yasushi, c/o Nikko Materials Co. Ltd. ,  MASUDA, Seiji, c/o Nikko Materials Co. Ltd.

IPC分类号： B22F1/00 ,  B22F3/02

CPC分类号： C22C33/0264 ,  B22F1/0059 ,  B22F1/007 ,  B22F2998/00 ,  C22C33/02 ,  C22C38/002 ,  C22C38/04 ,  C22C38/08 ,  C22C38/10 ,  C22C38/16

摘要： Provided is metallic powder for powder metallurgy having iron as its principal component and containing indium soap, or metallic powder for powder metallurgy further comprising at least one type selected among bismuth soap, nickel soap, cobalt soap, copper soap, manganese soap and aluminum soap in such indium soap. Thereby obtained is metallic powder for powder metallurgy capable of easily improving the rustproof effect without having to hardly change the conventional process.

摘要翻译： 本发明提供以铁为主要成分并含有铟皂的粉末冶金用金属粉末，或粉末冶金用金属粉末，还含有选自铋皂，镍皂，钴皂，铜皂，锰皂，铝皂中的至少一种 这样的铟皂。 由此得到的粉末冶金用金属粉末能够容易地提高防锈效果，而不需要改变常规方法。

公开(公告)号：EP1533834A1

公开(公告)日：2005-05-25

申请号：EP02807525.7

申请日：2002-10-16

申请人： Nikko Materials Co., Ltd.

发明人： SHIMIZU, Eiichi,2NIKKO MATERIALS CO., LTD. ,  MAKINO, Nobuhito, NIKKO MATERIALS CO., LTD.

IPC分类号： H01L21/205

CPC分类号： C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012 ,  Y10T117/1016

摘要： A vapor-phase growth apparatus includes: a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes: a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section, for transmitting heat to the wafer disposed in the space; and contact heat resistance R g between the heat flow control section and the heat flow transmitting section is not less than 1.0x10 -6 m 2 K/W to not more than 5.0x10 -3 m 2 K/W, and the heat flow control section is made of a material having a coefficient of thermal conductivity which is not less than 5 times to not more than 20 times that of the wafer disposed on the heat flow transmitting section.

摘要翻译： 气相生长装置包括：能够密闭的反应炉，配置在反应炉内，用于将晶片配置在规定位置的晶片容器，用于向晶片供给原料气体的气体供给部件，以及 用于加热晶片的加热元件，其中该装置被设计成通过供应处于高温状态的源气体而在晶片的前表面上形成生长膜，同时加热元件通过晶片容器加热反应炉中的晶片 。 晶片容器包括：具有用于放置晶片的空间的热流控制部分; 以及与热流控制部分连接的热流传送部分，用于将热量传送到设置在该空间中的晶片; 所述热流量控制部与所述热流量传递部之间的接触热阻Rg为1.0×10-6m2K / W以上且5.0×10-3m2K / W以下，所述热流量控制部由 其热传导系数不小于布置在热流传导部分上的晶片的5倍至不大于20倍的材料。