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公开(公告)号：EP0635854A1
公开(公告)日：1995-01-25
申请号：EP94111254.2
申请日：1994-07-19
CPC分类号： C04B35/2641 , H01F1/346
摘要： A magnetic material for high frequencies consists essentially of a main component expressed by the general formula:
(Y 3-2z Ca 2z )(Fe w-x-y-z In x Al y V z )O 4.5+1.5w
where x, y, z and w take respective values within the following ranges: 0.02 ≦ x ≦ 0.80, 0.00 ≦ y ≦ 0.10, 0.30 ≦ z ≦ 0.50, 4.88 ≦ w ≦ 4.92, and an additional component composed of at least one oxide selected from the group consisting of CeO₂, TiO₂, ZrO₂, SnO₂ and HfO₂. The additional component is incorporated into the main component in an amount of not less than 0.1 percent by weight but not more than 0.5 percent by weight.摘要翻译： 用于高频的磁性材料基本上由由以下通式表示的主要组分组成：（Y3-2zCa2z）（Few-xy-zInxAlyVz）O4.5 + 1.5w其中x，y，z和w取以下相应的值 范围：0.02
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公开(公告)号：EP0606867A1
公开(公告)日：1994-07-20
申请号：EP94100238.8
申请日：1994-01-10
发明人： Fujii, Takashi , Takagi, Hiroshi
CPC分类号： H01F41/28 , H01F10/245 , H03H2/001
摘要： A material for magnetostatic wave elements consists essentially of a magnetic single-crystal garnet and at least one element of the halogen group incorporated therein, and has a composition expressed by the general formula:
Y³⁺₃(Fe²⁺ x Fe³⁺ 5-x )O 12-x X⁻¹ x , or
(Y³⁺ 3-m M m ) (Fe²⁺ x Fe³⁺ 5-x-n M' n )O 12-x X⁻¹ x
where M is at least one trivalent element, M' is at least one element of trivalent or divalent metals, X is at least one element of halogen group, 0摘要翻译： 用于静磁波元件的材料主要由磁性单晶石榴石和其中掺入的卤素基团的至少一个元素组成，并具有由以下通式表示的组成：Y 3+ 3（Fe 2） （Fe 3+）x Fe 3（x 3+）5-x）O 12-x X 1 x或（Y 3+ 其中M是至少一个三价元素，M'是三价或二价金属的至少一种元素，X是至少一种元素的三价或二价金属，X是至少一种元素， 卤素基团，0
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公开(公告)号：EP0354353B1
公开(公告)日：1994-02-09
申请号：EP89112437.2
申请日：1989-07-07
发明人： Mori, Yoshiaki , Takagi, Hiroshi , Sakabe, Yukio
CPC分类号： H01G4/1254 , B32B18/00 , C04B35/499 , C04B2235/6567 , C04B2235/6582 , C04B2237/34 , C04B2237/66 , C04B2237/68
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公开(公告)号：EP0522388A1
公开(公告)日：1993-01-13
申请号：EP92110931.0
申请日：1992-06-27
CPC分类号： H03H2/001 , H01F10/245 , H01F10/28
摘要： A magnetostatic wave device comprises a magnetic garnet film epitaxially grown on a Gd₃Ga₂(GaO₄)₃ substrate. The film is of a composition of a system (Y,Gd)₃Fe₅O₁₂ and has the lattice constant substantially equal to that of the substrate, the difference in lattice constant between the substrate and film being not more than 0.01 Å. The composition may be modified with a small amount of at least one element selected from the group consisting of Bi, Ga and Al.
摘要翻译： 静磁波器件包括在Gd3Ga2（GaO4）3衬底上外延生长的磁性石榴石膜。 该膜是系统（Y，Gd）3Fe 5 O 12的组成，其晶格常数基本上等于衬底的晶格常数，衬底和膜之间的晶格常数差不超过0.01安培。 该组合物可以用少量选自Bi，Ga和Al中的至少一种元素进行改性。
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公开(公告)号：EP0773594B1
公开(公告)日：1999-07-21
申请号：EP96117960.3
申请日：1996-11-08
发明人： Hayashi, Kohichi , Ando, Akira , Nagai, Akira , Takagi, Hiroshi , Hase, Kiyoshi
IPC分类号： H01L41/187
CPC分类号： H01L41/187
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26.发明公开Inorganic composition for low temperature firing 失效Aorganische Zusammensetzung mit niedriger Brenntemperatur
公开(公告)号：EP0820965A1
公开(公告)日：1998-01-28
申请号：EP97112754.3
申请日：1997-07-24
CPC分类号： C03C14/004 , C03C8/14 , C03C2214/04 , C03C2214/20 , C03C2214/30 , H05K1/0306
摘要： An inorganic composition for low temperature firing comprising about 15 to 40 weight % of glass powder and about 60 to 85 weight % of cordierite, is disclosed. The glass powder is composed of about 20 to 60 weight % of SiO 2 , about 30 to 50 weight % of B 2 O 3 , about 5 to 30 weight % of MgO, 0 to about 15 weight % of Al 2 O 3 , and about 1 to 5 weight % of R 2 O (R is alkali metal). The inorganic composition is capable of being fired at a relatively low temperature, and has a low thermal expansion coefficient and permittivity, as well as high mechanical strength.
