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    SEMICONDUCTOR IMAGING DEVICE
    1.
    发明授权
    SEMICONDUCTOR IMAGING DEVICE 有权

    公开(公告)号：EP2665097B1

    公开(公告)日：2018-05-30

    申请号：EP11855455.9

    申请日：2011-11-11

    申请人： Hamamatsu Photonics K.K.

    发明人： IKEYA, Tomohiro ,  YONETA, Yasuhito ,  SUZUKI, Hisanori ,  MURAMATSU, Masaharu

    IPC分类号： H01L27/148 ,  H04N5/372

    CPC分类号： H01L27/14806 ,  H01L27/14601 ,  H01L27/14825 ,  H01L27/14831 ,  H04N5/37213

    摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.

    IMAGING CELL ARRAY INTEGRATED CIRCUIT
    2.
    发明公开
    IMAGING CELL ARRAY INTEGRATED CIRCUIT 审中-公开
    在成像单元阵列集成电路

    公开(公告)号：EP3044811A1

    公开(公告)日：2016-07-20

    申请号：EP14843596.9

    申请日：2014-09-04

    申请人： Opel Solar, Inc. ,  The University of Connecticut

    发明人： TAYLOR, Geoff, W.

    IPC分类号： H01L27/14 ,  H01S5/30 ,  H01S5/34

    CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    IMAGE SENSOR PIXEL CELL WITH NON-DESTRUCTIVE READOUT
    3.
    发明公开
    IMAGE SENSOR PIXEL CELL WITH NON-DESTRUCTIVE READOUT 有权
    BILDSENSORPIXELZELLE MIT ZERSTENSRONGSFREIEM AUSLESEN

    公开(公告)号：EP3001458A1

    公开(公告)日：2016-03-30

    申请号：EP15187189.4

    申请日：2015-09-28

    申请人： OmniVision Technologies, Inc.

    发明人： SOLHUSVIK, Johannes ,  MASSETTI, Dominic

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14831 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/2351 ,  H04N5/353 ,  H04N5/3535 ,  H04N5/3745 ,  H04N5/37452

    摘要： A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.

    摘要翻译： 像素单元包括响应于入射光而耦合到光生成图像电荷的光电二极管。 深沟槽隔离结构靠近光电二极管设置，以通过深沟槽隔离结构提供与光电二极管的电容耦合。 放大器晶体管耦合到深沟槽隔离结构，以响应于通过由深沟槽隔离结构提供的电容耦合从光电二极管读出的图像电荷来产生放大的图像数据。 行选择晶体管耦合到放大器晶体管的输出，以选择性地将放大的图像数据输出到耦合到行选择晶体管的列位线。

    SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE
    5.
    发明公开
    SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE 有权
    FESTKÖRPERBILDAUFNAHMEVORRICHTUNG的HALBLEITERELEMENT

    公开(公告)号：EP2881991A1

    公开(公告)日：2015-06-10

    申请号：EP13825343.0

    申请日：2013-08-01

    申请人： National University Corporation Shizuoka University

    发明人： KAWAHITO, Shoji

    IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

    CPC分类号： H01L29/76833 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14843 ,  H01L27/1485 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

    摘要： A semiconductor element encompasses a charge-transfer path defined in a semiconductor region (34.35), configured to transfer signal charges, (b) a pair of first field-control electrodes (42a, 42b) laminated via an insulating film on the semiconductor region so as to sandwich the charge-transfer path in between, and a pair of second field-control electrodes (43a, 43b) arranged separately from and adjacently to the first field-control electrodes (42a, 42b). By applying field-control voltages differing from each other, to the first and second field-control electrodes (43a, 43b), a depleted potential in the charge-transfer path is changed, and a movement of the signal charges transferring in the semiconductor region is controlled. Because electric field can be made constant over a long distance along the charge-transfer direction, a semiconductor element and a solid-state imaging device, in which problems caused by interface defects and the like are avoided, can be provided.

