IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    3.
    发明公开
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开
    图像传感器和包括相同的电子设备

    公开(公告)号:EP3270419A3

    公开(公告)日:2018-03-21

    申请号:EP17180824.9

    申请日:2017-07-11

    IPC分类号: H01L27/146

    摘要: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

    摘要翻译: 一种图像传感器包括多个像素,每个像素包括光感测结构,所述光感测结构包括顺序地堆叠在衬底上的第一,第二和第三光感测元件,所述光感测结构具有与读出电路相邻的第一表面和包括 光接收部分,位于第一和第二圆周部分之间;第一圆周部分上的第一通孔,从第一表面延伸以与第一光感测元件连接,并且被配置为将第一光感测元件的电荷转移到读出电路; 以及在第二圆周部分上的垂直传输门,并且被配置为将第二光感测元件的电荷传输到读出电路,每个像素的第一通孔和垂直传输门布置成1形或L形图案 在第一和第二圆周部分中。

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    6.
    发明公开
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开
    ORGANISCHE FOTOELEKTRONISCHE VORRICHTUNG UND BILDSENSOR

    公开(公告)号:EP3136460A3

    公开(公告)日:2017-03-08

    申请号:EP16172269.9

    申请日:2016-05-31

    IPC分类号: H01L51/42 H01L27/30

    摘要: An organic photoelectronic device includes an anode (10) and a cathode (20) facing each other, a light-absorption layer (30) between the anode and the cathode, and a first auxiliary layer (40) between the cathode and the light-absorption layer, the first auxiliary layer having an energy bandgap of about 3.0 eV to about 4.5 eV, and a difference between a work function of the cathode and a highest occupied molecular orbital (HOMO) energy level of the first auxiliary layer is about 1.5 eV to about 2.0 eV.

    摘要翻译: 有机光电子器件包括阳极(10)和彼此面对的阴极(20),阳极和阴极之间的光吸收层(30)和阴极和发光体之间的第一辅助层(40) 吸收层,第一辅助层具有约3.0eV至约4.5eV的能带隙,并且第一辅助层的阴极功函数和最高占据分子轨道(HOMO)能级之间的差为约1.5eV 至约2.0eV。

    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES

    公开(公告)号:EP3696857A1

    公开(公告)日:2020-08-19

    申请号:EP19206155.4

    申请日:2019-10-30

    摘要: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

    ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR AND ELECTRONIC DEVICE

    公开(公告)号:EP3451400A1

    公开(公告)日:2019-03-06

    申请号:EP18168063.8

    申请日:2018-04-18

    IPC分类号: H01L51/42

    摘要: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes at least one first photoelectric conversion material having a peak absorption wavelength (λ max1 ) of less than about 540 nm and a at least one second photoelectric conversion material having a peak absorption wavelength (λ max2 ) of greater than or equal to about 540 nm, and an image sensor, and an electronic device.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    9.
    发明公开
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开
    图像传感器和包括相同的电子设备

    公开(公告)号:EP3174276A1

    公开(公告)日:2017-05-31

    申请号:EP16199020.5

    申请日:2016-11-16

    IPC分类号: H04N1/00

    摘要: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on the photoelectric conversion device and configured to selectively transmit a mixed light including a third color and at least one of the first color and the second color, and an electronic device including the image sensor is provided.

    摘要翻译: 一种图像传感器,包括:半导体基板,包括多个光敏器件;光电转换器件,设置在半导体基板上并吸收第一颜色和第二颜色的混合光;以及设置在光电转换器件上的滤色器,以及 被配置为选择性地发送包括第三颜色以及第一颜色和第二颜色中的至少一种颜色的混合光,以及包括该图像传感器的电子设备。

    ORGANIC LIGHT EMITTING DIODE PANELS AND DISPLAY DEVICES INCLUDING THE SAME

    公开(公告)号:EP3624194A1

    公开(公告)日:2020-03-18

    申请号:EP19164413.7

    申请日:2019-03-21

    IPC分类号: H01L27/32

    摘要: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.