摘要翻译： 公开了一种用于低温焙烧的无机组合物，其包含约15至40重量％的玻璃粉末和约60至85重量％的堇青石。 玻璃粉末由约20〜60重量％的SiO 2，约30〜50重量％的B 2 O 3，约5〜30重量％的MgO，0〜约15重量％的Al 2 O 3和1〜5重量％ R2O（R为碱金属）。 无机组合物能够在相对低的温度下焙烧，并且具有低的热膨胀系数和介电常数以及高的机械强度。
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27.发明公开
公开(公告)号：EP0799808A1
公开(公告)日：1997-10-08
申请号：EP97104307.0
申请日：1997-03-13
摘要： A semiconducting ceramic compound has negative resistance-temperature characteristics with a critical temperature and consists essentially of a rare-earth transition element oxide which is SmNiO 3 . Samarium contained in SmNiO 3 may be partially replaced by a group of elements selected from praseodymium, neodymium, europium, gadolinium, yttrium, dysprosium and bismuth.
The resistivity of this semiconducting ceramic compound sharply drops beyond a specific critical temperature and such critical temperature can be freely set to a desired level.摘要翻译： 甲半导体陶瓷化合物具有负电阻 - 温度特性与临界温度和本质上besteht稀土类过渡元素氧化物，所有这些是SmNiO3。 包含在SmNiO3钐可以由一组由镨，钕，铕，钆，钇，镝和铋中选择的元素部分置换。 这种半导体陶瓷化合物的电阻率急剧下降超过一个特定临界温度和这样临界温度可以自由地设定为所希望的水平。
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28.发明公开Semiconductive ceramic composition having negative temperature coefficient of resistance 失效Keramische Halbleiterzusammensetzung aus negativem Widerstandstemperaturkoeffizient
公开(公告)号：EP0789366A2
公开(公告)日：1997-08-13
申请号：EP97101908.8
申请日：1997-02-06
IPC分类号： H01C7/04
CPC分类号： H01C7/043
摘要： The present invention provides a semiconductive ceramic composition comprising a lanthanum cobalt oxide and having a negative resistance-temperature characteristic, characterised in that the semiconductive ceramic composition comprises a chromium oxide in an amount of from 0.005 to 30 mol% in terms of chromium as the side component, and also provides use of the semiconductive ceramic composition for a semiconductive ceramic device. The device is usable for rush current inhibition, for motor start-up retardation and for halogen lamp protection, and is also usable in temperature-compensated crystal oscillators.
摘要翻译： 本发明提供一种包含氧化镧钴并具有负电阻温度特性的半导体陶瓷组合物，其特征在于，所述半导体陶瓷组合物包含以铬作为侧面的0.005至30mol％的量的氧化铬 组分，并且还提供了半导体陶瓷组合物用于半导体陶瓷器件的用途。 该装置可用于冲击电流抑制，电机启动延迟和卤素灯保护，也可用于温度补偿晶体振荡器。
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公开(公告)号：EP0785618A1
公开(公告)日：1997-07-23
申请号：EP97100546.7
申请日：1997-01-15
CPC分类号： H01F41/28 , H01F10/245 , H03H2/001 , Y10S428/90
摘要： The present invention provides a magnetostatic wave device which comprises a single-crystal substrate having the formula Gd 3 Ga 5 O 12 ,and a single-crystal thin film having the formula Y 3-x M x Fe 5-y N y O 12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0
It has good characteristic properties (e.g., low insertion loss and ripple).摘要翻译： 本发明提供了一种静磁波器件，其包括具有式Gd3Ga5O12的单晶衬底和具有式Y3-xMxFe5-yNyO12（其中M表示选自La，Bi，Lu中的至少一种的单晶薄膜） ，并且Gd，N表示选自Al，In和Sc中的至少一个成员，并且x和y分别定义为所述单晶衬底上的0
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公开(公告)号：EP0635855A1
公开(公告)日：1995-01-25
申请号：EP94111255.9
申请日：1994-07-19
CPC分类号： H01F1/346 , C04B35/2641
摘要： A magnetic material for high frequencies consists essentially of a main component expressed by the general formula:
(Y 3-x-2z Ca x+2z )(Fe w-x-y-z Sn x Al y V z )O 4.5+1.5w
where x, y, z and in take respective values within the following ranges: 0.10 ≦ x ≦ 0.60, 0.00 ≦ y ≦ 0.20, 0.20 ≦ z ≦ 0.60, 4.88 ≦ w ≦ 4.92, and an additional component of CeO₂ incorporated therein in an amount of not less than 0.1 wt% but not more than 0.5 wt%.摘要翻译： 用于高频的磁性材料主要由以下通式表示的主要成分组成：（Y 3-x-2zCax + 2z）（Few-xy-zSnxAlyVz）O4.5 + 1.5w，其中x，y，z分别为 值在以下范围内：0.10
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