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24 条记录 (耗时 0.012 秒)

    Data storage using state transformable materials
    23.
    发明公开
    Data storage using state transformable materials 失效
    Datenspeicherung auf phasen-veränderbarenMaterialien。

    公开(公告)号：EP0335487A2

    公开(公告)日：1989-10-04

    申请号：EP89301413.4

    申请日：1989-02-15

    申请人： International Business Machines Corporation

    发明人： Foster, John Stuart ,  Rubin, Kurt Allan ,  Rugar, Daniel

    IPC分类号： G11B9/00

    CPC分类号： G11B9/14 ,  B82Y10/00 ,  G11B9/1472 ,  G11B9/149 ,  Y10S977/947

    摘要： A method for recording, reading and erasing data bits in a data storage device is described. Using extended scanning tunnelling microscopy (STM) techniques, a tunnelling electron current by resistive heating selectively melts discrete areas of a state-transformable film; then heat is dissipated rapidly, writing data bits by changing the film in the areas from a first state to a second state wherein an electronic property, such as conductance, work function or band gap, in the areas is changed. Again, using extended STM techniques, the effect of this changed electronic property of the film on the tunnelling current is measured for reading the written data bits. Minimising the effect of blemishes on the material is effected, during operation in STM constant current mode by measuring dI/dV or dI/ds, and during operation in STM variable current (constant gap) mode by measuring (dI/dV)/I or (dI/ds)/I. Also, by using extended STM techniques, data bits can be selectively erased by resistance heating the film to a temperature higher than the crystallisation temperature for a sufficient period of time, restoring selected discrete areas to the first state and each affected electronic property substantially to its original condition.

    摘要翻译： 描述了一种在数据存储设备中记录，读取和擦除数据位的方法。 使用扩展扫描隧道显微镜（STM）技术，通过电阻加热的隧穿电子电流选择性地熔化状态转换膜的离散区域; 然后热量快速耗散，通过改变从第一状态到第二状态的区域中的胶片来写入数据位，其中区域中的电子性能，功能函数或带隙等电子性质改变。 再次，使用扩展的STM技术，测量这种改变的电子电子特性对隧道电流的影响，以读取写入的数据位。 通过测量dI / dV或dI / ds，以及在STM可变电流（恒定间隙）模式下操作期间，通过测量（dI / dV）/ I或 （DI / DS）/ I。 此外，通过使用扩展的STM技术，可以通过将膜加热到高于结晶温度的温度持续足够的时间段来将数据位选择性地擦除，将选定的离散区域恢复到第一状态，并将每个受影响的电子特性基本上恢复到其 原始条件

    A method of optical recording
    24.
    发明公开
    A method of optical recording 失效
    Optisches Aufzeichnungsverfahren。

    公开(公告)号：EP0212336A1

    公开(公告)日：1987-03-04

    申请号：EP86110279.6

    申请日：1986-07-25

    申请人： International Business Machines Corporation

    发明人： Barton, Roger Westwood ,  Chen, Martin Yu-Wen ,  Davis, Charles Raymond ,  Lim, Grace Su ,  Marrello, Vincent Nmn ,  Rubin, Kurt Allan

    IPC分类号： G11B7/24

    CPC分类号： G11B7/00454 ,  G11B7/243 ,  G11B7/2533 ,  G11B7/2548 ,  G11B7/257 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316

    摘要： A method of optical recording uses a film of a material which has a crystallisation temperature between 100°C and 400°C and can be switched between the amorphous and the crystalline states. Both the amorphous and crystalline states are substantially a single phase where the stoichiometric ratio of the material remains unchanged. A spot on the film is heated with a laser beam with a controlled pulse duration and intensity to melt the material in the spot. When the laser irradiation is stopped, the material in that spot is quenched at a rate that produces the desired state, that is, either to the crystalline or the amorphous state.

    摘要翻译： 光学记录方法使用具有100℃至400℃之间的结晶温度并可在无定形状态和结晶状态之间切换的材料的膜。 无定形和晶态均基本上是单相，其中材料的化学计量比保持不变。 用激光束加热膜上的斑点，其脉冲持续时间和强度受到控制，以熔化现场的材料。 当激光照射停止时，该点中的材料以产生所需状态的速率淬火，即结晶或非晶状态。