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    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    34.
    发明授权
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权
    用于生产有机场效应晶体管

    公开(公告)号：EP2022105B1

    公开(公告)日：2011-08-10

    申请号：EP07728760.5

    申请日：2007-05-03

    Applicant: BASF SE ,  The Board of Trustees of The Leland Stanford Junior University

    Inventor： KÖNEMANN, Martin ,  ERK, Peter ,  LING, Mang-Mang ,  BAO, Zhenan

    IPC: H01L51/05 ,  H01L51/30

    CPC classification number: H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    Abstract: A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula (I) wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

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