Abstract:
A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.
Abstract:
An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.
Abstract:
A compound for an organic photoelectric device represented by Chemical Formula 1, and an organic photoelectric device, an image sensor and an electronic device include the same.
Abstract:
An organic photoelectronic device includes an anode (10) and a cathode (20) facing each other, a light-absorption layer (30) between the anode and the cathode, and a first auxiliary layer (40) between the cathode and the light-absorption layer, the first auxiliary layer having an energy bandgap of about 3.0 eV to about 4.5 eV, and a difference between a work function of the cathode and a highest occupied molecular orbital (HOMO) energy level of the first auxiliary layer is about 1.5 eV to about 2.0 eV.
Abstract:
A sensor-embedded display panel includes a substrate (110), a light emitting element (210, 220, 230) on the substrate and including a light emitting layer (212, 222, 232), and a photosensor (300) on the substrate and including a photoelectric conversion layer (330) in parallel with the light emitting layer (212, 222, 232) along an in-plane direction of the substrate, wherein the light emitting element (210, 220, 230) and the photosensor (300) each include a separate portion of a first common auxiliary layer (340) that is a single piece of material that extends continuously on the light emitting layer (212, 222, 232) and the photoelectric conversion layer (330), and a separate portion of a common electrode (320) on the first common auxiliary layer (340) and is configured to apply a common voltage to both the light emitting element (210, 220, 230) and the photosensor (330), and the photoelectric conversion layer (330) includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.
Abstract:
A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.
Abstract:
A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same:
In Chemical Formula 1, each substituent is the same as defined in the detailed description.
Abstract:
An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.
Abstract:
A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:
In Chemical Formula 1, the definition of each substituent is as described in the detailed description.