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    HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS
    7.
    发明公开
    HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS 审中-公开
    含硅薄膜的高温原子层沉积

    公开(公告)号：EP3196336A1

    公开(公告)日：2017-07-26

    申请号：EP17152346.7

    申请日：2017-01-20

    申请人： Versum Materials US, LLC

    发明人： WANG, Meiliang ,  LEI, Xinjian ,  Mallikarjunan, Anupama ,  Chandra, Haripin ,  Han, Bing

    IPC分类号： C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/0228

    摘要： A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 650°C or greater is provided. In one aspect, there is provided a method to deposit a silicon oxide film or material comprising the steps of: providing a substrate in a reactor; introducing into the reactor at least one halidosiloxane precursor selected from the group of compounds having formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen source into the reactor; and purging reactor with purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited and the process is conducted at one or more temperatures ranging from about 650 to 1000°C.

    摘要翻译： 提供了用于在原子层沉积工艺中以650℃或更高的一个或多个温度沉积氧化硅膜的方法和组合物。 一方面，提供了一种沉积氧化硅膜或材料的方法，包括以下步骤：在反应器中提供衬底; 向反应器中引入至少一种选自本文所述的具有式I和II的化合物组的卤代硅氧烷前体; 用吹扫气体吹扫反应器; 将氧源引入反应器; 并用吹扫气体吹扫反应器; 并且其中重复所述步骤直到沉积期望厚度的氧化硅，并且所述过程在约650至1000℃的一个或多个温度下进行。

    STABLE ALKENYL OR ALKYNYL-CONTAINING ORGANOSILICON PRECURSOR COMPOSITIONS
    8.
    发明公开
    STABLE ALKENYL OR ALKYNYL-CONTAINING ORGANOSILICON PRECURSOR COMPOSITIONS 审中-公开

    公开(公告)号：EP4434993A3

    公开(公告)日：2024-11-06

    申请号：EP24193717.6

    申请日：2019-08-22

    申请人： Versum Materials US, LLC

    发明人： RIDGEWAY, Robert, G. ,  VRTIS, Raymond, N. ,  LEI, Xinjian ,  RAO, Madhukar, B. ,  MAYORGA, Steve, Gerard ,  OSTERWALDER, Neil ,  XIAO, Manchao ,  WANG, Meiliang

    IPC分类号： C07F7/20 ,  C07F7/08

    摘要： A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula R n SiR 1 4-n wherein R is selected a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; R 1 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, and a C 3 to C 10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.