Solid state thermal conversion of polycrystalline alumina to sapphire
    2.
    发明公开
    Solid state thermal conversion of polycrystalline alumina to sapphire 失效
    Thermische Feststoff-Umwandlung von polykristallinem Aluminiumoxid in einen Saphir。

    公开(公告)号:EP0645476A2

    公开(公告)日:1995-03-29

    申请号:EP94306449.3

    申请日:1994-09-01

    IPC分类号: C30B29/20 C30B1/02

    CPC分类号: C30B1/02 C30B29/20

    摘要: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.

    摘要翻译: 通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度,已经实现了将致密多晶陶瓷体大量转化成单晶体的固态方法。 由于该方法是固态工艺,因此不需要熔化陶瓷体以将其转化为单晶。 该方法已被用于通过将PCA加热至高于1100℃但低于2050℃的温度将氧化铝含量低于100wppm的致密多晶氧化铝体(PCA)转化为蓝宝石(单晶氧化铝),氧化铝的熔点 。

    ARC tube and ARC discharge lamp
    4.
    发明公开
    ARC tube and ARC discharge lamp 失效
    Bogenröhreund Entladungslampe。

    公开(公告)号:EP0583122A1

    公开(公告)日:1994-02-16

    申请号:EP93306082.4

    申请日:1993-08-02

    IPC分类号: H01J61/35

    摘要: An arc tube (14) of fused silica for a metal halide arc discharge lamp including a fill for the arc tube comprised of a sodium halide, at least one additional metal halide, and an inert starting gas, the arc tube (14) including a tube of fused silica having an inner wall defining an arc chamber, the inner wall of the tube having provided thereon a metal silicate coating (14a) which is vitreous and light-transmissive, and which is comprised of a silicate of at least one metal selected from the group consisting essentially of scandium, yttrium, and a rare earth element, and preferably which is the same metal as that of the at least one additional metal halide. Protection of the fused silica arc tube (14) with the metal silicate coating reduces loss of the metallic portion of the fill by diffusion or reaction and corresponding buildup of free halogen in the arc tube (14).

    摘要翻译: 一种用于金属卤化物电弧放电灯的熔融二氧化硅的电弧管(14),包括由卤化钠,至少一种另外的金属卤化物和惰性起始气体构成的电弧管的填充物,所述电弧管(14)包括 所述熔融石英管具有限定电弧室的内壁,所述管的内壁上设置有玻璃质和透光性的金属硅酸盐涂层(14a),所述金属硅酸盐涂层(14a)由至少一种选自金属的硅酸盐 从基本上由钪,钇和稀土元素组成的组中,优选与至少一种另外的金属卤化物相同的金属。 用金属硅酸盐涂层保护熔融二氧化硅发光管(14)通过扩散或反应减少了填充物的金属部分的损失,并且在电弧管(14)中相应地形成了游离卤素。

    High transmittance alumina for ceramic metal halide lamps
    5.
    发明公开
    High transmittance alumina for ceramic metal halide lamps 审中-公开
    铝氧化物薄膜

    公开(公告)号:EP1243570A2

    公开(公告)日:2002-09-25

    申请号:EP02251950.8

    申请日:2002-03-19

    摘要: A high transmittance polycrystalline alumina arc tube for a metal halide discharge lamp is formed by treating an alumina arc tube material having a few percent of closed porosity in a two step process, which provides a high-transmittance arc tube. An initially porous arc tube is formed by extruding or die pressing individual components of the tube from a mixture which includes powdered alumina, assembling the components into an arc tube body, and then partially sintering the components to seal them together. The two step process includes hot isostatic pressing of the partially sintered arc tube and then chemically polishing the surface of the tube. The first, pressing step involves heating the alumina arc tube in an inert atmosphere, such as argon, at a temperature of 1600 to 1900°C and a pressure of about 700 to 2100 kg/sq.cm. for from about one to three hours. This reduces porosity in the crystalline structure. In the second step, the surface of the tube is immersed in a flux comprising a molten alkali metal borate at moderately elevated temperatures, or coated with a flux material which is heated to form the flux, to remove surface imperfections. The finished arc tube has transmittance values which approach those of single crystal sapphire arc tubes.

