摘要:
A connector for making connections to the post of an automotive lead-acid battery is disclosed. The connector includes a body portion having a pair of bifurcated ring portions each defining a circular opening therethrough, and a locking ring portion, also defining a circular opening therethrough with a pair of lugs affixed to the locking ring. The circular openings of each are designed to slip over and surround the battery post and when the locking ring is turned by means of the tugs, the lugs come into contact with the ring portions of the body causing the three rings to cut into the battery post around its total circumference by cam action and to lock in position by friction.
摘要:
An image suppression mixed of the waveguide type is disclosed which comprises a waveguide signal input terminal at one end of a waveguide, a local oscillation inputterminal at the other end of the waveguide, a mixer diode inserted within the waveguide and an IF signal output terminal connected to the mixer diode. At leastthe width of the waveguide on the side of the waveguide signal inputterminal is selected to be a cutoff dimension for the image frequencies f m and the local oscillation frequency f 1 the waveguide signal frequencies f s , the local oscillation frequency f 1 and the image frequencies f m are correlated as f m 1 s
摘要:
A latch and detent mechanism for use with a sliding tray 12 mounted in a cabinet 10 is disclosed. The mechanism includes a stationary detent bar 18 having one or more detent slots 22, a latch bar 20 that is pivotably coupled to the sliding tray with a finger 46 at one end for engaging a detent slot to lock the tray in position and a handle 14 at the other end for disengaging the finger to unlock the tray, and biasing means 54 for urging the finger toward the detent slot.
摘要:
@ A composite film is provided which has a first layer of WSi x , where x is greater than 2, over which is disposed a second layer of a tungsten complex consisting substantially of tungsten with a small amount of silicon therein, typically less than 5%. Both layers are deposited in situ in a cold wall chemical vapor deposition chamber at a substrate temperature of between 500 and 550°C. Before initiating the deposition process for these first and second layers, the substrate onto which they are to be deposited is first plasma etched with NF 3 as the reactant gas, then with H 2 as the reactant gas, both steps being performed at approximately 100 to 200 volts self-bias. WSi x is then deposited onto the surface of the substrate using a gas flow rate for silane which is 20 to 80 times the flow rate of tungsten silicide, followed by deposition of a tungsten complex as the second layer, using a gas flow rate for tungsten hexaflouride which is 1 to 3 times the flow rate of silane, and a gas flow rate of hydrogen which is about 10 times the flow rate of silane. Similarly, in another embodiment, the tungsten complex without the silicide layer is deposited directly onto a silicon surface using the same process as for the tungsten complex in the second layer of the first embodiment.
摘要:
A remote control transmitter comprising a first switch group on one side of the transmitter and a second switch group on the same side as or the other side of the first switch group. The first switch group includes a plurality of key tops exposed on the surface of the transmitter and the second switch group is covered with a flexible sheet.
摘要:
A semiconductor memory device comprises a plurality of row decoder circuits connected with word lines for selecting memory cells. The row decoder circuits include normal row decoder circuits and spare row decoder circuits which can be selected in place of a normal row decoder circuit in case where a fault occurs in a memory cell selected by a word line connected to the normal row decoder circuit. An RAS signal (precharge signal) is applied to an output line (12) of a normal row decoder circuit through a precharge bus (31). A link element (11 p) is inserted in the precharge bus (31). The link element (11p) is an element which can be melted by a laser beam, whereby the normal row decoder circuit associated is maintained in a non-selective state. A clamp circuit (14) is also connected to the output line (12). The clamp circuit (14) is a circuit for maintaining the output line (12) at a prescribed low level when the link element (11p) is melted and the associated decoder circuit is brought into a non-selective state.
摘要:
A host processor (1 A) stores a preset delay time data (T), corresponding to the time taken from the initiation of a delivery operation for liquid to start being delivered from a delivery nozzle (28). During delivery,the amount of liquid delivered is measured by a sub-processor (1B) using flow-rate pulses. When a delivery nozzle (28) is activated, it sends a signal to the sub-processor (1 B). The sub-processor then obtains the preset delay time data (T) from the host processor and does not count flow-rate pulses during the delay time. This improves the sub-processor's measurement of the liquid delivery, since it avoids incorrectly treating delivery as occurring before liquid has reached the nozzle.
摘要:
A container of a food or beverage product, characterised in that it is constructed from a tubular wall portion open at both ends, the dimensions of the open ends being substantially the same as the transverse dimensions of the remainder of the tubular wall portion, that the tubular wall portion is of biaxially oriented thermoplastics material and is transparent, that the container further comprises end closures (30, 31) formed separately from the tubular wall portion but sealingly secured thereto to close its ends, and that a food or beverage product is hermetically sealed within the container and displayed through the tubular wall portion.
摘要:
A CCD image sensor includes a plurality of PN junction photodiodes (3) aligned in a matrix fashion, and a plurality of CCD vertical shift registers of which each register element is associated with one of said plurality of PN junction photodiodes (3). A transfer gate (50) is formed between the corresponding pair of CCD shift register element and the PN junction photodiode. The CCD image sensor does not have channel stoppers between the PN junction photodiodes (3). Register electrodes are made of upper register electrodes (8, 10) and lower register electrodes (7, 9) which are extended to portions provided between the adjacent two PN junction photodiodes (3). The upper register electrodes (8, 10) overlap the lower register electrodes (7, 9) at desired portions to achieve the shift operation in the CCD vertical shift registers. By properly controlling the clock pulses applied to the upper and lower register electrodes (7, 8, 9, 10), electrical isolation is achieved between adjacent two PN junction photodiodes (3). At a timing when the charges stored in the PN junction photodiodes (3) are transferred to the CCD vertical shift register, the clock pulse applied to the lower register electrodes (7,9) bears three levels V L , V, and V H .
摘要:
A word processing circuit comprises a memory for storing the spelling of a plurality of basic words except those of compounds, an address counter for selecting an address for the memory, an input device for inputting a specific word, a register responsive to the input device for registering the specific word, a spelling checking circuit reponsive to the register and the memory for checking whether the spelling of the specific word is stored in the memory, and a control circuit responsive to the spelling checking circuit for controlling the operation of the register and the address counter.