公开(公告)号：EP3689884A1

公开(公告)日：2020-08-05

申请号：EP18862289.8

申请日：2018-09-28

申请人： Sabic Sk Nexlene Company Pte. Ltd.

发明人： SHIN, Dong-cheol ,  OH, Yeonock

IPC分类号： C07F7/28 ,  C07F7/10 ,  C08F4/6592 ,  C08F4/659 ,  C08F10/02 ,  C08F210/16 ,  C08F2/38 ,  C08F4/646 ,  C08F36/20

摘要： Provided are a novel indene-based transition metal complex, a transition metal catalyst composition including the same having high catalyst activity for preparing an ethylene homopolymer or copolymers of ethylene and one or more α-olefins, a method for preparing an ethylene homopolymer or copolymers of ethylene and α-olefins using the same, and the thus-prepared ethylene homopolymer or copolymers of ethylene and α-olefins.

公开(公告)号：EP3686157A1

公开(公告)日：2020-07-29

申请号：EP20162661.1

申请日：2013-06-03

申请人： Versum Materials US, LLC

发明人： XIAO, Manchao ,  LEI, Xinjian ,  SPENCE, Daniel P. ,  CHANDRA, Haripin ,  HAN, Bing ,  O'NEILL, Mark Leonard ,  MAYORGA, Steven Gerard ,  MALLIKARJUNAN, Anupama

IPC分类号： C01B33/04 ,  C07F7/10 ,  C23C16/00 ,  C07F7/02 ,  C07F7/21

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：EP3680245A1

公开(公告)日：2020-07-15

申请号：EP19769976.2

申请日：2019-04-24

申请人： Hansol Chemical Co., Ltd

发明人： The designation of the inventor has not yet been filed

IPC分类号： C07F7/10 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  C07F7/08

摘要： The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.

公开(公告)号：EP3227306B1

公开(公告)日：2020-07-15

申请号：EP15865871.6

申请日：2015-11-30

申请人： Merck Sharp & Dohme Corp.

发明人： LIU, Zhijian ,  YASUDA, Nobuyoshi ,  YANG, Lu ,  KLAPARS, Artis ,  CAMPOS, Kevin R. ,  REIBARKH, Mikhail

IPC分类号： C07F7/10 ,  C07F7/18 ,  C07D471/08

公开(公告)号：EP3392255B1

公开(公告)日：2020-06-03

申请号：EP18166048.1

申请日：2018-04-06

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： TONOMURA, Yoichi ,  KUBOTA, Tohru

IPC分类号： C07F7/10

公开(公告)号：EP3594219A1

公开(公告)日：2020-01-15

申请号：EP19194650.8

申请日：2014-09-22

申请人： Versum Materials US, LLC

发明人： O'Neill, Mark Leonard ,  XIAO, Manchao ,  LEI, Xinjian ,  HO, Richard ,  CHANDRA, Haripin ,  MACDONALD, Matthew R. ,  WANG, Meiliang

IPC分类号： C07F7/10 ,  C23C16/24 ,  C23C16/455 ,  H01L21/02

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae B and C below:

In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350°C or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

公开(公告)号：EP3594217A1

公开(公告)日：2020-01-15

申请号：EP17899805.0

申请日：2017-11-16

申请人： JNC Corporation

发明人： TANAKA Toru

IPC分类号： C07F7/10

摘要： Provided is a method for safely and efficiently producing a high-purity dialkylaminosilane. In the method, chlorosilane is fed in the presence of a metal and a dialkylamine is simultaneously fed and reacted therewith. For example, chlorosilane and a portion of a dialkylamine are fed and thereafter another portion of the dialkylamine only is fed and reacted, thereby producing a dialkylaminosilane.

公开(公告)号：EP3562781A1

公开(公告)日：2019-11-06

申请号：EP17822097.6

申请日：2017-11-29

申请人： Dow Silicones Corporation

发明人： REKKEN, Brian D. ,  TELGENHOFF, Michael D.

IPC分类号： C01B33/107 ,  C01B21/068 ,  C07F7/10

摘要： A method for making chlorinated silazanes. The method comprises contacting: (a) a disilazane; (b) a chlorosilane; and (c) a catalyst which is a zinc salt of: (i) a sulfonic acid or (ii) a sulfonic acid imide.

公开(公告)号：EP2818474B1

公开(公告)日：2019-10-16

申请号：EP14174252.8

申请日：2014-06-26

申请人： Versum Materials US, LLC

发明人： Xiao, Manchao ,  Lei, Xinjian ,  Spence, Daniel P.

IPC分类号： C07F7/10 ,  C01B33/04 ,  C23C16/00

公开(公告)号：EP3310791B1

公开(公告)日：2019-10-09

申请号：EP16732419.3

申请日：2016-06-09

申请人： Gelest Technologies Inc.

发明人： ARKLES, Barry, C. ,  PAN, Youlin ,  JOVE, Fernando

IPC分类号： C07F7/08 ,  C07F7/10 ,  C08C19/25 ,  C23C16/34 ,  H01L21/02 ,  C01B21/068 ,  C01B21/082