    摘要翻译： 半导体元件包括限定在半导体区域（34.35）中的电荷传输路径，被配置为传送信号电荷，（b）经由绝缘膜层叠在半导体区域上的一对第一场控制电极（42a，42b），从而 将电荷转移路径夹在中间，以及与第一场控制电极（42a，42b）分开并相邻配置的一对第二场控制电极（43a，43b）。 通过施加彼此不同的场控制电压到第一和第二场控制电极（43a，43b），电荷传输路径中的耗尽电位改变，并且在半导体区域中传输的信号电荷的移动 被控制。 由于电场沿着电荷传输方向可以在长距离上保持恒定，所以可以提供避免由界面缺陷等引起的问题的半导体元件和固体摄像器件。

    SOLID STATE IMAGING DEVICE
    6.
    发明公开
    SOLID STATE IMAGING DEVICE 有权
    FESTKÖRPERABBILDUNGSVORRICHTUNG

    公开(公告)号：EP2665097A4

    公开(公告)日：2014-07-30

    申请号：EP11855455

    申请日：2011-11-11

    申请人： HAMAMATSU PHOTONICS KK

    发明人： IKEYA TOMOHIRO ,  YONETA YASUHITO ,  SUZUKI HISANORI ,  MURAMATSU MASAHARU

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14806 ,  H01L27/14601 ,  H01L27/14825 ,  H01L27/14831 ,  H04N5/37213

    摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.

    摘要翻译： 固态成像装置1设置有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状 是大致矩形的形状。 感光区域7在与长边相交的第一方向上并列。 电位梯度形成部分3形成从感光区域7的短边中的一个短边到第二个方向沿第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和 具有第一电阻率，第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。

    CCD
    9.
    发明公开
    CCD 有权

    公开(公告)号：EP2453479A3

    公开(公告)日：2014-01-01

    申请号：EP11250888.2

    申请日：2011-11-09

    申请人： E2V Technologies (UK) Limited

    发明人： Hadfield, Kevin Anthony Derek

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14831 ,  H01L27/1464 ,  H01L27/1485

    摘要： A CCD comprises a two dimensional array of charge collection sites arranged in rows and columns, each row being associated with a plurality of electrodes such as polysilicon electrodes R1/, R1/2, R1/3 extending in the direction of the row, each electrode corresponding to a respective voltage phase IΦ1 to IΦ3. The resistivity of the polysilicon electrodes causes a time constant problem for the phase voltages when they appear at the central regions of the electrodes and, for this reason, it has been proposed to run a conducting strip along each polysilicon electrode to reduce its resistance (in a back-illuminated device, the strips would not obscure the incoming radiation). However, it is difficult to fabricate fine metal features, and this then places a restriction on how closely the rows can be spaced. According to the invention, conducting strips are provided which have repeatedly reversing portions inclined relative to the rows and in electrical contact with the electrodes of a corresponding voltage phase of several rows. Preferably, the conducting strips are zig-zag in shape to make multiple connections to each electrode to which it supplies the respective phase voltage.

    摘要翻译： CCD包括按行和列排列的电荷收集位置的二维阵列，每行与多个电极相关联，诸如沿行方向延伸的多晶硅电极R1 /，R1 / 2，R1 / 3，每个电极 对应于相应的电压相位IΦ1至IΦ3。 当多晶硅电极的电阻率出现在电极的中心区域时，它们的相对电压的电阻率会产生时间常数问题，并且由于这个原因，已经提出沿着每个多晶硅电极运行导电带以降低其电阻（在 背照式装置，条带不会遮挡入射辐射）。 然而，制造精细的金属特征是困难的，这就限制了这些行可以间隔多少。 根据本发明，提供了导电条，其具有相对于行倾斜的反复部分并且与具有数行的相应电压相位的电极电接触。 优选地，导电条的形状为之字形以与其提供相应相电压的每个电极形成多个连接。