公开(公告)号：EP4279561A1

公开(公告)日：2023-11-22

申请号：EP22739420.2

申请日：2022-01-12

申请人： Fujimi Incorporated

发明人： TANABE, Yoshiyuki ,  TANIGUCHI, Megumi ,  TSUCHIYA, Kohsuke

IPC分类号： C09K3/14 ,  H01L21/304

摘要： Provided is a polishing composition that can achieve the suppression of reduction in the polishing removal rate and the reduction in the amount of edge roll-off after polishing, both at high levels. A polishing composition to be used for stock polishing of a silicon wafer is provided. The polishing composition consists of an abrasive, a basic compound, a surfactant, a chelating agent, and water, wherein the surfactant contains a surfactant I having a repeating structure of oxyalkylene units.

公开(公告)号：EP4119292A1

公开(公告)日：2023-01-18

申请号：EP21767349.0

申请日：2021-03-01

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke

IPC分类号： B24B37/00 ,  H01L21/304

摘要： Provided is a polishing composition that can achieve wettability enhancement and haze reduction of a polished surface of a silicon wafer. The polishing composition for a silicon wafer contains an abrasive, a cellulose derivative, a surfactant, a basic compound, and water. Here, the cellulose derivative has a weight average molecular weight of more than 120 × 10 4 , and the surfactant has a molecular weight of less than 4000.

公开(公告)号：EP4039760A1

公开(公告)日：2022-08-10

申请号：EP20872317.1

申请日：2020-09-24

申请人： Fujimi Incorporated

发明人： TANIGUCHI, Megumi ,  TSUCHIYA, Kohsuke

IPC分类号： C09G1/02 ,  C09K3/14 ,  B24B37/00 ,  H01L21/304

摘要： Provided is a polishing composition that can achieve both high polishing removal rate and excellent bump cancellation ability at the periphery of HLM. The polishing composition contains an abrasive, a basic compound, a pH buffering agent, and water, wherein the pH buffering agent contains a salt S L having at least one of acid dissociation constant (pKa) values in a range of 9 to 11 and a salt S H having at least one of pKa values of 12 or more.

公开(公告)号：EP3950877A1

公开(公告)日：2022-02-09

申请号：EP20779911.5

申请日：2020-01-30

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke ,  ASADA, Maki ,  MOMOTA, Satoshi

IPC分类号： C09K3/14 ,  B24B37/00 ,  H01L21/304

摘要： The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step P f . In this polishing method, the final polishing step P f has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step P ff of polishing using a polishing composition S ff , a polishing sub-step provided before the polishing sub-step P ff in the plurality of polishing sub-steps is a polishing sub-step P fp of polishing using a polishing composition S fp , and the polishing composition S ff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition S ff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition S fp obtained in the standard test 1, and condition (B): the polishing composition S ff contains an abrasive A ff , a basic compound B ff , and hydroxyethyl cellulose.

公开(公告)号：EP3584823A1

公开(公告)日：2019-12-25

申请号：EP18754373.1

申请日：2018-02-06

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke ,  ASADA, Maki ,  MOMOTA, Satoshi

IPC分类号： H01L21/304 ,  B24B37/00 ,  C09K3/14

摘要： Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A 1 , a basic compound B 1 , and a surface protective agent S 1 . The surface protective agent S 1 includes a water-soluble polymer P 1 having a weight average molecular weight of higher than 30 × 10 4 and a dispersant D 1 , and has a dispersibility parameter α 1 of less than 80%.

公开(公告)号：EP3133639B1

公开(公告)日：2019-06-26

申请号：EP15780524.3

申请日：2015-04-07

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  MORI, Yoshio

IPC分类号： H01L21/304 ,  B24B37/00 ,  C09K3/14 ,  H01L21/321

公开(公告)号：EP3053977A1

公开(公告)日：2016-08-10

申请号：EP14846825.9

申请日：2014-09-22

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke ,  MORI, Yoshio

IPC分类号： C09K3/14 ,  B24B37/00 ,  H01L21/304

CPC分类号： C09K3/1463 ,  B24B37/00 ,  B24B37/044 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1436 ,  H01L21/02024 ,  H01L21/02052

摘要： Provided is a polishing composition with which surface defects can be efficiently reduced. This invention provides a polishing composition comprising a water-soluble polymer M C-end . The main chain of the water-soluble polymer M C-end is formed with a non-cationic region as its main structural part and a cationic region located at least at one end of the main chain. The cationic region has at least one cationic group.

公开(公告)号：EP3007213A1

公开(公告)日：2016-04-13

申请号：EP14807048.5

申请日：2014-05-02

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  ICHITSUBO, Taiki ,  MORI, Yoshio

IPC分类号： H01L21/304 ,  B24B37/00 ,  C09K3/14

摘要： This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

摘要翻译： 本发明提供了在磨料存在下使用的硅晶片抛光组合物。 该组合物包括硅晶片抛光促进剂，含酰胺基的聚合物和水。 含酰胺基的聚合物在其主链中具有建筑单元A. 构成单元A包含构成含酰胺基聚合物的主链的主链碳原子和仲酰胺基或叔酰胺基。 构成仲酰胺基或叔酰胺基的羰基碳原子与主链碳原子直接键合。

公开(公告)号：EP2957613A1

公开(公告)日：2015-12-23

申请号：EP14751996.1

申请日：2014-02-10

申请人： Fujimi Incorporated

发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  ASADA, Maki ,  SUGA, Yusuke

IPC分类号： C09K3/14 ,  B24B37/00 ,  C09G1/02

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/02052

摘要： The present invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The polishing composition has a volume average particle diameter D A of grains in the polishing composition of 20 nm to 60 nm measured by dynamic light scattering at a concentration equivalent to 0.2 % abrasive content by mass.

摘要翻译： 本发明提供了一种抛光组合物，包括研磨，水溶性聚合物和水组成。 所述抛光组合物具有在浓度相当于0.2质量％的磨料含量为通过动态光散射测量的20nm至60nm的抛光组合物颗粒的体积平均粒径D A。