    摘要翻译: 用于金属卤化物放电灯的高透光率多晶氧化铝电弧管通过在两步法中处理具有少百分比的闭孔率的氧化铝弧管材料形成,其提供高透光率的电弧管。 通过从包括粉末状氧化铝的混合物挤出或模压管子的各个部件形成最初多孔的电弧管,将组件组装成电弧管体,然后部分烧结组件以将它们密封在一起。 两步法包括热等静压部分烧结的电弧管,然后化学抛光管的表面。 第一个压制步骤包括在惰性气氛如氩气中,在1600至1900℃的温度和约700至2100kg / sq.cm的压力下加热氧化铝弧光管。 约一到三个小时。 这降低了晶体结构中的孔隙率。 在第二步骤中,将管的表面在适度升高的温度下浸入包含熔融碱金属硼酸盐的焊剂中,或者涂覆有加热以形成焊剂的焊剂材料,以去除表面缺陷。 完成的电弧管具有接近单晶蓝宝石电弧管的透射率值。

    Conversion of doped polycrystalline material to single crystal material
    6.
    发明授权
    Conversion of doped polycrystalline material to single crystal material 失效
    掺杂多晶材料转化成单晶

    公开(公告)号:EP0667404B1

    公开(公告)日:1998-06-03

    申请号:EP95300260.7

    申请日:1995-01-17

    IPC分类号: C30B29/20 C30B1/00

    CPC分类号: C30B1/00 C30B29/20

    摘要: A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

    High transmittance alumina for ceramic metal halide lamps
    7.
    发明公开
    High transmittance alumina for ceramic metal halide lamps 审中-公开
    具有用于陶瓷金属卤化物灯高传输氧化铝

    公开(公告)号:EP1243570A3

    公开(公告)日:2003-07-16

    申请号:EP02251950.8

    申请日:2002-03-19

    摘要: A high transmittance polycrystalline alumina arc tube for a metal halide discharge lamp is formed by treating an alumina arc tube material having a few percent of closed porosity in a two step process, which provides a high-transmittance arc tube. An initially porous arc tube is formed by extruding or die pressing individual components of the tube from a mixture which includes powdered alumina, assembling the components into an arc tube body, and then partially sintering the components to seal them together. The two step process includes hot isostatic pressing of the partially sintered arc tube and then chemically polishing the surface of the tube. The first, pressing step involves heating the alumina arc tube in an inert atmosphere, such as argon, at a temperature of 1600 to 1900°C and a pressure of about 700 to 2100 kg/sq.cm. for from about one to three hours. This reduces porosity in the crystalline structure. In the second step, the surface of the tube is immersed in a flux comprising a molten alkali metal borate at moderately elevated temperatures, or coated with a flux material which is heated to form the flux, to remove surface imperfections. The finished arc tube has transmittance values which approach those of single crystal sapphire arc tubes.

    Solid state thermal conversion of polycrystalline alumina to sapphire
    8.
    发明授权
    Solid state thermal conversion of polycrystalline alumina to sapphire 失效
    在蓝宝石的多晶氧化铝的热固态转换

    公开(公告)号:EP0645476B1

    公开(公告)日:2001-04-04

    申请号:EP94306449.3

    申请日:1994-09-01

    IPC分类号: C30B29/20 C30B1/02

    CPC分类号: C30B1/02 C30B29/20

    摘要: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100 DEG C but below 2050 DEG C, the melting point of alumina.

    Solid state thermal conversion of polycrystalline alumina to sapphire
    9.
    发明公开
    Solid state thermal conversion of polycrystalline alumina to sapphire 失效
    在蓝宝石的多晶氧化铝的热固态转换。

    公开(公告)号:EP0645476A3

    公开(公告)日:1996-04-03

    申请号:EP94306449.3

    申请日:1994-09-01

    IPC分类号: C30B29/20 C30B1/02

    CPC分类号: C30B1/02 C30B29/20

    摘要: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.

    Conversion of doped polycrystalline material to single crystal material
    10.
    发明公开
    Conversion of doped polycrystalline material to single crystal material 失效
    Umwandlung eines dotierten polykristallinen材料在einen Einkristall。

    公开(公告)号:EP0667404A1

    公开(公告)日:1995-08-16

    申请号:EP95300260.7

    申请日:1995-01-17

    IPC分类号: C30B29/20 C30B1/00

    CPC分类号: C30B1/00 C30B29/20

    摘要: A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

    摘要翻译: 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤:用转化增强掺杂剂掺杂多晶陶瓷材料,然后在所选择的温度下加热多晶体一段足以将多晶体 到单晶。 所选择的温度小于多晶材料的熔化温度,并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝(蓝宝石)时,转化增强掺杂剂的实例包括具有+3价的阳离子,例如铬,镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分,使得加热掺杂的多晶体导致第一部分的转化 涉及单晶结构,第二部分保留多晶结构。