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公开(公告)号：EP0645476B1
公开(公告)日：2001-04-04
申请号：EP94306449.3
申请日：1994-09-01
摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100 DEG C but below 2050 DEG C, the melting point of alumina.
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公开(公告)号：EP0645476A3
公开(公告)日：1996-04-03
申请号：EP94306449.3
申请日：1994-09-01
摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.
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23.发明公开Conversion of doped polycrystalline material to single crystal material 失效Umwandlung eines dotierten polykristallinen材料在einen Einkristall。
公开(公告)号：EP0667404A1
公开(公告)日：1995-08-16
申请号：EP95300260.7
申请日：1995-01-17
摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
摘要翻译： 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤：用转化增强掺杂剂掺杂多晶陶瓷材料，然后在所选择的温度下加热多晶体一段足以将多晶体 到单晶。 所选择的温度小于多晶材料的熔化温度，并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝（蓝宝石）时，转化增强掺杂剂的实例包括具有+3价的阳离子，例如铬，镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分，使得加热掺杂的多晶体导致第一部分的转化 涉及单晶结构，第二部分保留多晶结构。
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24.发明公开Solid state process for the conversion of a polycrystallic ceramic material to a single crystal, particulary sapphir 失效对于多晶陶瓷材料转化成单晶，特别是蓝宝石固态方法。
公开(公告)号：EP0625594A2
公开(公告)日：1994-11-23
申请号：EP94303398.5
申请日：1994-05-11
发明人： Maxwell, Randolph E. , Scott, Curtis Edward , Kaliszewski, Mary Sue , Jones, Marshall Gordon , Levinson, Lionel Monty , Erikson, Carl Edward
摘要： A process for bulk conversion of a solid polycrystalline ceramic body to a single crystal body which comprises heating only a portion of said polycrystalline ceramic body with a localized energy source, without melting the entire said polycrystalline ceramic body, at a temperature and for a time sufficient to convert said polycrystalline ceramic body to said single crystal body.
In one embodiment of the invention, a dense polycrystalline alumina (PCA) article is converted to sapphire via a solid state conversion process.
A CO₂ laser energy source has been successfully employed as a localized energy source.摘要翻译： 多晶氧化铝体已通过其中的局部能量源用于只是身体的一部分加热到使用激光以上1800℃的温度下作为能量源导致转换成兰宝石的固态转化方法转化为蓝宝石 在不到一个小时。 的多晶氧化铝体有氧化镁含量低于50wppm的，低于100微米的平均晶粒尺寸，并且密度大于3.97克/立方厘米。
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25.发明公开Infrared radiation curable organopolysiloxane compositions 失效Durch InfrarotstrahlunghärtbareOrganopolysiloxan-Zusammensetzungen。
公开(公告)号：EP0597613A1
公开(公告)日：1994-05-18
申请号：EP93308698.5
申请日：1993-11-01
发明人： Levinson, Lionel Monty , Lewis, Larry Neil , Zumbrum, Michael Allen , Schultz, William Newell , Sumpter, Chris Allen
IPC分类号： C08L83/04
CPC分类号： C08L83/04 , C08G77/12 , C08G77/20 , C08L83/00 , C08L2666/52 , C08L2666/54 , C08L2666/28
摘要： There is provided an infrared radiation curable organopolysiloxane composition having a poly(alkenylorganosiloxane), a siloxane hydride, an infrared radiation absorbent material, such as carbon black, and an effective amount of a platinum group metal catalyst. The infrared radiation curable organopolysiloxane composition can be used as a binder for a desiccant, such as a zeolite, useful in making multi-panel thermal pane windows.
摘要翻译： 提供了具有聚（烯基有机硅氧烷），硅氧烷氢化物，红外线吸收材料如炭黑的红外辐射可固化的有机聚硅氧烷组合物和有效量的铂族金属催化剂。 可红外线辐射固化的有机基聚硅氧烷组合物可用作用于制造多面板热窗玻璃窗的干燥剂如沸石的粘合剂。
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26.发明公开Method for making a spacer element for a multi-pane sealed window 失效Verfahren zur Herstellung eines DistanzelementsfürThermopenfenster。
公开(公告)号：EP0596677A1
公开(公告)日：1994-05-11
申请号：EP93308700.9
申请日：1993-11-01
发明人： Levinson, Lionel Monty , Schultz, William Newell , Lewis, Larry Neil , Sumpter, Chris Allen , Stein, Judith , Zumbrum, Michael Allen
IPC分类号： E06B3/66
CPC分类号： E06B3/677 , C03C27/06 , C08G77/20 , C08K3/013 , C08K3/04 , C08L83/04 , E06B3/66361 , E06B2003/66395 , C08L83/00 , C08L2666/54
摘要： A method is provided for making a rigid spacer, containing a silicone bound desiccant which is useful for a multi-pane sealed window. An infrared radiation curable silicone is used as a binder for a desiccant such as a zeolite which is injected in a continuous manner into a U-shaped or V-shaped semi-rigid spacer such as a steel channel.
摘要翻译： 提供了一种用于制造刚性间隔物的方法，其包含可用于多窗玻璃密封窗的有机硅结合干燥剂。 使用红外辐射固化型硅酮作为干燥剂如沸石的粘合剂，所述干燥剂以连续方式注入到诸如钢通道的U形或V形半刚性间隔物中。
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